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CuO/SiO2复合薄膜的微观结构和发光特性分析

石 锋, 李玉国, 孙钦军   

  1. 山东师范大学 物理与电子科学学院, 济南 250014
  • 收稿日期:2008-06-24 修回日期:2008-09-25 出版日期:2009-03-20 网络出版日期:2009-03-20

Analysis to Microstructure and PhotoLuminescent Properties of CuO/SiO2 Composite Thin Films

SHI Feng, LI Yu-Guo, SUN Qin-Jun   

  1. College of Physics and Electronic, Shandong Normal University, Jinan 250014, China
  • Received:2008-06-24 Revised:2008-09-25 Published:2009-03-20 Online:2009-03-20

摘要:

采用射频磁控共溅射法在硅衬底上沉积Cu/SiO2 复合薄膜,然后在N2保护下高温退火,再于空气中自然冷却氧化,制备出低维CuO纳米结构,并对其微观结构和光致发光进行研究. 退火温度为1100℃时样品中主晶相为立方晶系的CuO(200)晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu、O元素,冷却氧化形成CuO/SiO2复合薄膜. 该温度下退火后,光致发光谱中出现紫外光和紫光,这是由于复合薄膜中CuO的导带底到Cu空穴缺陷能级的跃迁导致的.

关键词: 射频磁控共溅射法, CuO/SiO2复合薄膜, 微观结构, 光致发光特性

Abstract: Cu/SiO2 composite thin films were deposited on n-type Si(111) substrates by radio frequency (RF) magnetron cosputtering method, annealed at high temperature in N2 atmosphere, then cooling and oxidation in the air to fabricate low-dimensionality CuO nanostructure. The microstructure and photo luminescent properties were studied. The main phase of sample is cubic CuO(200) crystal face and sample forms nanoline structure with Cu, O elements as the main components to form CuO/SiO2 composite thin film in the sample surface after annealing at 1100℃. The ultraviolet light and purplelight appear in photoluminescence (PL) spectra, which is abscribed to the electron transition from the defect level,resulting from the Cu vacancies to the conductor band of CuO composite thin films.

Key words: radio frequency magnetron cosputtering, cupric oxide/sillica composite thin films, microstructure, photoluminescent properties

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