W/Cr共掺杂对CaBi2Nb2O9陶瓷晶体结构及电学性能的影响

doi:10.15541/jim20240065

无机材料学报 ›› 2024, Vol. 39 ›› Issue (8): 887-894.DOI: 10.15541/jim20240065

W/Cr共掺杂对CaBi₂Nb₂O₉陶瓷晶体结构及电学性能的影响

黄建锋¹^,²(), 梁瑞虹¹, 周志勇¹()

1.中国科学院上海硅酸盐研究所, 上海 200050
2.中国科学院大学材料科学与光电工程中心, 北京 100049

收稿日期:2024-02-05 修回日期:2024-02-28 出版日期:2024-08-20 网络出版日期:2024-03-30
通讯作者: 周志勇, 研究员. E-mail: zyzhou@mail.sic.ac.cn
作者简介:黄建锋(1999-), 男, 硕士研究生. E-mail: huangjianfeng21@mails.ucas.ac.cn
基金资助:
国家自然科学基金重点项目(51932010)

Effects of W/Cr Co-doping on the Crystal Structure and Electric Properties of CaBi₂Nb₂O₉ Piezoceramics

HUANG Jianfeng¹^,²(), LIANG Ruihong¹, ZHOU Zhiyong¹()

1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2024-02-05 Revised:2024-02-28 Published:2024-08-20 Online:2024-03-30
Contact: ZHOU Zhiyong, professor. E-mail: zyzhou@mail.sic.ac.cn
About author:HUANG Jianfeng (1999-), male, Master candidate. E-mail: huangjianfeng21@mails.ucas.ac.cn
Supported by:
National Natural Science Foundation of China(51932010)

摘要/Abstract

摘要：

铌酸铋钙(CaBi₂Nb₂O₉, CBN)是一种典型的铋层状结构压电材料, 具有高居里温度(约943 ℃)、高稳定性等特点, 是600 ℃以上高温压电振动传感器的重要候选功能元件, 但其压电系数和高温电阻率较低, 严重制约了CBN在高温压电振动传感器领域的实际应用。为了提高CBN压电陶瓷的高温稳定性, 采用固相法制备了W/Cr共掺杂的CaBi₂Nb_1.975W_0.025O₉-x%Cr₂O₃(CBNW-xCr, 0<x≤0.2)单相铋层状结构压电陶瓷, 研究了W/Cr元素共掺杂对晶体结构和电学性能的影响。结果表明: W/Cr元素共掺杂使压电陶瓷晶体结构由正交晶系向四方晶系转变, 晶体结构畸变程度增强, 并且压电性能和绝缘性能显著提高。当x=0.1时, CBNW-0.1Cr压电陶瓷的居里温度为931 ℃, 压电系数为15.6 pC/N, 600 ℃时电阻率达到10⁶ Ω∙cm量级, 介电损耗仅为0.029, 该体系在高温压电领域有重要的潜在应用前景。

关键词: 高温压电陶瓷, 晶体结构, 压电性能, 赝四方畸变

Abstract:

Calcium bismuth niobate (CaBi₂Nb₂O₉) is a typical bismuth layered structure piezoelectric material with high Curie temperature (about 943 ℃) and high stability, which is an important candidate functional element for high temperature vibration sensors above 600 ℃. However, its low piezoelectric coefficient and high temperature resistivity seriously limit the signal acquisition of high-temperature piezoelectric vibration sensor. To improve the comprehensive performance, in this work, W/Cr co-doped CaBi₂Nb_1.975W_0.025O₉-x%Cr₂O₃ (CBNW-xCr, 0<x≤0.2) Aurivillius phase ceramics were prepared via conventional solid-state sintering route. The effects of W/Cr co-doping on the crystal structure and electrical properties of CBN piezoelectric ceramics were investigated. The results show that co-doping of W/Cr elements transforms crystal structure of the ceramics from orthorhombic to tetragonal crystal system, enhances distortion of the crystal structure, and significantly improves piezoelectric and insulating properties of the piezoelectric ceramics. When x=0.1, the Curie temperature is 931 ℃, the piezoelectric coefficient is 15.6 pC/N, the resistivity reaches the order of 10⁶ Ω∙cm at 600 ℃, and the dielectric loss is only 0.029, which endows the system an important potential application in the field of high-temperature piezoelectricity.

Key words: high-temperature piezoelectric ceramic, crystal structure, piezoelectric property, pseudo-tetragonal distortion

中图分类号:

TQ174

黄建锋, 梁瑞虹, 周志勇. W/Cr共掺杂对CaBi₂Nb₂O₉陶瓷晶体结构及电学性能的影响[J]. 无机材料学报, 2024, 39(8): 887-894.

HUANG Jianfeng, LIANG Ruihong, ZHOU Zhiyong. Effects of W/Cr Co-doping on the Crystal Structure and Electric Properties of CaBi₂Nb₂O₉ Piezoceramics[J]. Journal of Inorganic Materials, 2024, 39(8): 887-894.

图/表 8

图1 CBNW-xCr压电陶瓷样品的室温XRD图谱

Fig. 1 XRD patterns of CBNW-xCr piezoelectric ceramics under room temperature (a) XRD patterns; (b) Enlarged XRD patterns (32.5°≤2θ≤33.5°)

图2 CBNW-xCr压电陶瓷XRD图谱的Rietveld精修结果

Fig. 2 Rietveld refinement results of XRD patterns for CBNW-xCr piezoelectric ceramics (a) x=0.01; (b) x=0.05; (c) x=0.1; (d) x=0.2; (e) Variation of cell parameters with doping concentration

图3 CBNW-xCr压电陶瓷样品的SEM照片

Fig. 3 SEM images for CBNW-xCr piezoelectric ceramic samples (a) x=0.01; (b) x=0.05; (c) x=0.1; (d) x=0.2

图4 CBNW-xCr压电陶瓷介电常数与介电损耗随温度的变化

Fig. 4 Variations of dielectric constant and dielectric loss with temperature for CBNW-xCr piezoelectric ceramics (a) Dielectric constant vs temperature; (b) Curie temperature at 1 MHz; (c) Dielectric loss vs temperature; (d) Rate of change of dielectric loss

图5 CBNW-xCr压电陶瓷电阻率随温度的变化

Fig. 5 Resistivity vs temperature for CBNW-xCr piezoelectric ceramics (a) Resistivity vs temperature; (b-f) Resistivity fitted by Arrhenius function

图6 CBNW-xCr压电陶瓷的压电系数

Fig. 6 Piezoelectric coefficient (d33) of CBNW-xCr piezoelectric ceramics (a) Variation of d33 with doping concentration; (b) Variation of d33 with annealing temperature

图7 CBNW-xCr压电陶瓷晶体结构畸变

Fig. 7 Crystal structure distortion of CBNW-xCr piezoelectric ceramics (a) Schematic of the crystal structure; (b) Tilt and rotation angles of NbO6 octahedra; (c) Trends of d33 and tilt angle with doping concentration

图8 CBNW-xCr压电陶瓷的电滞回线

Fig. 8 Ferroelectric hysteresis loops of CBNW-xCr piezoelectric ceramics (a) Ferroelectric hysteresis loops; (b) Trends of Pr and Pmax-Pr with doping concentration

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W/Cr共掺杂对CaBi₂Nb₂O₉陶瓷晶体结构及电学性能的影响

Effects of W/Cr Co-doping on the Crystal Structure and Electric Properties of CaBi₂Nb₂O₉ Piezoceramics

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