无机材料学报 ›› 2023, Vol. 38 ›› Issue (9): 1069-1075.DOI: 10.15541/jim20230045
所属专题： 【能源环境】钙钛矿(202310)
蔡凯(
), 靳志文()
收稿日期:2023-01-29
修回日期:2023-04-11
出版日期:2023-09-20
网络出版日期:2023-05-04
通讯作者:
靳志文, 教授. E-mail: jinzw@lzu.edu.cn作者简介:蔡 凯(1998-), 男, 硕士研究生. E-mail: caik20@lzu.edu.cn
基金资助:
CAI Kai(), JIN Zhiwen()
Received:2023-01-29
Revised:2023-04-11
Published:2023-09-20
Online:2023-05-04
Contact:
JIN Zhiwen, professor. E-mail: jinzw@lzu.edu.cnAbout author:CAI Kai (1998-), male, Master candidate. E-mail: caik20@lzu.edu.cn
Supported by:摘要：
二维(2D)钙钛矿以其固有的量子阱结构、较大的激子结合能和良好的稳定性, 在光电应用领域中具有广阔的前景。然而, 提高二维钙钛矿薄膜质量、降低成本并简化制备工艺仍然面临巨大的挑战。本工作在低退火温度(80 ℃)且无需其他特殊处理的条件下, 采用溶液法制备高质量二维钙钛矿(PEA)2PbI4薄膜, 并进一步制备了光电探测器。结果表明, 这种光电探测器有较低的暗电流(10-11 A), 在450 nm光照下具有良好的响应度(107 mA·W-1)、较高的探测率(2.05×1012 Jones)和快速响应时间(250 μs/330 μs)。持续控制光照1200 s后, 器件可以保持95%的光电流。此外, 器件静置30 d后光电流几乎保持不变。本研究为开发稳定和高性能光电器件提供了良好的途径。
中图分类号:
蔡凯, 靳志文. 基于二维钙钛矿(PEA)2PbI4的光电探测器[J]. 无机材料学报, 2023, 38(9): 1069-1075.
CAI Kai, JIN Zhiwen. Photodetector Based on Two-dimensional Perovskite (PEA)2PbI4[J]. Journal of Inorganic Materials, 2023, 38(9): 1069-1075.
图1 (a)在玻璃衬底上制备的光电探测器器件结构, (b) (PEA)2PbI4薄膜制备工艺示意图和(c) 80 ℃退火后(PEA)2PbI4薄膜的SEM照片
Fig. 1 (a) Structure of the photodetector device prepared on a glass substrate, (b) schematic diagram of preparation process for the (PEA)2PbI4 thin film, and (c) SEM image of the (PEA)2PbI4 thin film after being annealed at 80 ℃
图2 (a)典型的(PEA)2PbI4薄膜的XRD谱图; (b)二维层状(PEA)2PbI4的晶体结构; (PEA)2PbI4薄膜的(c)UV-Vis吸收谱图和(d)PL光谱
Fig. 2 (a) XRD pattern of a typical (PEA)2PbI4 film,(b) crystal structure of two-dimensional layered (PEA)2PbI4, and (c) UV-Vis absorption and (d) PL spectra of (PEA)2PbI4 film
图3 (PEA)2PbI4光电探测器的(a)暗电流随施加电压的变化曲线, (b)在暗态下暗电流随时间的变化曲线, 在1 mW/cm2光功率密度、不同波长光照下的(c) I-V曲线和(d) I-t曲线
Fig. 3 (a) Dark current versus applied voltage, (b) dark current versus time in the dark state, (c) I-V curves, and (d) I-t curves illuminated at different wavelengths with 1 mW/cm2 for (PEA)2PbI4 photodetector Colorful figures are available on website
图4 (PEA)2PbI4光电探测器在450 nm不同光强照射下(a) I-V曲线和(b) I-t曲线, (c)在450 nm光照下光电流与光强的拟合直线, (d)在不同光强下的响应度和探测率, (e)响应时间和(f)在不同测试频率下的噪声电流
Fig. 4 (a) I-V and (b) I-t curves illuminated at 450 nm with different light intensities, (c) fitted line of photocurrent vs. light intensity illuminated at 450 nm, (d) responsivities and detectivities at different light intensities, (e) response time and (f) noise currents tested at different frequencies for (PEA)2PbI4 photodetector Colorful figures are available on website
图5 (PEA)2PbI4薄膜和(PEA)2PbI4光电探测器的稳定性
Fig. 5 Stability of the 2D (PEA)2PbI4 film and photodetector (a) XRD patterns and (b) UV-Vis absorption spectra of (PEA)2PbI4 films before and after laid in the dark and N2 atomsphere for 1 m; (c) I-t curves of (PEA)2PbI4 photodetectors illuminated at 0.5 mW·cm-2 before and after 30 d; (d) I-t curves of the device under continuous illumination of 1200 s
图S1 (a) (PEA)2PbI4薄膜光电探测器照片; (b) 200 ℃高温退火后的(PEA)2PbI4薄膜的SEM照片
Fig. S1 (a) Picture of a photodetector based on (PEA)2PbI4 film; (b) SEM image of (PEA)2PbI4 film after being annealed at high temperature(200 ℃)
图S2 (PEA)2PbI4薄膜的能量色散X射线(EDS)光谱图
Fig. S2 EDS mappings of (PEA)2PbI4 thin film
图S3 未经过处理与经过DMF预旋涂处理的(PEA)2PbI4薄膜的XRD谱图
Fig. S3 XRD patterns of (PEA)2PbI4 without and with DMF treatment before spin-coating
图S4 (PEA)2PbI4薄膜的Tauc图, 光学带隙为2.357 eV
Fig. S4 Tauc plot of (PEA)2PbI4 film with an optical band gap of 2.357 eV
图S5 (PEA)2PbI4薄膜的偏压依赖性光电导
Fig. S5 Bias-dependent photoconductivity of (PEA)2PbI4
图S6 上电极光电探测器在光暗态下的I-V曲线
Fig. S6 I-V curves of photodetector with up-electrode in the light-dark state
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