p型氧化镍薄膜晶体管的微流控法制备研究

doi:10.15541/jim20180167

无机材料学报 ›› 2019, Vol. 34 ›› Issue (1): 79-84.DOI: 10.15541/jim20180167

所属专题： MAX相和MXene材料

p型氧化镍薄膜晶体管的微流控法制备研究

梁玉^1,2, 梁凌燕¹, 吴卫华¹, 裴郁¹, 姚志强², 曹鸿涛¹

1. 中国科学院宁波材料技术与工程研究所, 浙江省石墨烯应用研究重点实验室, 宁波 315201;
2. 郑州大学材料科学与工程学院, 国家低碳环保材料智能设计国际联合研究中心, 郑州 450001

收稿日期:2018-04-16 修回日期:2018-07-17 出版日期:2019-01-21 网络出版日期:2018-12-17
作者简介:梁玉(1993-),女,硕士研究生. E-mail: 292707377@qq.com
基金资助:
国家自然科学基金(51772276);宁波市科技创新团队(2016B100005);National Natural Science Foundation of China (51772276);Ningbo Municipal Science and Technology Innovative Research Team (2016B100005)

Microfluidic-method-processed p-type NiO_x Thin-film Transistors

LIANG Yu^1,2, LIANG Ling-Yan¹, WU Wei-Hua¹, PEI Yu¹, YAO Zhi-Qiang², CAO Hong-Tao¹

1. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
2. State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials (ICDLCEM), School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China

Received:2018-04-16 Revised:2018-07-17 Published:2019-01-21 Online:2018-12-17
About author:LIANG Yu. E-mail: 292707377@qq.com

摘要/Abstract

摘要：

可以图形化和沉积同时进行的镀膜技术可有效简化器件制备流程, 从而降低成本。本工作研究了一种新型的图形化沉积镀膜技术-微流控法: 将宽度及间隔均为80 μm、沟槽深度为2 μm左右的PDMS模板与衬底贴合构筑微流通道, 毛细力作用下前驱液可在微流通道内流动, 并在衬底表面形成图形化的液膜, 最后经热处理完成图行化的薄膜沉积。此外, 分析了硝酸镍/2-甲氧基乙醇前驱体的热分解过程和不同温度退火下前驱体粉末的相结构演化规律。最终利用微流控法图形化沉积技术制备了图形化的氧化镍沟道, 并构筑了薄膜晶体管器件。优化后的薄膜晶体管表现出典型的p型特征, 场效应迁移率可达0.8 cm²·V^-1·s^-1。

关键词: 氧化物半导体, 溶液法, 浸润性, 薄膜晶体管, 热失重-差热曲线

Abstract:

It’s essential to develop patterning deposition methods to simplify the process of device fabrication and then reduce the production cost. In this work, a new patterning deposition method, i.e. microfluidic method, was demonstrated in details. In this technology, a micro-fluidic channel with a width of 80 μm and a height of 2 μm can be constructed between PDMS modules and substrates, and under capillary force precursor drops will move through the channel to form a patterned liquid film which is then fixed on the substrate via thermal treatments, and finally patterned films are prepared. In addition, the thermal-driven solidification process from NiO_x precursor powder to oxide was investigated through thermogravimetric/differential thermal analysis (TG-DTA) measurement. And the evolution of phase structure of the NiO_x precursor powder was analyzed with respect to post-annealing temperatures. Finally, thin-film transistors were fabricated applying the patterned NiO_x thin films as channels, and the optimized device showed typical p-type transistor features, with a field-effect mobility up to 0.8 cm²·V^-1·s^-1.

Key words: oxide semiconductors, solution method, wettability, thin-film transistors, TG-DTA curves

中图分类号:

TN321
TB43

梁玉, 梁凌燕, 吴卫华, 裴郁, 姚志强, 曹鸿涛. p型氧化镍薄膜晶体管的微流控法制备研究[J]. 无机材料学报, 2019, 34(1): 79-84.

LIANG Yu, LIANG Ling-Yan, WU Wei-Hua, PEI Yu, YAO Zhi-Qiang, CAO Hong-Tao. Microfluidic-method-processed p-type NiO_x Thin-film Transistors[J]. Journal of Inorganic Materials, 2019, 34(1): 79-84.

图/表 6

图1 PDMS模板制备过程

Fig. 1 Illustration of the preparation process of PDMS moulds

图2 微流控法实现薄膜图形化的操作流程图

Fig. 2 Illustration of the patterning process by capillary method

图3 NiO前驱体粉末的热失重-差热曲线

Fig. 3 Thermogravimetric and differential thermal analysis (TG-DTA) curves of NiO precursor

图4 NiO粉末的XRD图谱

Fig. 4 XRD patterns of NiO powders

图5 (a)制备的图形化 NiOx 条形膜的光学显微镜照片, 右上角插图为放大照片; (b)用原子力显微镜方法测得的条形膜边缘高度差曲线

Fig. 5 (a) Optical microscope image of a substrate patterned with NiO stripes with inset showing a close-up view; (b) Height fluctuation across the NiO stripe margin obtained by atomic force microscopy

图6 所制备TFT的截面结构示意图(a), 300℃(b)和350℃(c)退火TFT的输出曲线以及对应TFT的转移曲线(d)

Fig. 6 Schematic structure of the fabricated TFT device (a), output curves of the TFTs annealed at 300℃ (b) and 350℃ (c), and transfer curves of the corresponding TFTs (d)

参考文献 21

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p型氧化镍薄膜晶体管的微流控法制备研究

Microfluidic-method-processed p-type NiO_x Thin-film Transistors

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p型氧化镍薄膜晶体管的微流控法制备研究

Microfluidic-method-processed p-type NiOx Thin-film Transistors

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Microfluidic-method-processed p-type NiO_x Thin-film Transistors