Changes of Properties and Structure in Amorphous GeS2 Films by Laser Illumination

Abstract

Abstract: The changes of properties and structure in GeS₂ amorphous semiconductor films by light illumination from Ar ion laser were studied with the XRD, IR, SEM and
transmission spectra analysises. Photoinduced crystallization was also observed in the exposed films. The results show that the optical absorption edges of the
films shift to shorter wavelength according to annealing and light illumination. The magnitude of shift increases with the increase of the intensity of illumination
light and the illumination time, and the shift in annealed films is reversible.

Key words: amorphous GeS₂ film, ar ion laser illumination, photoinduced change

CLC Number:

TB43

LIU Qi-Ming,GAN Fu-Xi,GU Dong-Hong. Changes of Properties and Structure in Amorphous GeS₂ Films by Laser Illumination[J]. Journal of Inorganic Materials.

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Changes of Properties and Structure in Amorphous GeS₂ Films by Laser Illumination

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