PZT铁电薄膜Sol-Gel技术制备和电性能研究

无机材料学报

PZT铁电薄膜Sol-Gel技术制备和电性能研究

夏冬林¹; 刘梅冬²; 赵修建¹; 周学东¹

武汉理工大学硅酸盐材料工程教育部重点实验室, 武汉 430070; 2. 华中科技大学电子科学与技术系, 武汉430074

收稿日期:2003-01-23 修回日期:2003-07-04 出版日期:2004-03-20 网络出版日期:2004-03-20

Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing

XIA Dong-Lin¹; LIU Mei-Dong²; ZHAO Xiu-Jian¹; ZHOU Xue-Dong¹

1.Key Laboratory for Silicate Materials Science and Engineering of Ministry of Education; Wuhan University of Technology; Wuhan 430070; China; 2.Department of Electronics Science and Technology; Huazhong University of Science and Technology; Wuhan 430074; China

Received:2003-01-23 Revised:2003-07-04 Published:2004-03-20 Online:2004-03-20

摘要/Abstract

摘要： 以乙酸铅(Pb(CH₃COO)₂·3H₂O)、钛酸四丁酯(Ti(OC₄H₉)₄)、硝酸锆(Zr(NO₃)₄·5H₂O)替代锆醇盐为原料,通过在Pt/Ti/SiO₂/si基片与PZT薄膜之间引入PT种子层,采用改进的sol-gel工艺制备出无裂纹,致密性好,晶粒尺寸小且分布均匀的单一钙钛矿结构的Pb(Zr_0.53Ti_0.47)O₃铁电薄膜.实验结果表明,具有PT种子层的PZT铁电薄膜电性能较好.经600℃热处理的具有PT种子层的PZT薄膜,在1kHz测试频率下,其剩余极化强度和矫顽场分别为20μC/cm²和59kV/cm,介电常数和介电损耗分别为385和0.030.

关键词: 锆钛酸铅（PZT）薄膜, PT种子层, sol-gel法, 快速热处理, 电滞回线, I-V特性

Abstract: Lead zirconate titanate (Pb(Zr_0.53Ti_0.47)O₃, PZT) ferroelectric thin films were
deposited onto platinum coated silicon substrates with and without lead titanate(PbTiO₃,PT) seeding layers by a modified sol-gel processing
using zirconium nitrate as the zirconium source. The precursor solution for spin coating was prepared from lead acetate, tetrabutyl titanate, and
zirconium nitrate. The effect of the prepared PZT thin films with PT seedings on the microstructure and electrical properties were investigated.
The results show that the PZT thin films are of uniformity, density, and crack-free. The corresponding remanent polarization(P_r) and coercive
field(E_c) are 20μC/cm² and 59kV/cm respectively. Dielectric constant and loss tangent of PZT thin films with PT seedings are 385 and 0.03,
respectively.

Key words: lead zirconate titanate （PZT） film, PT seedings, sol-gel processing, rapid thermal annealing, hysteresis loop, Ⅰ-Ⅴ characteristic

中图分类号:

TQ174
TB43

夏冬林,刘梅冬,赵修建,周学东. PZT铁电薄膜Sol-Gel技术制备和电性能研究[J]. 无机材料学报.

XIA Dong-Lin,LIU Mei-Dong,ZHAO Xiu-Jian,ZHOU Xue-Dong. Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing[J]. Journal of Inorganic Materials.

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