非本征背照触发平面型4H-SiC光导开关性能研究

doi:10.15541/jim20240136

无机材料学报 ›› 2024, Vol. 39 ›› Issue (9): 1070-1076.DOI: 10.15541/jim20240136

• 研究快报 • 上一篇

非本征背照触发平面型4H-SiC光导开关性能研究

王浩¹^,², 刘学超¹(), 郑重³, 潘秀红¹, 徐锦涛¹, 朱新锋¹^,², 陈锟¹, 邓伟杰¹, 汤美波¹, 郭辉³, 高攀⁴

1.中国科学院上海硅酸盐研究所, 上海 201889
2.中国科学院大学, 北京 100049
3.西安电子科技大学微电子学院, 西安 710071
4.上海电机学院材料学院, 上海 201306

收稿日期:2024-03-20 修回日期:2024-04-10 出版日期:2024-09-20 网络出版日期:2024-04-19
通讯作者: 刘学超, 研究员. E-mail: xcliu@mail.sic.ac.cn
作者简介:王浩(1999-), 男, 硕士研究生. E-mail: wanghao218@mails.ucas.ac.cn

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

WANG Hao¹^,², LIU Xuechao¹(), ZHENG Zhong³, PAN Xiuhong¹, XU Jintao¹, ZHU Xinfeng¹^,², CHEN Kun¹, DENG Weijie¹, TANG Meibo¹, GUO Hui³, GAO Pan⁴

1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201889, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. School of Microelectronics, Xidian University, Xi’an 710071, China
4. School of Material Science, Shanghai Dianji University, Shanghai 201306, China

Received:2024-03-20 Revised:2024-04-10 Published:2024-09-20 Online:2024-04-19
Contact: LIU Xuechao, professor. E-mail: xcliu@mail.sic.ac.cn
About author:WANG Hao (1999-), male, Master candidate. E-mail: wanghao218@mails.ucas.ac.cn
Supported by:
National Key R&D Program of China(2021YFA0716304);Shanghai Science and Technology Programs(22511100300);Shanghai Science and Technology Programs(23DZ2201500)

摘要/Abstract

摘要：

光导开关(PCSS)是脉冲高功率系统和微波技术应用中的关键器件, 减小碳化硅(SiC)光导开关的损伤, 延长器件寿命是重要的研究方向。本工作在直径4英寸、厚度500 μm的高纯半绝缘4H-SiC衬底上制备多种结构的光导开关器件, 重点研究了导通电阻和损伤机制。1 kV偏压下, 采用532 nm、170 mJ的脉冲激光背面照射触发经过950 ℃退火的Au/TiW/Ni电极体系的碳化硅光导开关, 最小导通电阻为6.0 Ω。当激光光斑直径大于光导开关器件沟道宽度时, 采用背面照射触发相较于前面照射触发可以减小导通电阻并减轻损伤。碳化硅光导开关器件在10 Hz激光下触发200 s, Au/TiW/Ni体系光导开关产生黑色枝状烧蚀损伤, 主要原因是热载流子引起的热应力。采用400 ℃退火的硼镓共掺杂氧化锌(BGZO)薄膜替换金属Ni, 黑色烧蚀得到缓解, 但是在光导开关阳极出现同心圆弧损伤, 其主要成因是脉冲激光的衍射和热效应的共同作用。

关键词: 碳化硅, 光导开关, 导通电阻, 失效分析

Abstract:

Photoconductive semiconductor switch (PCSS) can be applied in pulsed high power systems and microwave techniques. However, reducing the damage and increasing the lifetime of silicon carbide (SiC) PCSS are still faced severe challenges. In this study, PCSSs with various structures were prepared on 4-inch diameter, 500 μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated. It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950 ℃ had a minimum on-state resistance of 6.0 Ω at 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger. The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS. For the 200 s trigger test by a 10 Hz laser, the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers. Replacing metal Ni with boron gallium co-doped zinc oxide (BGZO) thin films annealed at 400 ℃, black branch-like ablation was alleviated while concentric arc damage was obvious at the anode. The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

Key words: silicon carbide, photoconductive semiconductor switch, on-state resistance, failure analysis

中图分类号:

TN36

王浩, 刘学超, 郑重, 潘秀红, 徐锦涛, 朱新锋, 陈锟, 邓伟杰, 汤美波, 郭辉, 高攀. 非本征背照触发平面型4H-SiC光导开关性能研究[J]. 无机材料学报, 2024, 39(9): 1070-1076.

