无机材料学报 ›› 2024, Vol. 39 ›› Issue (9): 1063-1069.DOI: 10.15541/jim20240094
杨佳霖1(), 王亮君1, 阮丝园1, 蒋秀林2,3, 杨长1(
)
收稿日期:
2024-03-01
修回日期:
2024-04-09
出版日期:
2024-09-20
网络出版日期:
2024-04-19
通讯作者:
杨长, 研究员. E-mail: cyang@phy.ecnu.edu.cn作者简介:
杨佳霖(1998-), 女, 硕士研究生. E-mail: 51214700087@stu.ecnu.edu.cn
YANG Jialin1(), WANG Liangjun1, RUAN Siyuan1, JIANG Xiulin2,3, YANG Chang1(
)
Received:
2024-03-01
Revised:
2024-04-09
Published:
2024-09-20
Online:
2024-04-19
Contact:
YANG Chang, professor. E-mail: cyang@phy.ecnu.edu.cnAbout author:
YANG Jialin (1998-), female, Master candidate. E-mail: 51214700087@stu.ecnu.edu.cn
Supported by:
摘要:
近年来, 碘化铜(CuI)因其较高的本征霍尔迁移率、高光吸收和较大的激子结合能而成为一种新兴的p型宽带隙半导体。然而, 在传统半导体材料表面制备高质量CuI薄膜非常困难, 已有CuI基异质结器件的光谱响应和光电转换效率较低。本研究采用一种简易的金属碘化法制备了一种p-CuI/n-Si结构的光电二极管。虽然获得的CuI是带有明显结构缺陷的多晶薄膜, 但CuI/Si二极管具有很高的弱光灵敏度。其高达7.6×104的整流比表明该光电二极管具有良好的缺陷容忍度, 这与p+n型二极管的单边异质结这一特殊结构有关。本研究对该p+n型二极管的光电响应进行了较为系统的研究, 选择波长分别为400、505、635和780 nm的不同单色激光器进行光响应测试。在零偏置电压条件下, 该器件为单边异质结, 耗尽层仅在硅一侧, 因此只有可见光被吸收。当施加-3 V的偏置电压时, 光电二极管被切换到“紫外-可见”双波段响应的工作模式。因此, 通过调整偏置电压可以使检测波长在“可见”波段和“紫外-可见”波段之间切换。此外, 本研究所得到的CuI/Si二极管对弱光照非常敏感。在入射光功率密度低至0.5 μW/cm2时, 其具有高达1013~1014 Jones的探测率, 明显优于其他铜基光电二极管。相关研究结果证实了CuI在与传统硅工业集成时的高应用潜力。
中图分类号:
杨佳霖, 王亮君, 阮丝园, 蒋秀林, 杨长. 基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器[J]. 无机材料学报, 2024, 39(9): 1063-1069.
YANG Jialin, WANG Liangjun, RUAN Siyuan, JIANG Xiulin, YANG Chang. Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction[J]. Journal of Inorganic Materials, 2024, 39(9): 1063-1069.
Fig. 1 Fabrication and testing schematic diagram (a) Schematic structure of the fabricated p+n type CuI/Si heterojunction diode; (b) Schematic diagram of the photodiode test
Fig. 2 Structural and electrical characterization of the obtained CuI thin film (a) XRD pattern; (b) PL spectrum; (c) Optical transmittance; (d) SEM image
Fig. 4 I-V characteristic curves of the CuI/Si photodiode under different laser light wavelengths with a light power density of 50 μW/cm2 Dark current is plotted in dashed line; Colorful figure is available on website
Fig. 5 Responsivity of the CuI/Si photodiode as a function of light power density and responsivity under specific light intensity (a) 0 V bias applied; (b) -3 V bias applied; (c) 0 V bias applied under specific light intensity; (d) -3 V bias applied under specific light intensity
Wavelength/nm | Bias voltage/V | Responsivity (Weak/strong light)/(A·W-1) | D* (Weak/strong light)/ (×1013, Jones) | EQE (Weak/strong light)/% |
---|---|---|---|---|
400 | 0 | 0.08/0.06 | 0.363/0.241 | 26/17 |
-3 | 3.58/0.15 | 15.4/0.669 | 1109/48 | |
