无机材料学报 ›› 2019, Vol. 34 ›› Issue (12): 1279-1284.DOI: 10.15541/jim20190102

• 研究论文 • 上一篇    下一篇

氩离子刻蚀对TFA-MOD法YBa2Cu3O7-x薄膜性能的影响研究

罗志永,廖楚剑,蔡传兵,刘志勇,李敏娟,鲁玉明()   

  1. 上海大学 理学院, 物理系, 上海市高温超导重点实验室, 上海 200444
  • 收稿日期:2019-03-04 修回日期:2019-04-28 出版日期:2019-12-20 网络出版日期:2019-06-17
  • 作者简介:罗志永(1992-), 男, 硕士研究生. E-mail: 772520720@qq.com
  • 基金资助:
    国家重点研发计划(2016YFF0101701);上海市科学技术委员会(16521108400);上海市科学技术委员会(16DZ0504300);上海市科学技术委员会(14521102800);国家自然科学基金(51572165);国家自然科学基金(11174193)

Argon Ion Etching on Property of YBa2Cu3O7-x Thin Films Prepared by TFA-MOD Process

LUO Zhi-Yong,LIAO Chu-Jian,CAI Chuan-Bing,LIU Zhi-Yong,LI Min-Juan,LU Yu-Ming()   

  1. Shanghai High Temperature Superconducting Key Laboratory, Department of Physics, College of Science, Shanghai University, Shanghai 200444, China
  • Received:2019-03-04 Revised:2019-04-28 Published:2019-12-20 Online:2019-06-17
  • Supported by:
    National Key R&D Plan(2016YFF0101701);Shanghai Science and Technology Commission Funding(16521108400);Shanghai Science and Technology Commission Funding(16DZ0504300);Shanghai Science and Technology Commission Funding(14521102800);National Natural Science Foundation of China(51572165);National Natural Science Foundation of China(11174193)

摘要:

TFA-MOD工艺制备的YBa2Cu3O7-x(YBCO)薄膜有独特的生长机制, 高温晶化后的YBCO薄膜表面存在一层由Ba-Cu-O异质相及a轴生长的YBCO晶粒组成的杂质层。为了满足零电阻超导焊接和超导带材钎焊搭接的研究需要, 在不破坏超导特性和晶体结构的前提下, 采用Ar离子对TFA-MOD工艺制备的YBCO薄膜进行刻蚀, 对薄膜进行纳米级的减薄, 实现对薄膜表面杂质的去除。利用拉曼光谱、扫描电子显微镜和X射线衍射等方法对不同刻蚀时间下的薄膜状态进行表征。结果表明, 1.3 μm厚的YBCO薄膜表面杂质层厚度约为220 nm, 并且在过度刻蚀的情况下, YBCO薄膜仍然是c轴取向, 晶体结构没有被破坏。刻蚀后,薄膜内部氧空位缺陷的产生会造成超导转变及载流性能的降低, 但通过吸氧处理后薄膜性能可恢复。

关键词: YBCO薄膜, 杂质, 刻蚀, 超导性能

Abstract:

An impurity layer composed by Ba-Cu-O heterogeneous phase and a-axis YBCO crystal grains exists on the surface of the YBCO film after high-temperature crystallization, due to the unique growth mechanism of the YBCO film prepared by the TFA-MOD method. For the research of zero resistance superconducting welding and conventional resistance welding, we etched the YBCO film with Ar ion, decreasing the thickness of the film and removing the impurity layer without destroying the superconductivity and crystal structure. The Raman spectroscopy and scanning electron microscopy were used to research the states of the film with difference etching time. The results showed that the surface impurity layer of the 1.3 μm YBCO film was about 220 nm. The YBCO film was still crystal and c-axis oriented, though over etching. After etching, the oxygen vacancy defects in the film increased, causing the decrease of superconducting transition and current carrying performance. It can be solved by oxygen-absorbing treatment.

Key words: YBCO film, impurity, etching, superconducting property

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