WANG Hao, LIU Xuechao, ZHENG Zhong, PAN Xiuhong, XU Jintao, ZHU Xinfeng, CHEN Kun, DENG Weijie, TANG Meibo, GUO Hui, GAO Pan. Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger[J]. Journal of Inorganic Materials, 2024, 39(9): 1070-1076.

图/表 10

Fig. 1 Basic fabrication flowchart of SiC PCSS

Fig. 2 Diagrams of SiC PCSS electrodes components (a) Au/TiW/Ni/SiC; (b) Au/TiW/BGZO/SiC

Fig. 3 Schematic diagram of PCSS testing circuit

Fig. 4 Comparison of on-state resistance of SiC1_Ni and SiC2_Ni PCSS by FSI and BSI single trigger

Fig. 5 Electrode damage microscope images of SiC2_Ni PCSS after FSI and BSI single trigger tests (a) Anode FSI; (b) Cathode FSI; (c) Cathode BSI; (d) Anode BSI

Fig. 6 Output peak voltage plots of SiC PCSSs by multiple triggers (a) SiC1_Ni; (b) SiC2_Ni; (c) SiC1_BGZO; (d) SiC2_BGZO

Table 1 GDMS results of SiC1 and SiC2

Element	SiC1/(μg·g^-1)	SiC2/(μg·g^-1)
B	3.2	3.0
Al	41	22
V	<0.05	<0.05

Fig. 7 SEM images of SiC1_Ni PCSS damage after multiple triggers tests (a) Cathode; (b) Anode

Table 2 EDS results of SiC1_Ni PCSS

Element	Residual metal/(%, in atom)	Ablation/(%, in atom)
C	53.41	55.91
O	BDL	1.31
Si	13.85	42.42
Ti	2.03	BDL
Ni	11.14	0.25
W	7.41	BDL
Au	12.17	0.10

Fig. 8 Microscope images on electrode damage of SiC1_BGZO PCSS after trigger tests (a) Cathode and (b) anode after a single trigger test; (c) Cathode and (d) anode after multiple triggers

