Preparation and Characterization of Room Temperature NO2 Sensitive Y2O3-SnO2 Sol-Gel Thin Films

Journal of Inorganic Materials

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Preparation and Characterization of Room Temperature NO₂Sensitive Y₂O₃-SnO₂ Sol-Gel Thin Films

FANG Guo-Jia^1,2,3; LIU Zu-Li¹; JI Xiang-Dong¹; WANG Han-Zhong³; HUANG Yi-Jun³; YAO Kai-Lun ^1,2

1. National Lab of Laser Technology; Huazhong Unlv. of Science & Technology; Wuhan 430074; China; 2. Department of Physics; Huazhong Univ. of Science & Technology, Wuhan 430074, China; 3. Information and Functional Materials Research Group, Xiaofan University, Xiangfan 441053, China

Received:2000-02-16 Revised:2000-03-29 Published:2001-01-20 Online:2001-01-20

Abstract

Abstract: Pure and Y₂O₃ doped SnO2 gas sensitive thin films were prepared by the sol-gel technique by using non-alkoxide SnCl₂·2H₂O ) Y(NO₃)₃·6H₂O as precursors. The thermal decomposition and crystallization process of 1mol%Y₂O₃-SnO₂ thin films and the effect of doping amount on the electrical and gas sensitive properties of SnO₂ thin films were studied. The Y₂O₃-SnO₂ film shows novel gas sensing properties (good sensitivity, high selectivity and quick response behavior) toward low concentration of NO₂ at room temperature.

Key words: Y₂O₃ doped SnO₂ thin films, electrical and gas sensitive properties, sol-gel technique

CLC Number:

TN304

FANG Guo-Jia,LIU Zu-Li,JI Xiang-Dong,WANG Han-Zhong,HUANG Yi-Jun,YAO Kai-Lun. Preparation and Characterization of Room Temperature NO₂Sensitive Y₂O₃-SnO₂ Sol-Gel Thin Films[J]. Journal of Inorganic Materials.

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Preparation and Characterization of Room Temperature NO₂Sensitive Y₂O₃-SnO₂ Sol-Gel Thin Films

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