溶液法制备AgBi2I7薄膜及其光电探测性能研究

doi:10.15541/jim20220569

无机材料学报 ›› 2023, Vol. 38 ›› Issue (9): 1055-1061.DOI: 10.15541/jim20220569

所属专题：【能源环境】钙钛矿(202310)

溶液法制备AgBi₂I₇薄膜及其光电探测性能研究

胡盈¹(), 李自清²(), 方晓生¹^,²()

1.材料科学系, 聚合物分子工程国家重点实验室, 复旦大学, 上海 200433
2.光电研究院, 上海市智能光电与感知前沿科学研究基地, 复旦大学, 上海 200433

收稿日期:2022-09-27 修回日期:2022-11-29 出版日期:2023-09-20 网络出版日期:2022-12-27
通讯作者: 李自清, 青年副研究员. E-mail: lzq@fudan.edu.cn;
方晓生, 教授. E-mail: xshfang@fudan.edu.cn
作者简介:胡盈(1999-), 女, 硕士研究生. E-mail: huying@fudan.edu.cn
基金资助:
国家自然科学基金(12061131009);国家自然科学基金(51872050);国家自然科学基金(62204047)

Solution-prepared AgBi₂I₇ Thin Films and Their Photodetecting Properties

HU Ying¹(), LI Ziqing²(), FANG Xiaosheng¹^,²()

1. State Key Laboratory of Molecular Engineering of Polymers, Department of Materials Science, Fudan University, Shanghai 200433, China
2. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China

Received:2022-09-27 Revised:2022-11-29 Published:2023-09-20 Online:2022-12-27
Contact: LI Ziqing, associate research fellow. E-mail: lzq@fudan.edu.cn;
FANG Xiaosheng, professor. E-mail: xshfang@fudan.edu.cn
About author:HU Ying (1999-), female, Master candidate. E-mail: huying@fudan.edu.cn
Supported by:
National Natural Science Foundation of China(12061131009);National Natural Science Foundation of China(51872050);National Natural Science Foundation of China(62204047)

摘要/Abstract

摘要：

AgBi₂I₇薄膜具有良好的光电特性和环境稳定性, 是构筑异质结紫外光电探测器的有力候选材料之一。本研究采用溶液法制备AgBi₂I₇薄膜, 通过优化前驱体溶液的浓度和溶剂类型(正丁胺和二甲基亚砜)等工艺参数, 研究了其光电探测性能。采用最优方案在宽带隙的GaN上制备AgBi₂I₇薄膜, 构建AgBi₂I₇/GaN异质结。该异质结对UVA射线具有良好的选择性探测(探测半峰宽约30 nm)。在3 V偏压和350 nm紫外光照射下, 器件开关比超过5个数量级, 达到27.51 A/W的高响应度和1.53×10¹⁴ Jones的高探测率。研究表明溶液法制备的AgBi₂I₇薄膜有望应用于构建高性能的异质结紫外光电探测器。

关键词: AgBi₂I₇薄膜, 溶液法, 异质结, 紫外光电探测

Abstract:

AgBi₂I₇ thin film is one of the important candidates for constructing heterojunction ultraviolet photodetectors, due to their great optoelectronic properties and environmental stability. In this study, AgBi₂I₇ thin films were prepared by solution method and their photodetecting properties were investigated. By optimizing technological parameters such as concentration of the precursor solution and type of solvent (n-butylamine and DMSO), their photodetecting performance were investigated. AgBi₂I₇ thin films were fabricated on wide-bandgap GaN by optimal scheme to construct an AgBi₂I₇/GaN heterojunction. The heterojunction has a great selective detection of UVA-ray of which full width at half maximum is about 30 nm. Under 3 V bias and 350 nm UV irradiation, the On/Off ratio of the device exceeds 5 orders of magnitude, achieving a high responsivity of 27.51 A/W and a high detection rate of 1.53×10¹⁴ Jones. Therefore, the present research indicates that AgBi₂I₇thin films prepared by solution method are promising to be applied to construct high-performance heterojunction ultraviolet photodetectors.

Key words: AgBi₂I₇ thin film, solution method, heterojunction, ultraviolet photodetection

中图分类号:

TQ174

胡盈, 李自清, 方晓生. 溶液法制备AgBi₂I₇薄膜及其光电探测性能研究[J]. 无机材料学报, 2023, 38(9): 1055-1061.

HU Ying, LI Ziqing, FANG Xiaosheng. Solution-prepared AgBi₂I₇ Thin Films and Their Photodetecting Properties[J]. Journal of Inorganic Materials, 2023, 38(9): 1055-1061.

