Abstract: The aluminium oxide films were deposited on Si(100) substrate by plasma source enhanced magnetron sputtering by using an electron cyclotron resonance (ECR) microwave plasma source and a direct current magnetron sputtering target. X-ray photoelectron spectroscopy (XPS) and glancing angle X-ray diffraction patterns show that the metastable stoichiometric γ-Al₂O₃ films can be obtained at a higher deposition temperature of 600℃. The refractive index of the films is 1.7, corresponding with that of stable α-Al₂O₃.

Key words: aluminium oxide film, plasma source, magnetron sputtering, refractive index