Lower Gas Pressure Enhanced Diamond Nucleation on Alumina by Microwave Plasma Chemical Vapor Deposition

Abstract

Abstract: Under lower gas pressure, the high-density nucleation of diamond films on alumina was successfully achieved by microwave plasma-enhanced chemical vapor deposition (MPCVD). It was found that the nucleation density increased with the decreases of gas pressure. Based on these results, a kinetic model for diamond nucleation in MPCVD system was proposed. The critical gas pressure corresponding to the highest nucleation density was also discussed.

Key words: diamond film, MPCVD, alumina substrates, gas pressure, nucleation

CLC Number:

TN304

WANG Zhi-Ming,XIA Yi-Ben,YANG Ying,FANG Zhi-Jun,WANG Lin-Jun,JU Jian-Hua,FAN Yi-Min,ZHANG Wei-Li. Lower Gas Pressure Enhanced Diamond Nucleation on Alumina by Microwave Plasma Chemical Vapor Deposition[J]. Journal of Inorganic Materials.

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Lower Gas Pressure Enhanced Diamond Nucleation on Alumina by Microwave Plasma Chemical Vapor Deposition

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