[1] Koki A, Sasakura H. Jpn. J. Appl. Phys., 1970, 9 (5): 582. [2] Tatsuyama C, Ichmura S. Jpn. J. Appl. Phys., 1976, 15 (5): 843--847. [3] Yamazoe N. Sens. Actuators B, 1991, 5 (1-4): 7--19. [4] 龚树萍,刘欢,周东祥(GONG Shu-Ping, et al). 无机材料学报(Journal of Inorganic Materials), 2006, 21 (3): 521--526. [5] He Y S, Campbell J C, Murphy R C, et al. J. Mater. Res., 1993, 8 (12): 3131--3134. [6] Wang D Z, Wen S L, Chen J, et al. Phys. Rev. B, 1994, 49 (20): 14282-14285. [7] Wang W L, Liao K J. Thin Solid Films, 1991, 195 (1-2): 193--198. [8] Yu K N, Xiong Y H, Liu Y L, et al. Phys. Rev. B, 1997, 55 (4): 2666--2671. [9] Kim T W, Lee D U, Choo D C, et al. Appl. Phys., 2001, 90 (1): 175--180. [10] Kolmakov V, Zhang Y X, Cheng G S, et al. Adv. Mater., 2003, 15 (12): 997--1000. [11] Leite E R, Weber I T, Longo E, et al. Adv. Mater., 2000, 12 (12): 965--968. [12] Law M, Kind H, Messer B, et al. Angew.Chem. Int. Edn Engl., 2002, 41 (13): 2405--2408. [13] Pan Z W, Dai Z R, Wang Z L. Nanobelts of Semiconducting Oxides. Science, 2001, 291 (5510): 1947--1949. [14] Ma C, Ding Y, Moore D, et al, Am. Chem. Soc., 2004, 126 (3): 708--709. [15] Dai Z R, Gole J L, Stout L D, et al. Phys. Chem. B, 2002, 106 (6): 1274--1279. [16] Sun S H, Meng G W, Wang Y W, et al. Appl. Phys. A, 2003, 76 (2): 287--289. [17] WuX C, Song W H, Zhao B, et al. Chem. Phys. Lett., 2001, 349 (3): 210--214. [18] Peng H Y, Wang N, Zhou X T, et al. Chem. Phys. Lett., 2002, 359 (3): 241--245. [19] Gundiah G, Govindaraj A, Rao C N R. Chem. Phys. Lett., 2002, 351 (3): 189--194. [20] Yao B D, Chan Y C, Wang N. Appl. Phys. Lett., 2002, 81 (5): 757--759. [21] Yang P D, Lieber C M. Mater. Res., 1997, 12 (11): 2981--2996. [22] Hu J Q, Ma X L, Shang N G, et al. Phys. Chem. B, 2002, 106 (15): 3823--3826. [23] Greiner E S, Gutowski J A, Ellis W C. J. Appl. Phys., 1961, 32 (11): 2489--2490. [24] Wagner R S, Treuting. J. Appl. Phys., 1961, 32 (11): 2490--2491.
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