505 | 0 | 0.31/0.14 | 1.35/0.618 | 77/35 |
-3 | 3.46/0.30 | 14.9/1.31 | 849/74 | |
635 | 0 | 0.65/0.13 | 2.82/0.561 | 127/25 |
-3 | 4.00/0.90 | 17.3/3.88 | 782/175 | |
780 | 0 | 1.15/0.20 | 4.94/0.844 | 182/31 |
-3 | 4.70/0.67 | 20.3/2.92 | 747/107 |
Table 1 Device parameters of the CuI/Si photodiodes
Wavelength/nm | Bias voltage/V | Responsivity (Weak/strong light)/(A·W-1) | D* (Weak/strong light)/ (×1013, Jones) | EQE (Weak/strong light)/% |
---|---|---|---|---|
400 | 0 | 0.08/0.06 | 0.363/0.241 | 26/17 |
-3 | 3.58/0.15 | 15.4/0.669 | 1109/48 | |
505 | 0 | 0.31/0.14 | 1.35/0.618 | 77/35 |
-3 | 3.46/0.30 | 14.9/1.31 | 849/74 | |
635 | 0 | 0.65/0.13 | 2.82/0.561 | 127/25 |
-3 | 4.00/0.90 | 17.3/3.88 | 782/175 | |
780 | 0 | 1.15/0.20 | 4.94/0.844 | 182/31 |
-3 | 4.70/0.67 | 20.3/2.92 | 747/107 |
Diode structure | Wavelength/ nm | Power density/ (μW·cm−2) | Bias voltage/V | D*/Jones | Responsivity/ (A·W-1) | EQE/% | Ref. |
---|---|---|---|---|---|---|---|
SnSe/Si | 405 | 10 | -4 | 3.4×1011 | 0.21 | - | [ |
405 | 300 | -4 | 3.0×1011 | 0.18 | - | ||
650 | 10 | 0 | 1.1×1011 | 0.20 | - | ||
650 | 300 | 0 | 1.0×1011 | 0.17 | - | ||
MoS2/Si | 514 | 3 | -2 | 2.2×1011 | 1.25 | - | [ |
514 | 80 | -2 | 8.0×1011 | 0.90 | - | ||
Graphene-Si | 730 | 10 | -2 | 2.1×108 | 0.35 | - | [ |
Si/ZnO | 550 | - | -2 | - | 0.37 | - | [ |
ZnTe-TeO2/Si | 350 | - | 0 | 4.0×1012 | 0.03 | - | [ |
850 | - | 0 | 1.4×1013 | 0.08 | - | ||
CuI/Si | 400 | 0.5 | -3 | 1.54×1014 | 3.58 | 1109 | This work |
400 | 50 | -3 | 6.69×1012 | 0.15 | 48 | ||
780 | 0.5 | 0 | 4.94×1013 | 1.15 | 182 | ||
780 | 50 | 0 | 8.44×1012 | 0.20 | 31 |
Table 2 Summarization of photoelectric properties in Si-based photodiodes
Diode structure | Wavelength/ nm | Power density/ (μW·cm−2) | Bias voltage/V | D*/Jones | Responsivity/ (A·W-1) | EQE/% | Ref. |
---|---|---|---|---|---|---|---|
SnSe/Si | 405 | 10 | -4 | 3.4×1011 | 0.21 | - | [ |
405 | 300 | -4 | 3.0×1011 | 0.18 | - | ||
650 | 10 | 0 | 1.1×1011 | 0.20 | - | ||
650 | 300 | 0 | 1.0×1011 | 0.17 | - | ||
MoS2/Si | 514 | 3 | -2 | 2.2×1011 | 1.25 | - | [ |
514 | 80 | -2 | 8.0×1011 | 0.90 | - | ||
Graphene-Si | 730 | 10 | -2 | 2.1×108 | 0.35 | - | [ |
Si/ZnO | 550 | - | -2 | - | 0.37 | - | [ |
ZnTe-TeO2/Si | 350 | - | 0 | 4.0×1012 | 0.03 | - | [ |
850 | - | 0 | 1.4×1013 | 0.08 | - | ||
CuI/Si | 400 | 0.5 | -3 | 1.54×1014 | 3.58 | 1109 | This work |
400 | 50 | -3 | 6.69×1012 | 0.15 | 48 | ||
780 | 0.5 | 0 | 4.94×1013 | 1.15 | 182 | ||
780 | 50 | 0 | 8.44×1012 | 0.20 | 31 |
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