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无机材料学报

• 研究论文 • 上一篇    

衬底负偏压对溅射Ta2O5薄膜晶化温度及介电性能的影响

许仕龙; 朱满康; 黄安平; 王波; 严辉   

  1. 北京工业大学新型功能材料教育部重点实验室 北京 100022
  • 收稿日期:2003-05-08 修回日期:2003-07-07 出版日期:2004-05-20 网络出版日期:2004-05-20

Effect of Substrate Bias on Crystallization Temperature and Dielectric Properties of Sputtered Ta2O5 Films

XU Shi-Long; ZHU Man-Kang; HUANG An-Ping; WANG Bo; YAN Hui   

  1. The Key Laboratory of Advanced Functional Materials of China Ministry Education; Beijing University of Technology Beijing 100022; China
  • Received:2003-05-08 Revised:2003-07-07 Published:2004-05-20 Online:2004-05-20

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摘要： 采用磁控溅射法,在衬底温度为620℃时,通过引入合适的衬底负偏压(100～200V),获得了结晶良好的Ta2O5薄膜,衬底负偏压增强了正离子对衬底表面的轰击作用,加速了其在衬底表面的松弛扩散效应,从而降低了Ta2O5薄膜的晶化温度,改善了其结晶性。同时,C—V测试结果表明:衬底负偏压进一步改善了Ta2O5薄膜的介电性能.

关键词: Ta2O5, 介电薄膜, 晶化温度, 衬底负偏压

Abstract: At the substrate temperature of 620℃, crystalline Ta2O5 films were sputtered by introducing suitable negative substrate bias of 100～200V.
It was thought that the ion bombardment to the substrate was enhanced with introducing the negative substrate bias. The diffusion and looseness of
deposited particles on the surface of substrate were accelerated. Consequently, the crystallization of Ta2O5 films was improved and
the crystallization temperature was lowered. Meanwhile, the C-V result indicated that the dielectric properties of Ta2O5 films were further
improved by introducing negative substrate bias.

Key words: Ta2O5, dielectric films, crystallization temperature, bias

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