基于单根TaON纳米带的光晶体管与紫外到近红外响应

doi:10.15541/jim20180584

摘要/Abstract

摘要：

用Ta₂O₅ 纳米带模板转化法控制合成TaON纳米带, 典型的纳米带长约0.5 cm, 横截面积40 nm×200 nm~ 400 nm×5600 nm。在SiO₂/Si基片上加工出TaON单根纳米带的场效应晶体管; 该晶体管的电子迁移率和开关比分别为9.53×10 ^-4cm ²/(V·s)和3.4, 在254~850 nm范围内显示良好的光响应。在405 nm (42 mW/cm ²)的光照下, 外加5.0 V的偏压时, 光响应为249 mA/W, 光开关比为11。因此, 该器件具有良好的光探测性, TaON纳米带可作为光电子器件的候选材料。另外, 实验还控制合成出Ta₂O₅@TaON纳米带, 并加工成单根纳米带的场效应晶体管, 虽然相同光照条件下的光响应弱于TaON 纳米带, 但仍算是一种好的光电材料。

关键词: TaON纳米带, 模板合成, 场效应晶体管, 光探测器

Abstract:

TaON nanobelts (NBs) were controllably synthesized by Ta₂O₅ NBs template-conversion method. The typical NBs have cross-sections of 40 nm×200 nm-400 nm×5600 nm, and lengths up to about 0.5 cm. A field effect transistor (FET) based on single TaON NB was fabricated on SiO₂/Si substrate. The electronic mobility and on-off ratio of the nanobelts are 9.53×10 ^-4cm ²/(V·s) and 3.4, respectively. The FET shows good photoresponses from 254 nm to 850 nm. Under irradiation of 405 nm light (42 mW/cm ²), the responsivity is 249 mA/W at a bias of 5.0 V, and the photoswitch current ratio is 11. Therefore, the phototransistor shows a good photodetectivity, and TaON NBs may become good candidates for fabricating optoelectronic devices. Additionally, Ta₂O₅@TaON composite NBs were also synthesized, and a FET based on the single NB was fabricated. Under irradiation of the same light, its photoresponse is weaker than TaON NB, but it is still a good optoelectronic material.

Key words: TaON nanobelt, template synthesis, field effect transistor, photodetector

中图分类号:

TQ174

陶友荣,陈晋强,吴兴才. 基于单根TaON纳米带的光晶体管与紫外到近红外响应[J]. 无机材料学报, 2019, 34(9): 1004-1010.

TAO You-Rong,CHEN Jin-Qiang,WU Xing-Cai. Phototransistor Based on Single TaON Nanobelt and Its Photoresponse from Ultraviolet to Near-infrared[J]. Journal of Inorganic Materials, 2019, 34(9): 1004-1010.

图/表 6

Fig. 1 (a) XRD pattern, (b) low-magnification SEM image (inset: light photograph), and (c) high-magnification SEM image of TaON nanobelts; (d) TEM image of a single TaON nanobelt with inset in the middle showing corresponding HRTEM image, and inset on the upper right corner showing FFT pattern of HRTEM image

Fig. 2 (a) XRD pattern (a peak with star representing Ta2O5, and the rest peaks representing TaON), (b) low-magnification SEM image (inset: light photograph), and (c) TEM image of Ta2O5@TaON composite nanobelts; (d) TEM image of a single Ta2O5@TaON nanobelt; (e, f) HRTEM images of square A and B in (d), respectively with insets showing FFT patterns of corresponding HRTEM images

Fig. 3 (a) Scheme of FET based on a single TaON nanobelt; (b) Overlooked AFM image of the FET with inset showing size profile of the nanobelt; (c) Ids-Vds plots at different Vg; (d) Ids-Vg plot at Vds= 1 V

