无机材料学报 ›› 2023, Vol. 38 ›› Issue (1): 87-96.DOI: 10.15541/jim20220439

• 研究论文 • 上一篇    下一篇

p-n异质结BiVO4/g-C3N4光阳极的制备及其光电化学水解性能

王如意1,2(), 徐国良1,2,3, 杨蕾1,2(), 邓崇海1,2, 储德林4, 张苗5, 孙兆奇5()   

  1. 1.合肥学院 能源材料与化工学院, 合肥 230601
    2.合肥学院 先进电池材料与技术重点实验室, 合肥 230601
    3.长鑫存储技术有限公司, 合肥 230000
    4.安徽大学 物质科学与信息技术研究院, 合肥 230039
    5.安徽大学 材料科学与工程学院, 合肥 230039
  • 收稿日期:2022-07-28 修回日期:2022-09-25 出版日期:2022-09-30 网络出版日期:2022-09-30
  • 通讯作者: 杨 蕾, 副教授. E-mail: ylei531@163.com;
    孙兆奇, 教授. E-mail: szq@ahu.edu.cn
  • 作者简介:王如意(1996-), 男, 硕士研究生. E-mail: 445113000@qq.com
  • 基金资助:
    国家自然科学基金(61804039);安徽省高校自然科学研究项目(KJ2021A1017);合肥学院人才科研项目(20RC35);安徽省高校协同创新项目(GXXT-2021-013);合肥学院研究生教育教学研究项目(2021Yjyxm01);安徽省高校学科(专业)拔尖人才学术资助项目(gxbjZD2021085);安徽省重点研究与开发计划(201904b11020040)

p-n Heterostructured BiVO4/g-C3N4 Photoanode: Construction and Its Photoelectrochemical Water Splitting Performance

WANG Ruyi1,2(), XU Guoliang1,2,3, YANG Lei1,2(), DENG Chonghai1,2, CHU Delin4, ZHANG Miao5, SUN Zhaoqi5()   

  1. 1. School of Energy Materials and Chemical Engineering, Hefei University, Hefei 230601, China
    2. Key Laboratory of Materials and Technologies for Advanced Batteries, Hefei University, Hefei 230601, China
    3. Changxin Memory Technologies, Inc., Hefei 230000, China
    4. Institute of Physical Science and Information Technology, Anhui University, Hefei 230039, China
    5. School of Materials Science and Engineering, Anhui University, Hefei 230039, China
  • Received:2022-07-28 Revised:2022-09-25 Published:2022-09-30 Online:2022-09-30
  • Contact: YANG Lei, associate professor. E-mail: ylei531@163.com;
    SUN Zhaoqi, professor. E-mail: szq@ahu.edu.cn
  • About author:WANG Ruyi (1996-), male, Master candidate. E-mail: 445113000@qq.com
  • Supported by:
    National Natural Science Foundation of China(61804039);Key Project of Natural Science Research of Universities in Anhui Province(KJ2021A1017);Talent Research Fund of Hefei University(20RC35);University Synergy Innovation Program of Anhui Province(GXXT-2021-013);Graduate Education and Teaching Research Project of Hefei University(2021Yjyxm01);Academic Support Project for Academic (Professional) Top Talents in Anhui Universities(gxbjZD2021085);Key Projects of Research and Development Program of Anhui Province(201904b11020040)

摘要:

钒酸铋(BVO)可用于光电化学(PEC)水解产氢, 但受限于其缓慢的表面水氧化动力学, 在电极表面修饰单一的析氧助催化剂达不到理想的性能。本工作在BVO电极表面修饰FeNiOx助催化剂可以显著降低起始电压, 增强光电化学性能。此外, 沉积g-C3N4后修饰FeNiOx助催化剂得到的光电极具有更优异的性能。厚度适合的g-C3N4纳米片与BVO构成Ⅱ型p-n异质结, 有效抑制了光生电子空穴的复合, 促进了电极的电荷分离。电化学测试结果表明, 沉积了g-C3N4后, 电极的电荷分离效率达到88.2%, 比BVO/FeNiOx (60.6%)提升了近1.5倍。经过g-C3N4和FeNiOx协同修饰的BVO/g-C3N4/FeNiOx电极, 表面电荷注入效率达到了90.2%, 同时, 在1.23 V (vs. RHE)条件下光电流密度达到4.63 mA∙cm-2, 是纯BVO (1.86 mA∙cm-2)的2.48倍。本工作为开发制备高性能光阳极提供了一种有效的策略。

关键词: g-C3N4纳米片, BiVO4, 光电化学水解, FeNiOx助催化剂, p-n异质结

Abstract:

Bismuth vanadate (BVO) can be used for photoelectrochemical (PEC) water splitting to hydrogen. However, suffering from its high charge-recombination and slow surface catalytic reaction, the PEC performance is far below the expectation, and the modification of the co-catalysts only on the electrode cannot overcome this disadvantage. Here, we report FeNiOx cocatalyst decorated on the BVO photoanode, which can restrict the onset potential and improve the PEC performance. Moreover, a more effective dual modified-BVO photoanode is formed, with the loading of g-C3N4 before decoration of FeNiOx cocatalyst. The type-II p-n heterojunction composed by g-C3N4 nanosheets and BVO, can inhibit recombination of photogenerated charge, and promote the separation of charge effectively at the electrode. Results show that the charge separation efficiency of the electrode reaches 88.2% after the insertion of g-C3N4, which is nearly 1.5 times that of BVO/FeNiOx (60.6%). Moreover, surface charge injection efficiency of the dual-modified BVO/g-C3N4/FeNiOx electrode reaches 90.2%, while the current density reaches 4.63 mA∙cm-2 at 1.23 V (vs. RHE). This work provides a facile approach to develope high performance photoanodes for PEC water splitting.

Key words: g-C3N4 nanosheets, BiVO4, PEC water splitting, FeNiOx co-catalyst, p-n heterojunction

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