高分子辅助沉积法制备LaNiO3外延导电薄膜

doi:10.15541/jim20210271

无机材料学报 ›› 2022, Vol. 37 ›› Issue (5): 561-566.DOI: 10.15541/jim20210271

所属专题：【信息功能】电介质材料

高分子辅助沉积法制备LaNiO₃外延导电薄膜

杨柱¹^,²(), 郭少波¹(), 蔡恒辉¹^,², 董显林¹^,²^,³, 王根水¹^,²^,³()

1. 中国科学院上海硅酸盐研究所, 无机功能材料与器件实验室, 上海 200050
2. 中国科学院大学材料科学与光电子工程中心, 北京 100049
3. 中国科学院上海硅酸盐研究所, 高性能陶瓷和超微结构国家重点实验室, 上海 200050

收稿日期:2021-04-26 修回日期:2021-05-23 出版日期:2022-05-20 网络出版日期:2021-07-20
通讯作者: 王根水, 研究员. E-mail: genshuiwang@mail.sic.ac.cn; 郭少波, 高级工程师. E-mail: guoshaobo@mail.sic.ac.cn
作者简介:杨柱(1996–), 男, 硕士研究生. E-mail: yangzhu@student.sic.ac.cn

Preparation of Epitaxial Metallic LaNiO₃ Thin Film by Polymer Assisted Deposition

YANG Zhu¹^,²(), GUO Shaobo¹(), CAI Henghui¹^,², DONG Xianlin¹^,²^,³, WANG Genshui¹^,²^,³()

1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Received:2021-04-26 Revised:2021-05-23 Published:2022-05-20 Online:2021-07-20
Contact: ANG Genshui, professor. E-mail: genshuiwang@mail.sic.ac.cn; GUO Shaobo, senior engineer. E-mail: guoshaobo@mail.sic.ac.cn
About author:YANG Zhu (1996–), male, Master candidate. E-mail: yangzhu@student.sic.ac.cn
Supported by:
National Natural Science Foundation of China(11774366);International Partnership Program of Chinese Academy of Sciences(GJHZ1821)

摘要/Abstract

摘要：

近年来LaNiO₃(LNO)作为铁电超晶格、超导异质结和催化剂材料引起了广泛关注。本研究采用简便、低成本的高分子辅助沉积法(Polymer Assisted Deposition, PAD), 在(001)取向的SrTiO₃(STO)单晶衬底上制备了导电性能优异的LNO外延薄膜, 并对其进行各种结构和电学表征。摇摆曲线半高宽为0.38°, 表明LNO薄膜结晶度良好。高分辨XRD的φ扫描进一步证实LNO薄膜在STO衬底上异质外延生长。原位变温XRD测试进一步表征了LNO薄膜的外延生长过程。结果表明, 聚合物分解之后金属阳离子在单晶基体上有序释放并外延结晶。XPS结果表明, 采用PAD制备的LaNiO₃薄膜不存在氧空位。薄膜表面光滑, 粗糙度为0.67 nm。在10~300 K温度区间内的变温电阻率表明LNO薄膜具有良好的导电性能。上述结果表明：PAD制备的LaNiO₃薄膜具有较好的综合性能, PAD在制备外延功能薄膜材料方面具有很大的潜力。

关键词: LaNiO₃, 导电薄膜, 高分子辅助沉积法, 外延

Abstract:

LaNiO₃ (LNO), as a promising material in ferroelectric super lattices, super conductive heterostructures and catalysts has recently attracted great interest. Herein, a facile and low-cost polymer assisted deposition (PAD) method is established to prepare epitaxial LNO thin films on (001) orientated SrTiO₃ (STO) with excellent conductivity. Various structural and electrical characterizations of the film were investigated. The film has good crystallinity with a full-width at half-maximum value of 0.38° from the rocking curve for the (002) reflection. High resolution XRD φ-scans further confirmed the heteroepitaxial growth of LNO film on STO substrate. There are four peaks separated by 90°, showing that the LNO thin film is cubic-on-cubic grown on STO substrate. In-situ high temperature XRD measurement showed epitaxial growth of LNO thin film on STO substrate. Metal cations could be released orderly on the monocrystalline substrate and epitaxial crystallization occurs after decomposition of polymer. XPS results indicated that LaNiO₃ thin film fabricated by PAD was stoichiometric without oxygen vacancy. The atomic force microscopy analysis showed that the smooth surface with root-mean-square surface roughness was 0.67 nm. The resistivity as functions of temperature revealed that it has good conductivity from 10 K to 300 K. All results demonstrate that the LaNiO₃ thin films deposited by PAD have better comprehensive performance, indicating that PAD method has great potential for preparing epitaxial functional thin film materials.

Key words: LaNiO₃, conductive film, polymer assisted deposition, epitaxial

中图分类号:

TQ174

杨柱, 郭少波, 蔡恒辉, 董显林, 王根水. 高分子辅助沉积法制备LaNiO₃外延导电薄膜[J]. 无机材料学报, 2022, 37(5): 561-566.

YANG Zhu, GUO Shaobo, CAI Henghui, DONG Xianlin, WANG Genshui. Preparation of Epitaxial Metallic LaNiO₃ Thin Film by Polymer Assisted Deposition[J]. Journal of Inorganic Materials, 2022, 37(5): 561-566.

图/表 5

Fig. 1 Charaterization of as-prepared LNO film (a) HRXRD patterns of the LNO films; (b) Rocking-curve of the (002) LNO reflection; (c) φ-scans from (202) reflection of LNO and (202) of STO; (d) 3D AFM micrograph of LNO film; (e) Bright-field cross-sectional TEM image of LNO film on STO substrate; (f) Cross-sectional HRTEM image of the interface between LNO and STO

Fig. 2 In-situ XRD patterns of LNO film on STO substrate at different temperatures

Fig. 3 Survey (a), La3d (b), Ni2p (c) and O1s (d) XPS spectra of LaNiO3

Table 1 Summary of the parameters of LNO films grown by different methods

Method	Substrate	Orientation	d/nm	ρ_{300 K}/ (μΩ·cm)	Ref.
SCD	SrTiO₃	Preferred orientation	100	340	[31]
RF-MS	LaAlO₃	Epitaxial	9	~150	[28]
MBE	SrTiO₃	Epitaxial	36	~90	[29]
PLD	SrTiO₃	Epitaxial	50-60	100	[30]
PAD	SrTiO₃	Epitaxial	25	160	This work

Fig. 4 Temperature dependence of resistivity of 25 nm LNO film on STO substrate

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高分子辅助沉积法制备LaNiO₃外延导电薄膜

Preparation of Epitaxial Metallic LaNiO₃ Thin Film by Polymer Assisted Deposition

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