基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

doi:10.15541/jim20240094

无机材料学报 ›› 2024, Vol. 39 ›› Issue (9): 1063-1069.DOI: 10.15541/jim20240094

基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

杨佳霖¹(), 王亮君¹, 阮丝园¹, 蒋秀林²^,³, 杨长¹()

1.华东师范大学电子系, 极化材料与器件教育部重点实验室, 上海类脑智能材料与器件研究中心, 上海 200241
2.江苏大学智能柔性机械电子研究院, 镇江 212013
3.晶澳太阳能有限公司电池研发中心, 扬州 225000

收稿日期:2024-03-01 修回日期:2024-04-09 出版日期:2024-09-20 网络出版日期:2024-04-19
通讯作者: 杨长, 研究员. E-mail: cyang@phy.ecnu.edu.cn
作者简介:杨佳霖(1998-), 女, 硕士研究生. E-mail: 51214700087@stu.ecnu.edu.cn

Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

YANG Jialin¹(), WANG Liangjun¹, RUAN Siyuan¹, JIANG Xiulin²^,³, YANG Chang¹()

1. Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
2. Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, China
3. Cell R&D Center, JA Solar Holdings Co., Ltd, Yangzhou 225000, China

Received:2024-03-01 Revised:2024-04-09 Published:2024-09-20 Online:2024-04-19
Contact: YANG Chang, professor. E-mail: cyang@phy.ecnu.edu.cn
About author:YANG Jialin (1998-), female, Master candidate. E-mail: 51214700087@stu.ecnu.edu.cn
Supported by:
National Natural Science Foundation of China(62074056);Fundamental Research Funds for the Central Universities

摘要/Abstract

摘要：

近年来, 碘化铜(CuI)因其较高的本征霍尔迁移率、高光吸收和较大的激子结合能而成为一种新兴的p型宽带隙半导体。然而, 在传统半导体材料表面制备高质量CuI薄膜非常困难, 已有CuI基异质结器件的光谱响应和光电转换效率较低。本研究采用一种简易的金属碘化法制备了一种p-CuI/n-Si结构的光电二极管。虽然获得的CuI是带有明显结构缺陷的多晶薄膜, 但CuI/Si二极管具有很高的弱光灵敏度。其高达7.6×10⁴的整流比表明该光电二极管具有良好的缺陷容忍度, 这与p⁺n型二极管的单边异质结这一特殊结构有关。本研究对该p⁺n型二极管的光电响应进行了较为系统的研究, 选择波长分别为400、505、635和780 nm的不同单色激光器进行光响应测试。在零偏置电压条件下, 该器件为单边异质结, 耗尽层仅在硅一侧, 因此只有可见光被吸收。当施加-3 V的偏置电压时, 光电二极管被切换到“紫外-可见”双波段响应的工作模式。因此, 通过调整偏置电压可以使检测波长在“可见”波段和“紫外-可见”波段之间切换。此外, 本研究所得到的CuI/Si二极管对弱光照非常敏感。在入射光功率密度低至0.5 μW/cm²时, 其具有高达10¹³~10¹⁴ Jones的探测率, 明显优于其他铜基光电二极管。相关研究结果证实了CuI在与传统硅工业集成时的高应用潜力。

关键词: 碘化铜, 异质结, 光电探测器

Abstract:

In recent years, copper iodide (CuI) is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility, high optical absorption and large exciton binding energy. However, the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices, which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors. In this study, a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method. Although the CuI thin film is polycrystalline with obvious structural defects, the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10⁴, indicating a good defect tolerance. This is because of the unilateral heterojunction behavior of the formation of the p⁺n diode. In this work, the mechanism of photocurrent of the p⁺n diode has been studied comprehensively. Different monochromatic lasers with wavelengths of 400, 505, 635 and 780 nm have been selected for testing the photoresponse. Under zero-bias voltage, the device is a unilateral heterojunction, and only visible light can be absorbed at the Si side. On the other hand, when a bias voltage of -3 V is applied, the photodiode is switched to a broader “UV-visible” band response mode. Therefore, the detection wavelength range can be switched between the “Visible” and “UV-visible” bands by adjusting the bias voltage. Moreover, the obtained CuI/Si diode was very sensitive to weak light illumination. A very high detectivity of 10¹³-10¹⁴ Jones can be achieved with a power density as low as 0.5 μW/cm², which is significantly higher than that of other Cu-based diodes. These findings underscore the high application potential of CuI when integrated with the traditional Si industry.