Fig. 4 (a) Photograph of a single TaON nanobelt FET, (b) I-V characteristics of the FET illuminated and unilluminated with different wavelength light, (c) responsivities of the FET to different wavelengths with inset showing UV-Vis absorption spectrum of TaON NBs, (d, f) transient photoresponses of the FET illuminated by 405 nm (42 mW/cm2) light pulse chopped with a photoswitch period of 1 and 50 s at bias of 5 V and (e) local magnification of (d) from 3.2 s to 5.6 s

Fig. 5 (a) Photography of FET based on a single Ta2O5@TaON nanobelt, (b) photoresponsivities of the FET to different wavelengths with inset showing UV-Vis absorption spectrum of Ta2O5@TaON NBs, (c) I-V characteristics of the FET unilluminated illuminated with different wavelength light, and (d) transient responses of the FET illuminated with a 405 nm (42 mW/cm2) light pulse chopped with a photoswitch period of 50 s at a bias voltage of 5 V

Table 1 Comparision of TaON NB photodetector with others reported

Photodetector	Wavelength/Power	Bias voltage/V	R_l/(A·W^-1)	Photoswitch current ratio	Rise time/ Decay time	Ref.
CdTe NB	400 nm/637 mW·cm^-2	10	12	1.1	~1.1s/~3.3 s	[27]
Single-layer MoS₂	550 nm/80 mW	1	4.2′10^-4		<0.05 s	[28]
GaS NB	490 nm/0.5 mW·cm^-2	2	2.3′10^-3		<0.03 s	[29]
ZrS₃NB	405 nm/10.5 mW·cm^-2	5	3.9	13	<0.4 s	[6]
Ta₃N₅ NB	450 nm/2.8 mW·cm^-2	2	99.6	~1.5	~45 ms/40 ms	[24]
TaON NB	405 nm/ 42 mW·cm^-2	5	0.249	11	<0.2 s	This work
Ta₂O₅@TaON NB	405 nm/ 42 mW·cm^-2	5	3.9×10^-3	2	<0.2 s	This work

