无机材料学报 ›› 2021, Vol. 36 ›› Issue (5): 535-540.DOI: 10.15541/jim20200211

• 研究快报 • 上一篇    下一篇

添加BaTiO3的热压烧结Si3N4陶瓷的力学和介电性能

梁汉琴(), 尹金伟, 左开慧, 夏咏锋, 姚冬旭, 曾宇平()   

  1. 中国科学院 上海硅酸盐研究所, 高性能陶瓷和超微结构国家重点实验室, 上海 200050
  • 收稿日期:2020-04-21 修回日期:2020-07-12 出版日期:2021-05-20 网络出版日期:2021-04-19
  • 通讯作者: 曾宇平, 研究员. E-mail: yuping_zeng@mail.sic.ac.cn
  • 作者简介:梁汉琴(1987-), 男, 副研究员. E-mail:hqliang@mail.sic.ac.cn

Mechanical and Dielectric Properties of Hot-pressed Si3N4 Ceramics with BaTiO3 Addition

LIANG Hanqin(), YIN Jinwei, ZUO Kaihui, XIA Yongfeng, YAO Dongxu, ZENG Yuping()   

  1. State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2020-04-21 Revised:2020-07-12 Published:2021-05-20 Online:2021-04-19
  • Contact: ZENG Yuping, professor.E-mail: yuping_zeng@mail.sic.ac.cn
  • About author:LIANG Hanqin(1987-), male, associate professor. E-mail:hqliang@mail.sic.ac.cn
  • Supported by:
    National Natural Science Foundation of China(51902327)

摘要:

本研究以Al2O3和Nd2O3为烧结助剂, 采用热压烧结法制备Si3N4陶瓷, 系统研究了添加BaTiO3对Si3N4陶瓷力学和介电性能的影响。研究结果表明, 随着BaTiO3含量的增加, 相对密度、抗弯强度和维氏硬度都随之降低, 而断裂韧性有所升高; 即使添加5wt%~20wt%的BaTiO3, Si3N4陶瓷的抗弯强度依然可以保持在600 MPa以上。Si3N4陶瓷的介电常数可以提高到9.26~11.50, 而介电损耗保持在10-3量级。在Si3N4陶瓷中未检测到BaTiO3结晶相, 可以认为Si3N4陶瓷介电常数的提高主要来源于烧结过程中形成的TiN。这些结果有助于拓展Si3N4陶瓷的应用领域。

关键词: 氮化硅, 断裂韧性, 抗弯强度, 介电常数, 热压烧结

Abstract:

Si3N4 ceramics with improved and tailorable dielectric constant are desirable for microwave dielectric substrate application in harsh environment. Effect of BaTiO3 addition on the mechanical and dielectric properties of the hot-pressed Si3N4 ceramics with Al2O3 and Nd2O3 as sintering additives were investigated. Relative density, flexural strength and Vickers’ hardness of Si3N4 ceramics all decreased, while indentation fracture toughness increased monotonically with the increase of BaTiO3 content. Flexural strength of Si3N4 ceramics was higher than 600 MPa and dielectric constant of Si3N4 ceramics increased to 9.26-11.50 when 5wt%-20wt% of BaTiO3 was added. The dielectric loss was at the level of 10-3. The improvement of dielectric constant was attributed to the formation of TiN during hot pressing, as crystalline BaTiO3 was not detected in the sintered samples. These findings can make a significant contribution to the new applications of Si3N4 ceramics.

Key words: Si3N4, fracture toughness, flexural strength, dielectric constant, hot pressing

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