离子氧化物晶体管阵列多级痛觉敏化仿生研究

doi:10.15541/jim20220594

摘要/Abstract

摘要：

多级痛觉感知对于生物避免外界伤害刺激具有十分重要的意义。本工作以海藻酸钠生物聚合物作为离子耦合栅介质, 成功制备了5×5无结痛觉感知晶体管阵列。该器件能够在低电压下(2 V)正常工作, 且具有较大的电流开关比(>10⁴)以及开态电流(>10 μA)。这种器件不仅能模拟突触的重要功能, 如兴奋性突触后电流、双脉冲易化、动态滤波等, 而且还成功模拟了痛觉神经网络的多级空间感知敏化特性。构建该网络系统为下一代神经形态类脑系统应用提供了新的途径。

关键词: 氧化物半导体, 晶体管阵列, 痛觉神经网络, 时空致敏

Abstract:

Multistage pain perception is of great significance for surviving the outside harmful stimuli for organisms. In this work, using a sodium alginate biopolymer electrolyte as neurotransmitter layer, a 5×5 array of junctionless transistoris successfully fabricated for pain perception. The device operates well at low voltage (2 V) with a large current on-off ratio (>10⁴) and on-state current (>10 μA). This coplanar-gate array can not only emulate the important functions of synapses, such as excitatory postsynaptic current, paired-pulse facilitation, and dynamic filtering, but also successfully mimic pain-perception and sensitization abilities of the artificial nociceptor network. Furthermore, this work also successfully emulates the multistage spatio-temporal sensitization in the nociceptor network. Construction of this kind of network system provides a new way for the application of the next-generation neuromorphic brain-like system.

Key words: oxide semiconductor, transistor array, nociceptor network, spatio-temporal sensitization

中图分类号:

TQ174

李彦冉, 谢叮咚, 蒋杰. 离子氧化物晶体管阵列多级痛觉敏化仿生研究[J]. 无机材料学报, 2023, 38(4): 429-436.

LI Yanran, XIE Dingdong, JIANG Jie. Bionic Research on Multistage Pain Sensitization Based on Ionic Oxide Transistor Array[J]. Journal of Inorganic Materials, 2023, 38(4): 429-436.

图/表 7

图1 (a)器件结构及其测试过程示意图, 单个器件的(b)转移曲线及其(c)输出曲线

Fig. 1 (a) Diagram of device structure and test process, (b) transfer curve and (c) corresponding output curve of single transistor

图2 (a)生物突触示意图, 由突触前尖峰(脉冲高度: 2.10 V, 脉冲宽度: 10 ms)触发的(b)EPSC和(c)PPF, (d)PPF指数拟合, 和(e)在不同刺激频率下(2~50 Hz)的EPSC的响应

Fig. 2 (a) Schematic image of a biological synapse, (b) EPSC and (c) PPF triggered by a presynaptic spike with amplitude at 2.10 V, duration at 10 ms, (d) PPF index fitting, and (e) EPSCs recorded in response to the different stimulus train with frequency ranging from 2 Hz to 50 Hz

图3 疼痛感知神经元表征

Fig. 3 Characteristics of the artificial painful perceptual neuron (a) Structural diagram of painful perceptual neuron; (b) EPSC response by the device applying ten electrical pulses with 10 ms pulse width and different pulse amplitudes from 1.30 V to 4.00 V,which cannot reach threshold current (Ith = 1 µA) until the pulse amplitude up to 2.64 V; (c) Fitting curve of pain threshold voltage; (d) EPSC output by the device with fixed pulse amplitude (2.10 V) and the width increasing from 10 ms to 400 ms; (e) Response of device to continuous multiple pulses with different amplitudes; (f) Fitting for response of device to continuous multiple pulses with different amplitudes (2.00, 2.20, 3.00 and 3.60 V); Colorful figures are available on website

表1 图3(f)中不同参数的拟合结果

Table 1 Fitting results of different parameters in Fig. 3(f)

Voltage/V	Y₀/μA	Q₁/μA	Q₂/μA	q₁/s	q₂/s
3.60	7.38	-2.89	-2.26	0.07	0.86
3.00	4.43	-1.79	-1.31	0.06	0.68
2.20	1.25	-0.35	-0.31	0.04	0.62
2.00	0.95	-0.22	-0.29	0.03	0.42

图4 痛觉感受器网络及其痛觉感知和敏化功能

Fig. 4 Nooceptor network and its pain perception and sensitization function (a) Schematic diagram of the junctionless transistor array used to construct the nociceptor network; (b) Transfer curves of channel C1 corresponding to 5 different grate positions; (c) Statistical results of Ion and VTH corresponding to the different gates; (d) EPSC response at different grate positions corresponding to C1 under fixed grate voltage (VGS=1.80 V); (e) EPSC response of five channels (C1-C5) corresponding to five different grid positions (G1-G5); Colorful figures are available on website

图5 4.00 V和2.20 V的脉冲序列分别加在栅极(a)G1, (b)G2, (c)G3, (d)G4, (e)G5上所得到的EPSC的响应(两个连续刺激序列的时间间隔为0.01、1.00和10.00 s); (f)敏化度Z(B2/B1)和栅极位置及脉冲序列间隔时间之间的关系;两次脉冲序列不同时间间隔((g) 0.01, (h)1.00, (i)10.00 s), 敏化度Z和阵列中栅极位置之间的关系

Fig. 5 Response of EPSC with two pulse sequence (4.00 and 2.20 V) applied in (a) G1, (b) G2, (c) G3, (d) G4, and (e) G5; (f) Relationship between sensitization Z and gate position and pulse sequence interval; (g-i) Relationship between sensitization Z(B2/B1) and gate position in the array at different time intervals ((g) 0.01s, (h) 1.00 s, (i) 10.00 s)

表2 图5(f)中不同参数的拟合结果

Table 2 Fitting results of different parameters in Fig. 5(f)

Position	Z₀/%	N₀/%	τ/s
G₁	19.08	21.90	2.02
G₂	15.60	8.53	1.32
G₃	11.28	8.20	1.55
G₄	8.72	5.08	1.60
G₅	8.00	4.03	1.13

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