Progress in the Low Temperature Oxidation of MoSi2

Journal of Inorganic Materials

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Progress in the Low Temperature Oxidation of MoSi₂

WANG Gang; ZHAO Shi-Ke; JIANG Wan

State Key Lab of High Performance Ceramics and Superfine Microstructure; Chinese Academy of Sciences; Shanghai 200050; China

Received:2000-11-24 Revised:2001-01-10 Published:2001-11-20 Online:2001-11-20

Abstract

Abstract: The low temperature oxidation of MoSi₂ was reviewed. The simultaneous oxidation of Mo and Si occurs at low temperature (<1000℃) with the
formation of MoO₃ and SiO₂, and this nonselective oxidation often leads to structural disintegration of MoSi₂ (Pesting). Several models of the pesting
reaction were summarized as follows:(1) Grain boundary hardening mechanism; (2) Pore-and-crack oxidation mechanism; (3) Grain boundary diffusion and oxidation
mechanism. On these bases, some methods that prevent the occurrence of Pesting were proposed and elucidated, and some proposals for the low temperature
oxidation research of MoSi₂ were suggested.

Key words: molybdenum disilicide, low temperature oxidation, Pesting

CLC Number:

TQ174

WANG Gang,ZHAO Shi-Ke,JIANG Wan. Progress in the Low Temperature Oxidation of MoSi₂[J]. Journal of Inorganic Materials.

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Progress in the Low Temperature Oxidation of MoSi₂

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