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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

添加Na+对ANT系统介电性能的影响

李玲霞; 郭炜; 吴霞宛; 王洪儒; 张志萍; 余昊明   

  1. 天津大学电子信息学院先进陶瓷与加工技术教育部重点实验室 天津 300072
  • 收稿日期:2003-11-13 修回日期:2003-12-29 出版日期:2004-07-20 网络出版日期:2004-07-20

Effect of Na+ on Dielectric Properties of ANT System

LI Ling-Xia; GUO Wei; WU Xia-Wan; WANG Hong-Ru; ZHANG Zhi-Ping; YU Hao-Ming   

  1. School of Electronic Information and Engineering; Tianjin University; Tianjin 300072; China
  • Received:2003-11-13 Revised:2003-12-29 Published:2004-07-20 Online:2004-07-20

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摘要： Ag2O-Nb2O5-Ta2O5陶瓷系统(简称ANT)是一种新型的高频高介陶瓷材料,可以在1150℃以下进行中温烧结。在本系统中,添加Na+离子置换ANT系统中的A位Ag+离子形成ANNT系统,通过XRD,SEM以及能谱分析发现,少量Na+添加,导致晶格参数下降,即八面体空隙的体积将减小,从而抑制了Nb5+的松弛极化,有效地降低了ANT系统的损耗因子,使系统的介电性能达到:ε>500, tgδ≤5×10-4,容量温度系数αc=+12ppm/℃,ρv>1012Ω·cm。

关键词: 高频高介, ANT, 松弛极化, 介电损耗

Abstract: he Ag2O-Nb2O5-Ta2O5 (ANT) system is a novel high frequency high permittivity ceramic material which can be sintered below 1150℃. The doping of Na+ can replace A
site ions (Ag+) in ANT to form ANNT system. In this paper proper Na+ ions were introduced into ANT system. XRD, SEM, and energy spectrum analysis show that proper Na+ addition makes the
lattice parameter reduced, i.e. the capacity of octahedron reduced, the dielectric dissipation factor of the system is improved efficiently because of depression of relaxation polarization of Nb5+, and
the dielectric properties of the system are as follows: ε>500, tgδ≤5×10-4,
αc=+12ppm/℃,ρv>1012Ω·cm.

Key words: high frequency high permittivity, ANT, relaxation polarization, dissipation factor

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