Recent Advances in Research on p-Type ZnO

Abstract

Abstract: ZnO is a novel material for II--VI semiconductor. Researches indicate that n-type ZnO films can be well prepared, this is due to the high self-compensating process
on doping derived from the intrinsic donor defects such as oxygen vacancy (V_O) and zinc interstitial (Zn_i atoms, so n-typed ZnO films are formed naturally
and p-type ZnO films are difficult to be prepared. How to realize p-type ZnO films through doping is the key step for application in the fields of ZnO-based opoelectrical
devices, in which great progresses have been made now. This paper summarized the recent advances in research on p-type ZnO.

Key words: zinc oxide thin film, p-type ZnO, property

CLC Number:

TN304
O475

YE Zhi-Zhen,ZHANG Yin-Zhu,XU Wei-Zhong,LU Jian-Guo. Recent Advances in Research on p-Type ZnO[J]. Journal of Inorganic Materials.

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