[1] |
FOUTZ B E, O’LEARY S K, SHUR M S, et al. Transient electron transport in wurtzite GaN, InN, and AlN. Journal of Applied Physics, 1999, 85(11): 7727.
|
[2] |
SHEN L, COFFIE R, BUTTARI D, et al. High-power polarization- engineered GaN/AlGaN/GaN HEMTs without surface passivation. IEEE Electron Device Letters, 2004, 25(1): 7.
|
[3] |
AKASAKI I. Key inventions in the history of nitride-based blue LED and LD. Journal of Crystal Growth, 2007, 300(1): 2.
|
[4] |
TAO H C, XU S R, ZHANG J C, et al. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation. Optics Express, 2023, 31(13): 20850.
DOI
PMID
|
[5] |
DU J J, XU S R, PENG R S, et al. Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids. Science China Technological Sciences, 2021, 64(7): 1583.
|
[6] |
NAKAMURA S. InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices. IEEE Journal of Selected Topics in Quantum Electronics, 1998, 4(3): 483.
|
[7] |
RIGUTTI L, TCHERNYCHEVA M, DE LUNA BUGALLO A, et al. Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire. Nano Letters, 2010, 10(8): 2939.
DOI
PMID
|
[8] |
WANG S S, GU B, XU Y, et al. Growth methods and its applications in optoelectronic devices of GaN-based semiconductor materials. Chinese Journal of Electron Devices, 2002, 25(1): 1.
|
[9] |
AMANO H, SAWAKI N, AKASAKI I, et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Applied Physics Letters, 1986, 48(5): 353.
|
[10] |
YEN C H, LAI W C, YANG Y Y, et al. GaN-based light-emitting diode with sputtered AlN nucleation layer. IEEE Photonics Technology Letters, 2012, 24(4): 294.
|
[11] |
WANG L, WANG L, REN F, et al. GaN grown on AlN/sapphire templates. Acta Physica Sinica, 2010, 59(11): 8021.
|
[12] |
ZHANG X Y, PENG D C, HAN J, et al. Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD. Surfaces and Interfaces, 2023, 36: 102589.
|
[13] |
FARES C, REN F, TADJER M J, et al. Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire. Applied Physics Letters, 2020, 117(18): 182103.
|
[14] |
BOSUND M, SAJAVAARA T, LAITINEN M, et al. Properties of AlN grown by plasma enhanced atomic layer deposition. Applied Surface Science, 2011, 257(17): 7827.
|
[15] |
SHIH H Y, LEE W H, KAO W C, et al. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing. Science Reports, 2017, 7: 39717.
|
[16] |
KOEHLER A D, NEPAL N, ANDERSON T J, et al. Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation. IEEE Electron Device Letters, 2013, 34(9): 1115.
|
[17] |
CHEN D, WANG Z, HU F C, et al. Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer. Optics Express, 2021, 29(22): 36559.
DOI
PMID
|
[18] |
LIU C, LIU S, HUANG S, et al. Plasma-enhanced atomic layer deposition of AlN epitaxial thin film for AlN/GaN heterostructure TFTs. IEEE Electron Device Letters, 2013, 34(9): 1106.
|
[19] |
NEPAL N, QADRI S B, HITE J K, et al. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy. Applied Physics Letters, 2013, 103(8): 082110.
|
[20] |
FENG J H, TANG L D, LIU B W, et al. Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2013, 62(11): 117302.
|
[21] |
ELERS K E, RITALA M, LESKELÄ M, et al. Atomic layer epitaxy growth of AIN thin films. Le Journal de Physique IV, 1995, 5(2): 1021.
|
[22] |
VAN BUI H, WIGGERS F B, GUPTA A, et al. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015, 33(1): 01A111.
|
[23] |
HAGEDORN S, KNAUER A, WEYERS M, et al. AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2019, 37(2): 020914.
|
[24] |
MANASEVIT H M. Single-crystal gallium arsenide on insulating substrates. Applied Physics Letters, 1968, 12(4): 156.
|
[25] |
SADEGHPOUR S, CEYSSENS F, PUERS R. Crystalline growth of AlN thin films by atomic layer deposition. Journal of Physics: Conference Series, 2016, 757(1): 012003.
|
[26] |
KIM S, OH J, KANG J, et al. Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage. Journal of Crystal Growth, 2004, 262(1/4): 7.
|
[27] |
CHEN Z B, ZHANG J C, XU S R, et al. Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AlN nucleation layer. Materials Research Bulletin, 2017, 89: 193.
|
[28] |
GAO Y, XU S R, PENG R S, et al. Comparative research of GaN growth mechanisms on patterned sapphire substrates with sputtered AlON nucleation layers. Materials, 2020, 13(18): 3933.
|
[29] |
MELNIK Y V, VASSILEVSKI K V, NIKITINA I P, et al. Physical properties of bulk GaN crystals grown by HVPE. MRS Internet Journal of Nitride Semiconductor Research, 1997, 2(39): 1.
|
[30] |
KOZAWA T, KACHI T, KANO H, et al. Thermal stress in GaN epitaxial layers grown on sapphire substrates. Journal of Applied Physics, 1995, 77(9): 4389.
|
[31] |
HUSHUR A, MANGHNANI M H, NARAYAN J. Raman studies of GaN/sapphire thin film heterostructures. Journal of Applied Physics, 2009, 106(5): 054317.
|
[32] |
BAN K, YAMAMOTO J I, TAKEDA K, et al. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells. Applied Physics Express, 2011, 4(5): 052101.
|