Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-SiC Thin Films by MBE on Si(111) Substrate

doi:10.3724/SP.J.1077.2007.00720

Abstract

Abstract: Single crystalline 3C-SiC thin films were grown on Si(111) at different substrate temperatures by solid source molecular beam epitaxy (SSMBE). Their structure, morphology and chemical component and the influence of the substrate temperature were investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atom force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the sample grown at substrate temperature of 1000℃ exhibits the best crystalline quality. For higher substrate temperature, there will be more huge voids on sample surfaces, and the large mismatch of thermal expansion coefficient between SiC and Si can cause more dislocation when samples are cooled down to room temperature from high substrate temperature. For lower substrate temperature, the deviation from stoichiometry will occur, which is responsible for the deteriorations of crystalline quality.

Key words: SiC thin films, Si substrate, solid source molecular beam epitaxy, substrate temperature

CLC Number:

O484
TN304

LIU Jin-Feng,LIU Zhong-Liang,WU Yu-Yu,XU Peng-Shou,TANG Hong-Gao. Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-SiC Thin Films by MBE on Si(111) Substrate[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2007.00720.

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