无机材料学报

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碳纳米管异质结构的 ECR-CVD法制备

王志1,2, 巴德纯3, 于春宏2, 梁吉1   

  1. 1. 清华大学机械工程系, 北京 100084; 2. 沈阳航空工业学院, 沈阳 110034; 3. 东北大学机械工程与自动化学院, 沈阳 110004
  • 收稿日期:2005-10-11 修回日期:2005-12-19 出版日期:2006-09-20 网络出版日期:2006-09-20

Synthesis of Carbon Nanotube Junction by ECR-CVD

WANG Zhi1,2, BA De-Chun3, YU Chun-Hong2, LIANG Ji1   

  1. 1. Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China; 2. Shenyang Institute of Aeronautical Engineering, Shenyang 110034, China; 3. School of Mechanical Engineering and Automation, Northeastern University, Shenyang, 110004, China
  • Received:2005-10-11 Revised:2005-12-19 Published:2006-09-20 Online:2006-09-20

摘要: 使用电子回旋共振微波等离子体化学气相沉积方法(ECR-CVD), 以Fe3O4纳米粒子为催化剂, 多孔硅为基底, 采用CH4/H2和CH4/B2H6/H2两种气源在连续的CVD过程中大量合成了一种新型的纳米管异质结构. 扫描电镜(SEM) 和透射电镜(TEM)观察表明: 合成的异质结构一端是类竹节状的掺硼碳纳米管, 另一端是光滑中空的纯碳纳米管. 异质结构采用底端生长模式, 先行生长的掺硼纳米管处于纳米管结构的顶端.

关键词: ECR-CVD, 异质结构, 碳纳米管, 硼掺杂

Abstract: A new type of nanotube junction was synthesized with CH4/H2 and CH 4/B2H6/H2 source gases in a continuous CVD process by electron cyclotron resonance chemical vapor deposition (ECR-CVD), Fe3O4 nanoparticle as the
catalyst and porous silicon as the substrate. Scanning electron microscope
(SEM) and transmission electron microscope (TEM) were used to evaluate the
morphology and structure. The result shows that the junction is joined with
a bamboo-like boron-doped CNT at one side and a straight tubular CNT at
another side. The junction grows via bottom-end growth mechanism, boron-doped CNT growing in first period is on the top of the nanotube junction.

Key words: ECR-CVD, junction, carbon nanotube, boron-dopedenddocument

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