Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Optical Properties of a-GaN Film Deposited by DC Magnetron Sputtering

PAN Xiao-Jun, ZHANG Zhen-Xing, JIA Lu, LI Hui, XIE Er-Qing   

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • Received:2006-07-12 Revised:2006-09-12 Published:2007-07-20 Online:2007-07-20

Abstract: GaN thin films were prepared by direct current (DC) planar magnetron sputtering on Si and SiO$_2$. The films were characterized by X-ray diffraction (XRD), Raman, Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence (PL) and UV-Vis spectra. XRD and Raman spectrum show that the films are amorphous. Fourier infrared absorbance spectrum shows
that the main absorbance is Ga-N stretching vibration. 360nm ultraviolet emission is obtained at room temperature. UV-Vis result shows that the optical band gap of the films is 3.74eV, which is consistent with photoluminescence spectrum result.
\vspace*{.2cm

Key words: amorphous GaN, DC sputtering, optical properties

CLC Number: