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在多工位炉上CeO2:Bi12SiO20单晶生长的研究(Ⅱ)——空间生长实验部分

周燕飞1; 王锦昌1; 唐连安1; 陈诺夫2; 陈万春3   

  1. 1. 中国科学院上海硅酸盐研究所, 上海 200050; 2. 中国科学院半导体研究所, 北京 100083; 3. 中国科学院物理研究所, 北京 100080
  • 收稿日期:2003-03-07 修回日期:2003-04-04 出版日期:2004-03-20 网络出版日期:2004-03-20

Growth of CeO2:Bi12SiO20 Crystals in Multi-Position Furnace(Ⅱ)- Space Growth Experiment

ZHOU Yan-Fei1; WANG Jin-Chang1; TANG Lian-An1; CHEN Nuo-Fu2; CHEN Wan-Chun3   

  1. 1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China; 2. Institute of Semiconductors; Beijing 100083, China; 3. Institute of Physics, Chinese Academy of Sciences, Beijing 100080; China
  • Received:2003-03-07 Revised:2003-04-04 Published:2004-03-20 Online:2004-03-20

摘要: 掺Ce:Bi12SiO20单晶在神舟3号(SZ-3)飞船上成功地进行了空间生长,得到晶体尺寸为φ10mm×40mm.将空间生长的晶体和地面生长晶体对比发现:空间生长晶体的外观同地面生长晶体有明显差异.分析测试空间和地面晶体的X射线摇摆曲线、吸收曲线和喇曼光谱,结果表明:空间生长掺Ce:BSO晶体的结构完整性优于地面生长的晶体,掺Ce对BSO晶体光学性能的影响空间制备晶体要大于地面制备的晶体

关键词: 掺铈硅酸铋(Ce:BSO), 晶体生长, 微重力, 多工位炉, 喇曼光谱

Abstract: Ce-doped Bi12SiO20 single crystal with size of φ10mm×40mm was successfully grown in space on board of the spacecraft Shenzhou No.3. The surface morphology of space-grown crystal is different from that of ground-grown crystal.The space- and ground-grown crystals were measured by X-ray rocking curves, absorption spectra and micro-Raman spectra. The results show that the quality of Ce-doped crystal grown in space is better than that of the ground-grown one. The effect of doping on optical properties of BSO grown in space is evient in comparison with the ground-grown crystal.

Key words: doped cerium bismuth silicon oxides (Ce:BSO), crystal growth, multi-position furnace, microgravity, Raman spectrum

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