SnO2退火温度对钙钛矿太阳能电池性能的影响

doi:10.15541/jim20190650

无机材料学报 ›› 2021, Vol. 36 ›› Issue (2): 168-174.DOI: 10.15541/jim20190650

所属专题：能源材料论文精选(2021)；【虚拟专辑】钙钛矿材料(2020~2021)；【虚拟专辑】太阳能电池(2020~2021)；【能源环境】钙钛矿；【能源环境】太阳能电池

SnO₂退火温度对钙钛矿太阳能电池性能的影响

王艳香(), 高培养, 范学运, 李家科, 郭平春, 黄丽群, 孙健

景德镇陶瓷大学材料科学与工程学院, 景德镇 333403

收稿日期:2019-12-25 修回日期:2020-06-17 出版日期:2021-02-20 网络出版日期:2020-07-10
作者简介:王艳香(1972-), 女, 教授. E-mail: yxwang72@163.com
基金资助:
国家科技合作专项(2013DFA51000);国家自然科学基金(51462015);江西省重点研发计划(20181BBE58004)

Effect of SnO₂ Annealing Temperature on the Performance of Perovskite Solar Cells

WANG Yanxiang(), GAO Peiyang, FAN Xueyun, LI Jiake, GUO Pingchun, HUANG Liqun, SUN Jian

College of Materials Science and Engineering, Jingdezheng Ceramic Institute, Jingdezheng 333403, China

Received:2019-12-25 Revised:2020-06-17 Published:2021-02-20 Online:2020-07-10
About author:WANG Yanxiang(1972-), female, professor. E-mail: yxwang72@163.com
Supported by:
National Science and Technology Cooperation Project(2013DFA51000);National Natural Science Foundation of China(51462015);Key Research and Development Plan of Jiangxi Province(20181BBE58004)

摘要/Abstract

摘要：

电子传输层是钙钛矿太阳能电池的关键部分, 起到阻挡空穴、传输电子和减少电子空穴复合的作用。本研究采用低温溶液法制备SnO₂薄膜作为钙钛矿电池的电子传输层, 研究SnO₂的退火温度对电子传输层微观形貌、物理性能以及钙钛矿太阳能电池性能的影响。结果表明: 当退火温度为60、90、120和240 ℃时, SnO₂薄膜表面存在较多的孔隙; 而退火温度为150、180和210 ℃时, 薄膜表面孔隙较少。在实验温度下, 制备的SnO₂薄膜为四方相, FTO玻璃上涂覆SnO₂薄膜后其透过率要优于空白FTO玻璃的透过率。当SnO₂退火温度为180 ℃时, 薄膜的电子迁移率最高, 钙钛矿电池具有最佳的传输电阻和复合电阻, 所得电池的性能最优, 其光电转换效率为17.28%, 开路电压为1.09 V, 短路电流为20.91 mA/cm², 填充因子为75.91%。

关键词: 钙钛矿太阳能电池, 电子传输层, SnO₂, 退火温度

Abstract:

Electron transport layer is a key part for perovskite solar cell (PSC), which can block holes and transmit electrons to reduce recombination. In this study, SnO₂ was synthesized with low-temperature solution-processed method and used as electronic transport layer for perovskite solar cells. The influence of annealing temperature on the properties of SnO₂ films and PSCs were systematically studied. The results showed that with the annealing temperatures at 60, 90, 120, 240 ℃, the surfaces of SnO₂ films own more pores; while annealed at 150, 180, 210 ℃, the corresponding surfaces show fewer pores. It was found that the transmittance of FTO glass covered with SnO₂ films is better than that of the bare FTO glass. With SnO₂ annealed at 180 ℃, the electron mobility of the thin film is the highest. The corresponding PSC possesses the best transmission resistance, composite resistance, and superior photovoltaic performance. The photoelectric conversion efficiency, the open-circuit voltage, the short-circuit current and the filling factor were 17.28%, 1.09 V, 20.91 mA/cm² and 75.91%, respectively.

Key words: perovskite solar cell, electronic transport layer, SnO₂, annealing temperature

中图分类号:

TQ174

王艳香, 高培养, 范学运, 李家科, 郭平春, 黄丽群, 孙健. SnO₂退火温度对钙钛矿太阳能电池性能的影响[J]. 无机材料学报, 2021, 36(2): 168-174.

WANG Yanxiang, GAO Peiyang, FAN Xueyun, LI Jiake, GUO Pingchun, HUANG Liqun, SUN Jian. Effect of SnO₂ Annealing Temperature on the Performance of Perovskite Solar Cells[J]. Journal of Inorganic Materials, 2021, 36(2): 168-174.