参考文献 29

[1]	GLUSCHKE J G, SEIDL J, BURKE A M , , et al. Achieving short high-quality gate-all-around structures for horizontal nanowire fieldeffect transistors. Nanotechnology, 2019, 30(6): 064001-1-7.
[2]	LIANG J R, ZHAO Y R, ZHU K L ,et al. Synthesis and room temperature NO₂ gas sensitivity of vanadium dioxide nanowire structures by chemical vapor deposition. The Solid Films, 2019,669:537-543.
[3]	ZHANG Y L, WU X C, TAO Y R , et al. Fabrication and field-emission performance of zirconium disulfide nanobelt arrays. Chemical Communications, 2008(23):2683-2685.
[4]	WU X C, HONG J M, TAO Y R ,et al. Controlled growth and field-emission properties of NbSe₂ micro/nanostructured films. Journal of Nanoscience and Nanotechnoloy, 2010,10(10):6465-6472.
[5]	TAO Y R, WU X C, XIONG W W . Flexible visible-light photodetectors with broad photoresponse based on ZrS₃ nanobelt films. Small, 2014,10(23):4905-4911.
[6]	TAO Y R, WU J J, WU X C . Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts. Nanoscale, 2015,7(34):14292-14298.
[7]	TIAN W, ZHANG C, ZHAI T Y ,et al. Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms. Advanced Materials, 2014,26(19):3088-3093.
[8]	VETTORI M, PIAZZA V, CATTONI A , , et al. Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon. Nanotechnology, 2019, 30(8): 08400-1-15.
[9]	GU S S, LOU Z, MA X D ,et al. CuCo₂O₄ nanowires grown on a Ni wire for high-performance flexible fiber supercapacitors. ChemElectroChem, 2015,2(7):1042-1047.
[10]	PENG L, HU L F, FANG X S . Low-dimensional nanostructure ultraviolet photodetectors. Advanced Materials, 2013,25(37):5321-5328.
[11]	GONG X, TONG M H, XIA Y J ,et al. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm. Science, 2009,325(5948):1665-1667.
[12]	BORUAH B D, MUKHERJEE A, MISRA A . Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector. Nanotechnology, 2016, 27(9): 095206-1-11.
[13]	ZHAO Y M, FENG S L, JIANG H T ,et al. Catalyst-free growth of a Zn₂GeO₄ nanowire network for high-performance transfer-free solar-blind deep UV detection. Physica E-Low-Dimensional Systems Nanostructures, 2019,107:1-4.
[14]	GERTMAN R, HARUSH A, VISOLY-FISHER I . Nanostructured photocathodes for infrared photodetectors and photovoltaics. Journal of Physical Chemistry C, 2015,119(4):1683-1689.
[15]	WU J J, TAO Y R, WU Y ,et al. Ultrathin SnS₂ nanosheets of ultrasonic synthesis and their photoresponses from ultraviolet to near-infrared. Sensor and Actuators B-Chemical, 2016,231:211-217.
[16]	HAFEEZ M, GAN L, LI H Q ,et al. Large-area bilayer ReS₂ film/multilayer ReS₂ flakes synthesized by chemical vapor deposition for high performance photodetectors. Advanced Functional Materials, 2016,26(25):4551-4560.
[17]	XIONG W W, CHEN J Q, WU X C ,et al. Visible light detectors based on individual ZrSe₃ and HfSe₃ nanobelts. Journal of Materials Chemistry C, 2015,3(9):1929-1934.
[18]	TAO Y R, CHENJ Q, WU J J , et al. Flexible ultraviolet-visible photodetector based on HfS₃ nanobelt film. Journal of Alloys and Compounds, 2016,658:6-11.
[19]	CHUN W J, ISHIKAWA A, FUJISAWA H ,et al. Conduction and valence band positions of Ta₂O₅, TaON, and Ta₃N₅ by UPS and electrochemical methods. Journal of Physical Chemistry B, 2003,107(8):1798-1803.
[20]	BERTAUX S, REYNDERS P, HEINTZ J M ,et al. New (oxy) nitride pearlescent pigments. Materials Science Engineering B, 2005,121(1/2):137-144.
[21]	CHEN S S, QI Y, HISATOMI T ,et al. Efficient visible-light-driven Z-scheme overall water splitting using a MgTa₂O₆-_xN_y/TaON heterostructure photocatalyst for H₂ evolution. Angewandte Chemie International Edition, 2015,54(29):8498-8501.
[22]	ITO S, THAMPI K P, COMTE P , et al. Highly active meso- microporous TaON photocatalyst driven by visible light. Chemical Communications, 2005(2):268-270.
[23]	NAKAMURA R, TANAKA T, NAKATO Y . Oxygen photoevolution on a tantalum oxynitride photocatalyst under visible-light irradiation: how does water photooxidation proceed on a metal- oxynitride surface? Journal of Physical Chemistry B, 2005,109(18):8920-8927.
[24]	WU X C, TAO Y R, LI L ,et al. Centimeter-long Ta₃N₅ nanobelts: synthesis, electrical transport, and photoconductive properties. Nanotechnology, 2013,24(17):175701.
[25]	WU X C, TAO Y R, GAO Q X , et al. Superconducting TaS₂-_xI_y hierarchical nanostructures. Chemical Communications, 2009(28):4290-4292.
[26]	WU X C, TAO Y R, GAO Q X . Fabrication of TaS₂ nanobelt arrays and their enhanced field-emission. Chemical Communications, 2009(40):6008-6010.
[27]	XIE X, KWOK S Y, LU Z Z ,et al. Visible-NIR photodetectors based on CdTe nanoribbons. Nanoscale, 2012,4(9):2914-2919.
[28]	YIN Z Y, LI H, LI H ,et al. Single-layer MoS₂ phototransistors. ACS Nano, 2012,6(1):74-80.
[29]	HU P A, WANG L F, YOON M ,et al. Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Letters, 2013,13(4):1649-1654.