无机材料学报 ›› 2023, Vol. 38 ›› Issue (3): 329-334.DOI: 10.15541/jim20220646

• 研究快报 • 上一篇    下一篇

大尺寸Er,Yb:YAG单晶的生长及其性能

王志强1(), 吴济安1, 陈昆峰1(), 薛冬峰2()   

  1. 1.山东大学 晶体材料国家重点实验室, 新一代半导体材料研究院, 济南250100
    2.中国科学院 深圳先进技术研究院, 多尺度晶体材料研究中心, 深圳 518055

Large-size Er,Yb:YAG Single Crystal: Growth and Performance

WANG Zhiqiang1(), WU Ji’an1, CHEN Kunfeng1(), XUE Dongfeng2()   

  1. 1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
    2. Multiscale Crystal Materials Research Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
  • Received:2022-11-01 Revised:2022-11-30 Published:2023-01-17 Online:2023-01-17
  • Contact: CHEN Kunfeng, professor. E-mail: Kunfeng.Chen@sdu.edu.cn;
    XUE Dongfeng, professor. E-mail: df.xue@siat.ac.cn
  • About author:WANG Zhiqiang (1998-), male, Master. E-mail: wangzhiqiang@mail.sdu.edu.cn
  • Supported by:
    National Natural Science Foundation of China(51832007);National Natural Science Foundation of China(52220105010);Natural Science Foundation of Shandong Province(ZR2020ZD35);Qilu Young Scholars Program of Shandong University

摘要:

Er3+和Yb3+共掺杂的YAG晶体是一种非常重要的光学晶体, 目前, 该晶体已经广泛应用于高功率固体激光器, 但是采用提拉法生长大尺寸、低缺陷的掺杂YAG晶体仍然面临很多挑战。本工作采用快速提拉法成功获得了直径为80 mm、长度为230 mm的Er3+和Yb3+共掺杂的YAG单晶。采用不同测试方法评价其结构、掺杂浓度、光吸收、发光性能和刻蚀缺陷。晶片不同位置的拉曼峰峰位以及半峰宽没有明显变化, 说明晶片中心和边缘部分的晶体结构和应变是均匀的。刻蚀结果表明, 腐蚀坑均匀分布在整个腐蚀表面上, 没有观察到位错腐蚀坑特征, 这意味着晶体接近完美。Er3+和Yb3+在不同波长下的强发光峰以及辉光放电质谱结果证明Er,Yb:YAG单晶中成功掺杂了稀土离子。本工作采用提拉法成功生长了大尺寸、低缺陷的Er,Yb:YAG单晶, 证实了快速生长方法对YAG晶体中掺杂双稀土离子是有效的。

关键词: YAG单晶, 稀土掺杂, 快速提拉法, 发光性能

Abstract:

Currently, although Er3+ and Yb3+ co-doped YAG crystals are widely used in high power solid state lasers, there are still many challenges in growing large size, low defect doped YAG crystals using the Czochralski (Cz) method. In this paper, large-sized Er3+ and Yb3+ co-doped YAG bulk crystal with a diameter of 80 mm and a length of 230 mm was obtained by the fast Cz growth method. Their structure, doping concentration, optical absorption, luminescence performances, and etching defects were evaluated.According to the Raman detecting results, there is no significant variation in the peak positions and full width at half maxima (FWHM) of the Raman peaks at different locations on the wafer, indicating that the crystal structure and strain at central and edge section of thel wafer are uniformity. The etching results show that the corrosion pits are evenly distributed over the entire corrosion surfacewithout dislocation corrosion pit, which means that the crystals are highly near perfect. Strong luminescence peaks of Yb3+ and Er3+ at different wavelengths and glow discharge mass spectrometry results demonstrate the successful doping of rare earth ions in Er,Yb:YAG single crystals. This work successfully used the Cz method to grow large-sized, low-defect Er,Yb:YAG single crystals, confirming that the fast growth method is effective for doping double rare-earth ions in YAG crystals.

Key words: YAG single crystal, rare earth doping, fast Cz growth method, luminescence property

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