无机材料学报 ›› 2019, Vol. 34 ›› Issue (3): 294-300.DOI: 10.15541/jim20180303

• 研究论文 • 上一篇    下一篇

异层等价离子双掺杂策略优化BiCuSeO的热电性能

李周1, 肖翀2   

  1. 中国科学技术大学 1. 化学与材料科学学院;
    2. 微尺度物质科学国家研究中心, 合肥 230026
  • 收稿日期:2018-07-04 修回日期:2018-11-28 出版日期:2019-03-20 网络出版日期:2019-02-26
  • 作者简介:李 周(1990-), 男, 博士. E-mail: liz1990@ustc.edu.cn
  • 基金资助:
    中国博士后科学基金(2017M620261);博士后创新人才支持计划(BX201700217);中央高校基本科研业务费专项资金(WK2060190090);国家自然科学基金(21622107, 21805269)

Optimizing Electrical and Thermal Transport Property in BiCuSeO Superlattice via Heterolayer-isovalent Dual-doping Approach

LI Zhou1, XIAO Chong2   

  1. 1. School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China;
    2. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;
  • Received:2018-07-04 Revised:2018-11-28 Published:2019-03-20 Online:2019-02-26
  • Supported by:
    Project funded by China Postdoctoral Science Foundation (2017M620261);National Postdoctoral Program for Innovative Talents (BX201700217);The Fundamental Research Funds for the Central Universities (WK2060190090);National Natural Science Foundation of China (21622107, 21805269)

摘要:

选取BiCuSeO双亚层超晶格热电材料为研究对象, 通过La、Ag单掺杂和双掺杂两种方式等价取代[Bi2O2]2+亚层和[Cu2Se2]2-亚层中的Bi、Cu位点, 并对其热电输运性能和缺陷调控机理进行研究, 结果发现:La-Ag双掺杂可以结合两种单掺杂的优势, 在适度提升载流子浓度的同时保持与纯样相当的载流子迁移率, 从而使电导率得到大幅度的提升。与此同时, La-Ag双掺杂可以引发能带收敛效应, 有助于同步获得较高的载流子迁移率和Seebeck系数, 最终使PF得到了优化; 另一方面, 由于点缺陷对载热声子的强烈散射作用, 样品的晶格热导率和总热导率进一步降低, 使最终ZT值也得到了优化。结果, La-Ag双掺杂样品的ZT值在755 K下达到0.46, 高于原始纯样(ZT=0.27)和单掺杂样品。该项研究表明La、Ag异层等价双掺杂策略可以实现BiCuSeO热电输运参数的协同调控与优化。

 

关键词: 异层双掺杂, BiCuSeO, 热电性能, 电热输运, 协同调控

Abstract:

Taking the dual-sublayer BiCuSeO superlattice thermoelectric material as an object, equivalent mono- and dual-doped samples were prepared by substitution of Bi and Cu atoms in the corresponding [Bi2O2]2+ sublayer and [Cu2Se2]2- sublayer with isovalent La and Ag atoms. Their thermoelectric properties and the defect modulation mechanism were studied. The results showed that La-Ag dual-doped sample could combine the advantages of mono-doped samples to achieve an relative high carrier mobility while moderately increasing the carrier concentration, thereby maximizing the electrical conductivity. At the same time, it can also induce a potential band convergenceeffect, achieving the low average band effective mass and high density of states effective mass at the same time, which finally endowed Bi0.98La0.02Cu0.98Ag0.02SeO with simultaneous high carrier mobility and Seebeck coefficient, as well as the optimized power factor (PF=σS2). On the other hand, due to the strong point defect scattering on the heat-carrying phonons, the lattice and total thermal conductivities of these isovalent doped samples were further reduced, which finally optimized the figure of merit (ZT). As a result, a high ZT value of 0.46 was achieved at 755K in the La-Ag dual-doped sample, which was superior to that of the pristine sample (0.27 at 755 K) as well as the mono-doped counterparts. Present work demonstrates that heterolayer-isovalent dual-doping with La/Ag equivalent atoms in BiCuSeO can synergistically modulate its thermoelectric transport parameters with significantly improved thermoelectric performance.

Key words: heterolayer dual-doping, BiCuSeO, thermoelectric property, electrical-thermal transport, synergistic modulation

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