图/表 14

图1 FTO和不同退火温度制得的SnO2薄膜的FSEM照片

Fig. 1 FSEM images of FTO and SnO2 films annealed at different temperatures (a, j) Bare FTO; (b) 60 ℃; (c) 90 ℃; (d) 120 ℃; (e) 150 ℃; (f, i) 180 ℃; (g) 210 ℃; (h) 240 ℃

图 S1 不同退火温度制得的SnO2薄膜的AFM图像(20 μm×20 μm)

Fig. 8 AFM images of SnO2 films prepared at different annealing temperatures (20 μm×20 μm) (a) 60 ℃; (b) 90 ℃; (c) 120 ℃; (d) 150 ℃; (e) 180 ℃; (f) 210 ℃; (g) 240 ℃

图S2 不同退火温度下获得的SnO2薄膜的XRD图谱

Fig.9 XRD patterns of SnO2 films prepared at different annealing temperatures

图2 以FTO为基底180 ℃退火制得的SnO2薄膜的XPS图谱

Fig. 2 XPS spectra of SnO2 film annealed at 180 ℃ with FTO as substrate (a) Full survey; (b) Sn3d; (c) O1s; (d) Cl2p

图3 以FTO为基底不同退火温度下获得的SnO2薄膜的紫外-可见吸收光谱图(彩色曲线见电子版)

Fig. 3 UV-visible absorption spectra of SnO2 films annealed at different temperatures with FTO as substrate (Colourful curves are available on web)

表S1 不同退火温度下SnO2薄膜的带隙

Table 1 Bandgap of SnO2 films annealed at different temperatures

Temperature/℃	60	90	120	150	180	210	240
Band gap/eV	3.88	3.87	3.88	3.91	3.90	3.88	3.88

表1 以不同退火温度制得的SnO2薄膜为ETL的PSC的光电性能参数

Table 1 Photoelectric parameters of PSCs with SnO2 ETLs annealed at different temperatures

Temperature/℃	V_OC/V	J_SC/(mA∙cm^-2)	FF/%	PCE/%
60	0.87	18.85	40.75	6.72
90	0.90	19.15	55.70	9.60
120	0.97	19.56	71.67	13.60
150	1.06	19.65	74.36	15.48
180	1.09	20.91	75.91	17.28
210	1.06	19.27	73.32	14.91
240	0.99	19.23	70.75	13.43

图4 以180 ℃退火温度制得的SnO2薄膜为ETL的PSC的断面FSEM照片

Fig. 4 Cross-sectional FSEM image of PSC with SnO2 ETL annealed at 180 ℃

图5 以不同退火温度制得的SnO2薄膜为ETL的PSC的(a) J-V曲线, (b) PCE分布直方图, (c) IPCE曲线; (d) 以180 ℃退火温度制得的SnO2薄膜为ETL的PSC的IPCE及积分电流曲线(彩色曲线见电子版)

Fig. 5 (a) J-V curves, (b) PCE histograms, (c) IPCE spectra of PSCs prepared with SnO2 ETLs annealed at different temperatures; (d) IPCE and integral current curves of PSC with SnO2 ETL annealed at 180 ℃ (Colourful curves are available on web)

图6 以不同退火温度制得的SnO2为ETL的钙钛矿薄膜的光致发光图谱

Fig. 6 PL spectra of perovskite films prepared with SnO2 ETL annealed at different temperatures

图S3 退火温度为60和90 ℃制得的SnO2为ETL的钙钛矿薄膜的瞬态荧光光谱

Fig. 10 TRPL spectra of perovskite films prepared with SnO2 ETLs annealed at 60 and 90 ℃

图7 以不同退火温度制得的SnO2薄膜为ETL的PSC的电化学阻抗谱图

Fig. 7 Nyquist plots of PSCs prepared with SnO2 ETLs annealed at different temperatures

图S4 以不同退火温度制得的SnO2薄膜为ETL的PSC的(a)电化学阻抗谱局部放大图和(b)等效电路图

Fig. 11 (a) Zoom-in high-frequency region of Nyquist plot and (b) equivalent circuit for PSCs with SnO2 ETLs annealed at different temperatures

表2 以FTO为基底在不同退火温度下制得的SnO2薄膜的电学性能参数

Table 2 Electrical properties of SnO2 films annealed at different temperatures with FTO as substrate

Temperature/℃	Resistivity/ (×10^-4, Ω∙cm)	Carrier mobility/ (cm²∙V^-1·s^-1)
60	1.40	23.11
90	1.74	25.60
120	1.80	33.98
150	1.24	45.26
180	1.46	57.89
210	1.64	39.81
240	1.38	26.21

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SnO₂退火温度对钙钛矿太阳能电池性能的影响

Effect of SnO₂ Annealing Temperature on the Performance of Perovskite Solar Cells

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