参考文献 25

[1]	CHANG S H, LIU X C, HUANG W, et al. Preparation and properties of lateral contact structure SiC photoconductive semiconductor switches. Journal of Inorganic Materials, 2012, 27(10): 1058.
[2]	BRAGG J W, SULLIVAN W W, MAUCH D, et al. All solid-state high power microwave source with high repetition frequency. Review of Scientific Instruments, 2013, 84(5): 054703.
[3]	HARRIS J R, BLACKFIELD D, CAPORASO G J, et al. Vacuum insulator development for the dielectric wall accelerator. Journal of Applied Physics, 2008, 104(2): 023301.
[4]	ZHANG D, XU Z, CHENG G, et al. Strongly enhanced THz generation enabled by a graphene hot-carrier fast lane. Nature Communications, 2022, 13: 6404. DOI PMID
[5]	YAN C F, SHI E W, CHEN Z Z, et al. Super fast and high power SiC photoconductive semiconductor switches. Journal of Inorganic Materials, 2008, 23(3): 425.
[6]	MAJDA-ZDANCEWICZ E, SUPRONIUK M, PAWŁOWSKI M, et al. Current state of photoconductive semiconductor switch engineering. Opto-Electronics Review, 2018, 26(2): 92.
[7]	CHOWDHURY A R, NESS R, JOSHI R P. Assessing lock-on physics in semi-insulating GaAs and InP photoconductive switches triggered by subbandgap excitation. IEEE Transactions on Electron Devices, 2018, 65(9): 3922.
[8]	XU M, WANG Y, LIU C, et al. Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation. Plasma Science and Technology, 2022, 24(7): 075503.
[9]	JAMES C, HETTLER C, DICKENS J. Design and evaluation of a compact silicon carbide photoconductive semiconductor switch. IEEE Transactions on Electron Devices, 2011, 58(2): 508.
[10]	YANG F, WANG Z, LIANG Z, et al. Electrical performance advancement in SiC power module package design with kelvin drain connection and low parasitic inductance. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019, 7(1): 84.
[11]	CHU X, LIU J, XUN T, et al. MHz repetition frequency, hundreds kilowatt, and sub-nanosecond agile pulse generation based on linear 4H-SiC photoconductive semiconductor. IEEE Transactions on Electron Devices, 2022, 69(2): 597.
[12]	SULLIVAN J S, STANLEY J R. 6H-SiC photoconductive switches triggered at below bandgap wavelengths. IEEE Transactions on Dielectrics and Electrical Insulation, 2007, 14(4): 980.
[13]	HETTLER C, SULLIVAN W W, DICKENS J, et al. Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications. Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, San Diego, 2012.
[14]	HUANG J, HU L, MA Z, et al. Study on photoelectric efficiency and failure mechanism of high purity 4H-SiC PCSS. IEEE Transactions on Electron Devices, 2023, 70(11): 5762.
[15]	ZHU K, DOGAN S, MOON Y T, et al. Effect of n⁺-GaN subcontact layer on 4H-SiC high-power photoconductive switch. Applied Physics Letters, 2005, 86(26): 261108.
[16]	XIAO L, YANG X, DUAN P, et al. Effect of electron avalanche break-down on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption. Applied Optics, 2018, 57(11): 2804.
[17]	MAUCH D, SULLIVAN W, BULLICK A, et al. High power lateral silicon carbide photoconductive semiconductor switches and investigation of degradation mechanisms. IEEE Transactions on Plasma Science, 2015, 43(6): 2021.
[18]	ZHENG Z, HUANG W, HAN W W, et al. Analyzing the effects of aluminum-doped ZnO and Ag layers for the transparent electrode vertical PCSS. IEEE Transactions on Electron Devices, 2020, 67(6): 2414.
[19]	ZHOU T Y, LIU X C, HUANG W, et al. Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches. Chinese Physics B, 2015, 24(4): 044209.
[20]	WANG B, WANG L, NIU X, et al. Breakdown behavior of SiC photoconductive switch with transparent electrode. AIP Advances, 2022, 12(8): 085210.
[21]	CHOWDHURY A R, MAUCH D, JOSHI R P, et al. Contact extensions over a high-k dielectric layer for surface field mitigation in high power 4H-SiC photoconductive switches. IEEE Transactions on Electron Devices, 2016, 63(8): 1.
[22]	FENG Z, LUAN C, XIAO L, et al. Performance of a novel rear-triggered 4H-SiC photoconductive semiconductor switch. IEEE Transactions on Electron Devices, 2023, 70(2): 627.
[23]	FU W, WANG L, WANG B, et al. Investigation on the photocurrent tail of vanadium-compensated 4H-SiC for microwave application. AIP Advances, 2022, 12(9): 095121.
[24]	ZHAI Z, ZHANG R, TANG A, et al. Fabrication of microstructure on C/SiC surface via femtosecond laser diffraction. Materials Letters, 2021, 293: 293711.
[25]	KIM I W, DOH S J, KIM C C, et al. Effect of evaporation on surface morphology of epitaxial ZnO films during postdeposition annealing. Applied Surface Science, 2005, 241(1): 179.

非本征背照触发平面型4H-SiC光导开关性能研究

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

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