Key words: copper iodide, heterojunction, photodetector

中图分类号:

TQ174

杨佳霖, 王亮君, 阮丝园, 蒋秀林, 杨长. 基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器[J]. 无机材料学报, 2024, 39(9): 1063-1069.

YANG Jialin, WANG Liangjun, RUAN Siyuan, JIANG Xiulin, YANG Chang. Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction[J]. Journal of Inorganic Materials, 2024, 39(9): 1063-1069.

图/表 7

Fig. 1 Fabrication and testing schematic diagram (a) Schematic structure of the fabricated p+n type CuI/Si heterojunction diode; (b) Schematic diagram of the photodiode test

Fig. 2 Structural and electrical characterization of the obtained CuI thin film (a) XRD pattern; (b) PL spectrum; (c) Optical transmittance; (d) SEM image

Fig. 3 I-V characteristic curve of the CuI/Si heterojunction

Fig. 4 I-V characteristic curves of the CuI/Si photodiode under different laser light wavelengths with a light power density of 50 μW/cm2 Dark current is plotted in dashed line; Colorful figure is available on website

Fig. 5 Responsivity of the CuI/Si photodiode as a function of light power density and responsivity under specific light intensity (a) 0 V bias applied; (b) -3 V bias applied; (c) 0 V bias applied under specific light intensity; (d) -3 V bias applied under specific light intensity

Table 1 Device parameters of the CuI/Si photodiodes

Wavelength/nm	Bias voltage/V	Responsivity (Weak/strong light)/(A·W^-1)	D* (Weak/strong light)/ (×10¹³, Jones)	EQE (Weak/strong light)/%
400	0	0.08/0.06	0.363/0.241	26/17
400	-3	3.58/0.15	15.4/0.669	1109/48
505	0	0.31/0.14	1.35/0.618	77/35
505	-3	3.46/0.30	14.9/1.31	849/74
635	0	0.65/0.13	2.82/0.561	127/25
635	-3	4.00/0.90	17.3/3.88	782/175
780	0	1.15/0.20	4.94/0.844	182/31
780	-3	4.70/0.67	20.3/2.92	747/107

Table 2 Summarization of photoelectric properties in Si-based photodiodes

Diode structure	Wavelength/ nm	Power density/ (μW·cm⁻²)	Bias voltage/V	D*/Jones	Responsivity/ (A·W^-1)	EQE/%	Ref.
SnSe/Si	405	10	-4	3.4×10¹¹	0.21	-	[36]
	405	300	-4	3.0×10¹¹	0.18	-
	650	10	0	1.1×10¹¹	0.20	-
	650	300	0	1.0×10¹¹	0.17	-
MoS₂/Si	514	3	-2	2.2×10¹¹	1.25	-	[37]
MoS₂/Si	514	80	-2	8.0×10¹¹	0.90	-	[37]
Graphene-Si	730	10	-2	2.1×10⁸	0.35	-	[38]
Si/ZnO	550	-	-2	-	0.37	-	[39]
ZnTe-TeO₂/Si	350	-	0	4.0×10¹²	0.03	-	[43]
ZnTe-TeO₂/Si	850	-	0	1.4×10¹³	0.08	-	[43]
CuI/Si	400	0.5	-3	1.54×10¹⁴	3.58	1109	This work
	400	50	-3	6.69×10¹²	0.15	48
	780	0.5	0	4.94×10¹³	1.15	182
	780	50	0	8.44×10¹²	0.20	31

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基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

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