Growth of Large 6H-SiC Single Crystals

Abstract

Abstract: The growth process of large SiC single crystals by PVT method was reported. The influences of growth
temperature, temperature gradient, the pressure in the growth chamber and impurity on the crystal growth and its quality were investigated. The large
6H-SiC single crystal with diameter of 45mm was successfully grown under optimum process conditions. The densities of micropipe and dislocation
were ca. 10³cm^-2 and 10⁴～10⁵cm^-2 respectively observed through chemical etching technique. The crystal was n-type semiconductor,
the carrier concentration and electron mobility were 10¹⁴cm^-3 and 90cm²V^-1S^-1 respectively.

Key words: silicon carbide single crystal, crystal growth, PVT method, micropipe

CLC Number:

O782

CHEN Zhi-Zhan,XIAO Bing,SHI Er-Wei,ZHUANG Ji-Yong,LIU Xian-Cai. Growth of Large 6H-SiC Single Crystals[J]. Journal of Inorganic Materials.

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Growth of Large 6H-SiC Single Crystals

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