无催化剂碳热还原法制备SiC@SiO2纳米电缆

doi:10.15541/jim20190028

摘要/Abstract

摘要：

SiC@SiO₂纳米电缆作为一种新型的功能性纳米复合材料, 以其优异的性能和广泛的应用前景受到了广泛关注。因此,开发一种有效、经济、方便, SiC@SiO₂纳米电缆的制备方法具有重要意义。本研究采用无催化剂的碳热还原法在1500 ℃的Ar气氛下, 通过加热硅粉和硅溶胶混合物从而快速高效地制备了SiC@SiO₂纳米电缆。该核壳的纳米电缆是由单晶β-SiC核心和无定形SiO₂壳组成, 其长度达几百微米, 直径为60~80 nm, 而且通过调节保温时间可以调控核壳的尺寸。结合实验数据并依据气-固(VS)机理解释了SiC@SiO₂纳米电缆的形成过程, 同时也进一步丰富了该生长机制, 为其工业化生产提供了参考。

关键词: 碳化硅, 纳米电缆, 碳热还原, 无催化剂

Abstract:

SiC@SiO₂ nanocables (NC), as a new functional nanocomposite, have captured widespread attention due to their excellent performances and widely application prospects. Therefore, it is significant to develop a kind of effective, economical and environmental method to prepare SiC@SiO₂ NC. Herein, a catalyst free carbothermal reduction method was developed to synthesize SiC@SiO₂ NC fast and efficently, through heating the mixture of silicon powder and silica sol at 1500 ℃ in Ar. The NC is composed of single-crystal β-SiC core and amorphous SiO₂ sheath, with the length of hundreds of micrometers and the diameter of 60-80 nm. And the size of the core-shell can be adjusted by the holding time. The formation of the NC is explained based on the experimental data and the vapor-solid (VS) mechanism. The experiment results can also enrich the mechanism, and offer inspiration for their industrial-scale production.

Key words: SiC, nanocables, carbothermal reduction, catalyst-free

中图分类号:

TQ174

田兆波, 陈克新, 孙思源, 张杰, 崔巍, 刘光华. 无催化剂碳热还原法制备SiC@SiO₂纳米电缆[J]. 无机材料学报, 2019, 34(11): 1217-1221.

TIAN Zhao-Bo, CHEN Ke-Xin, SUN Si-Yuan, ZHANG Jie, CUI Wei, LIU Guang-Hua. Synthesis of SiC@SiO₂ Nanocables via a Catalyst-free Carbothermal Reduction Method[J]. Journal of Inorganic Materials, 2019, 34(11): 1217-1221.

图/表 6

Fig. 1 SEM images of core-shell SiC@SiO2 NC (a) Low-magnification image, with inset showing distribution of the SiC@SiO2 NC diameters; (b) High-magnification image, with inset showing the corresponding image of a single NC

Fig. 2 Typical XRD pattern obtained from the core-shell SiC@SiO2 NC

Fig. 3 TEM images of the core-shell SiC@SiO2 NC kept in 1500 ℃ for 4 (a) and 6 h (b), the corresponding SAED (c), and HRTEM image (d)

Fig. 4 Mapping mode of the EDS of the elements, Si/C/O in the NC

Fig. 5 Raman scattering spectrum of SiC@SiO2 core-shell NC

Fig. 6 Schematic illustration of the growth and morphology evolution of the SiC-SiO2 NC

参考文献 29

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无催化剂碳热还原法制备SiC@SiO₂纳米电缆

Synthesis of SiC@SiO₂ Nanocables via a Catalyst-free Carbothermal Reduction Method

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