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无机材料学报

无机材料学报

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飞秒激光沉积β-FeSi2/Si半导体膜及光学性能研究

周幼华1,2, 陆培祥1, 杨光1, 杨义发1, 郑启光1   

  1. 1. 华中科技大学激光技术国家重点实验室, 武汉 430074; 2. 江汉大学物理与信息工程学院, 武汉 430056

  • 收稿日期:2006-06-20 修回日期:2006-09-06 出版日期:2007-05-20 网络出版日期:2007-05-20

β-FeSi2 thin film prepared by femtosecond laser ablation and its optical characteristic

ZHOU You-Hua1,2, LU Pei-Xian1, YANG Guang1, YANG Yi-Fa1, ZHENG Qi-Guang1
  

  1. 1. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074, China; 2. Physics & Information School of Jianghan University, Wuhan 430056, China
  • Received:2006-06-20 Revised:2006-09-06 Published:2007-05-20 Online:2007-05-20

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摘要：

采用飞秒脉冲激光沉积法在Si(100)和Si(111)单晶基片上制备了均匀的单相β-FeSi2薄膜; 用X射线衍射(XRD), 场扫描电镜(FESEM), 能谱仪(EDX), 傅立叶红外拉曼谱仪(FTRIS)研究了薄膜的结构、组分、表面形貌和光学性能. 观察到了β-FeSi2在Si单晶基片上的生长与晶面取向有关的证据, 并在室温(2℃)下观测到β-FeSi2薄膜的光致发光, 其发光波长为1.53μm; 在氩离子514nm激光的激发下, 在192.0和243.9cm-1等位置观察到β-FeSi2的拉曼散射峰.

关键词: β-FeSi2,飞秒, 脉冲激光沉积法(PLD), 光致发光

Abstract:

The even single phase β-FeSi2 thin films were prepared by femtosecond laser deposition on Si (100) and Si (111) wafers using a FeSi2 alloy target. X-ray diffraction, field scanning electron microscope (FSEM), energy dispersive X-ray microanalysis (EDX), Fourier-transform Raman infrared spectroscope (FTRIS) were used to characterize the structure, composition, and properties of β-FeSi2 films. The growth of β-FeSi2 depends on the orientation of Si substrates. The photoluminescence from the grown single phase β-FeSi2 thin film observed at room temperature (2℃) is at a wavelength of 1.53 μm. Raman peaks of β-FeSi2 observed by an Raman microscope with 514.5nm argon laser are at 192.9cm-1, 243.9cm-1 and other positions.

Key words: β-FeSi2, femtosecond laser, pulsed laser deposition (PLD), photoluminescence.

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