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无机材料学报

无机材料学报

• 研究论文 • 上一篇    

Li-N-H共掺法制备 p型 ZnO薄膜

卢洋藩, 叶志镇, 曾昱嘉, 陈兰兰, 朱丽萍, 赵炳辉   

  1. (浙江大学硅材料国家重点实验室, 杭州 310027)
  • 收稿日期:2006-01-06 修回日期:2006-02-27 出版日期:2006-11-20 网络出版日期:2006-11-20

Preparation of Li-N-H Codoped p-type ZnO Films

LU Yang-Fan, YE Zhi-Zhen, ZENG Yu-Jia, CHEN Lan-Lan, ZHU Li-Ping, ZHAO Bing-Hui
  

  1. (State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China)
  • Received:2006-01-06 Revised:2006-02-27 Published:2006-11-20 Online:2006-11-20

PDF (PC)

1950

被引次数

30

摘要：

采用Li-N-H共掺技术在玻璃衬底上生长p型ZnO薄膜. XRD结果表明共掺ZnO薄膜具有高度cll轴取向, Hall测试表明薄膜的电阻率为25.2Ω·cm, Hall迁移率为0.5cm2/(V·s), 空穴浓度为4.92×1017/cm3. 此外, p-ZnO薄膜在可见光区域具有90%的高透射率.

关键词: p-ZnO, 磁控溅射, 共掺

Abstract: Li-N-H codoped p-type ZnO films were fabricated on glass substrates by DC reactive magnetron sputtering. X-ray diffraction, Hall-effect measurement, photoluminescence spectra and transmittance spectra were used to characterize the films. The results show that the codoped films are highly c-oriented with a p-type conduction, resistivity of 25.2Ω·cm, Hall mobility of 0.5cm2/(V·s), carrier density of 4.92×1017cm-3, and transmittance of about 90%.

Key words: p-type ZnO, magnetron sputtering, codoping

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