图/表 12

图1 采用DMSO溶剂制备AgBi2I7薄膜的实验流程图

Fig. 1 Experimental procedure of preparing AgBi2I7 thin film by DMSO solvent

图2 (a) AgBi2I7晶体结构和(b)处于八面体碘中心的六配位银离子

Fig. 2 (a) Crystal structure of AgBi2I7 and (b) six-coordinated silver-iodide octahedron sites

图3 (a) ABI-Bx(x=10, 14, 18)和(b) ABI-Dy(y=14, 16, 18)的XRD图谱

Fig. 3 XRD patterns of (a) ABI-Bx (x=10, 14, 18) and (b) ABI- Dy (y=14, 16, 18)

图4 (a) ABI-B14和 (b) ABI-D16的SEM照片; (c) 不同前驱体制备的薄膜的紫外-可见光吸收光谱图

Fig. 4 SEM images of (a) ABI-B14 and (b) ABI-D16, and (c) UV-Vis absorption spectra of films from different precursors Colorful figures are available on website

图5 AgBi2I7薄膜的I-t和I-V曲线

Fig. 5 I-t and I-V curves of AgBi2I7 thin films (a, b) I-t curves of (a) ABI-Bx (x=10, 14, 18) and (b) ABI-Dy(y=14, 16, 18) at 1 V; (c, d) I-V curves of (c) ABI-B14 and (d) ABI-D16 Colorful figures are available on website

表1 ABI-Bx(x=10, 14, 18)和ABI-Dy(y=14, 16, 18)的光暗电流

Table 1 Photocurrents and dark currents of ABI-Bx (x=10, 14, 18) and ABI-Dy (y=14, 16, 18)

Sample	Photocurrent/nA		Dark current/nA	On/Off ratio
ABI-B10	0.56		0.49	1.14
ABI-B14	2.60		1.88	1.38
ABI-B18	0.98		0.81	1.21
ABI-D14		0.19	0.18	1.06
ABI-D16		0.32	0.27	1.20
ABI-D18		0.35	0.30	1.20

图6 AgBi2I7/GaN异质结的结构与光电特性

Fig. 6 Device structure and photoelectric properties of AgBi2I7/GaN heterojunctions (a) Device structure; (b) Energy diagram; (c) I-V curves; (d) I-t curves to 350 nm UV light; (e) Responsivity and detectivity; (f) Performance comparison of lead-free photodetectors Colorful figures are available on website

图S1 AgBi2I7薄膜的光学显微镜照片

Fig. S1 Optical micrographs of AgBi2I7 thin films (a) ABI-B10; (b) ABI-B14; (c) ABI-B18; (d) ABI-D14; (e) ABI-D16; (f) ABI-D18

图S2 AgBi2I7薄膜的SEM照片

Fig. S2 SEM images of AgBi2I7 thin films (a) ABI-D14; (b) ABI-D18; (c) ABI-B10; (d) ABI-B18

图S3 (a) ABI-B14和(b) ABI-D16的Tauc图谱

Fig. S3 Tauc plots of (a) ABI-B14 and (b) ABI-D16

图S4 AgBi2I7/GaN器件的EQE图谱

Fig. S4 EQE of AgBi2I7/GaN heterojunctions

表S1 典型无铅钙钛矿光电探测器光电性能总结

Table S1 Summary of optoelectronic performances of typical lead-free perovskite photodetectors

Photodetector	Light/nm	On/Off ratio	Responsivity/(A·W^-1)	Detectivity /Jones	Ref.
Ag-AgBi₂I₇-GaN-Ag	350	8.7×10⁵	27.51	1.53×10¹⁴	This work
Graphene-Cs₃Bi₂I₉-p-Si	650	>10²	23.6	1.75×10¹³	[1]
In-GaN-Cs₂AgBiBr₆-NiO-Au	365	1.16×10³	0.33	3.28×10¹¹	[2]
ITO-SnO₂-CsBi₃I₁₀-Au	650	2.33×10⁵	0.2	1.8×10¹³	[3]
Graphene-CsSnI₃-SnO₂-ITO	405	10⁴	0.237	1.18×10¹²	[4]
FTO-SnO₂-Ag₂BiI₅-carbon	473	6.25×10⁵	0.3	5.3×10¹²	[5]
ITO-SnO₂-Cs₃Bi₂I₉-PTAA-Au-ITO	405	5.7×10³	0.052	>10¹²	[6]
Au-CsCu₂I₃/GaN-In	325	1.1×10⁴	0.37	1.83×10¹³	[7]
Au-Cs₃Sb₂I₉-Au	450	5.5×10³	0.446	1.27 × 10¹¹	[8]

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溶液法制备AgBi₂I₇薄膜及其光电探测性能研究

Solution-prepared AgBi₂I₇ Thin Films and Their Photodetecting Properties

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