Abstract: The crystallization behavior of sputtered Ge₂Sb₂Te₅ films initialized by initializer unit was studied by using XRD. It is indicated that only the amorphous phase to FCC phase transformation occurs during laser annealing of the normal phase-change structure, which is benefit for raising the phase-change optical disc s signal-to-noise ratio. The phase transformation from FCC to HCP doesn t occur, which occurs during the heat-induced phase-change process. The initialization power and velocity affect the Ge₂Sb₂Te₅ file's crystallization fraction.

Key words: Ge₂Sb₂Te₅, laser-induced phase-change, XRD, FCC