Ce:YAG荧光陶瓷掺杂Gd对白光LED发光性能的影响

doi:10.15541/jim20170616

无机材料学报 ›› 2018, Vol. 33 ›› Issue (10): 1119-1123.DOI: 10.15541/jim20170616

Ce:YAG荧光陶瓷掺杂Gd对白光LED发光性能的影响

邵秀晨^1,2,3, 周圣明¹, 唐燕如^1,2, 易学专¹, 郝德明^1,2, 陈杰^1,2,3

1.中国科学院上海光学精密机械研究所强激光材料重点实验室, 上海 201800;
2.中国科学院大学, 北京 100049;
3.上海科技大学, 上海 201200

收稿日期:2017-12-28 修回日期:2018-03-26 出版日期:2018-10-20 网络出版日期:2018-09-25
作者简介:邵秀晨(1991-), 男, 硕士研究生. E-mail: shaoxch@shanghaitech.edu.cn
基金资助:
国家自然科学基金(61475172);中国科学院国际合作局重点项目(181231KYSB20160005)

Luminescence Characteristics of Ce: YAG Ceramic Phosphors with Gd³⁺ Doping for White Light-emitting Diodes

SHAO Xiu-Chen^1,2,3, ZHOU Sheng-Ming¹, TANG Yan-Ru^1,2, YI Xue-Zhuan¹, HAO De-Ming^1,2, CHEN Jie^1,2,3

1.Key laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. ShanghaiTech University, Shanghai 201210, China

Received:2017-12-28 Revised:2018-03-26 Published:2018-10-20 Online:2018-09-25
About author:SHAO Xiu-Chen. E-mail: shaoxch@shanghaitech.edu.cn
Supported by:
National Natural Science Foundation of China (61475172);External Cooperation Program of Chinese Academy of Sciences (181231KYSB20160005)

摘要/Abstract

摘要：

Ce: YAG荧光陶瓷具有突出的导热性及化学稳定性, 相比有机硅胶封装法在高功率白光LED的应用上具有更广阔的应用前景。本研究采用真空固相烧结法制备了不同Gd掺杂浓度的(Gd, Y)₃Al₅O₁₂:Ce样品, 通过XRD, SEM及荧光光谱等表征手段, 研究了Gd掺杂对Ce:YAG荧光陶瓷的晶体结构及其用于白光LED时对发光性能的影响。实验表明, 随着Gd掺杂浓度的提高, Gd³⁺取代Y³⁺ 的位置进入晶格, 使得样品的晶格常数增加。Gd³⁺还影响了Ce³⁺对蓝光的吸收, 同时Ce³⁺将蓝光转换成黄光的效率也下降, 导致光效从81.45 lm/W降低至63.70 lm/W。Gd的掺杂使Ce³⁺的光致发光谱峰位从534 nm向564 nm红移, 显色指数从61.3提升至70.2。Gd的掺杂虽然降低了发光效率, 但显著提高了(Gd, Y)₃Al₅O₁₂:Ce样品的显色指数, 使得黄色YAG荧光陶瓷应用于白光LED的性能得到了提高。

关键词: Ce:YAG, 荧光陶瓷, 白光LED, 显色指数

Abstract:

Ce:YAG ceramic phosphor has outstanding thermal conductivity and chemical stability for application in white light-emitting diodes (WLEDs), thus has a broader application than organic packaging in high-power WLEDs. (Gd,Y)₃Al₅O₁₂:Ce ceramic phosphors of varying Gd³⁺ concentrations were fabricated through solid-state reactive sintering method. Through X-ray diffraction, scanning electron microscopy, and fluorescence spectroscopy, the crystal structures, influence of the Gd concentration on fluorescence spectra of Ce:YAG, and luminescence properties of WLEDs with (Gd,Y) ₃Al₅O₁₂:Ce ceramic phosphors were investigated. As Gd content increased, the Gd³⁺ replaced the lattice position of Y³⁺ into the lattice. The absorption of blue light and relative photoluminescence (PL) intensity of the (Gd,Y)₃Al₅O₁₂:Ce ceramic phosphors decreased as Gd content increased, leading to a reduction in the luminous efficacy from 81.45l m/W to 63.70l m/W. Moreover, the PL emission bands of (Gd,Y)₃Al₅O₁₂:Ce exhibited redshift from 534 nm toward 564 nm and resulted in increase of the color, rendering index from 61.3 to 70.2. Although doping of Gd decreases the luminous efficacy, the color rendering index of the (Gd,Y)₃Al₅O₁₂:Ce sample is significantly increased, and the performance of the yellow YAG ceramic phosphor applied to the white LED is improved.

Key words: Ce: YAG, ceramic phosphor, WLED, CRI

中图分类号:

TQ174

邵秀晨, 周圣明, 唐燕如, 易学专, 郝德明, 陈杰. Ce:YAG荧光陶瓷掺杂Gd对白光LED发光性能的影响[J]. 无机材料学报, 2018, 33(10): 1119-1123.

SHAO Xiu-Chen, ZHOU Sheng-Ming, TANG Yan-Ru, YI Xue-Zhuan, HAO De-Ming, CHEN Jie. Luminescence Characteristics of Ce: YAG Ceramic Phosphors with Gd³⁺ Doping for White Light-emitting Diodes[J]. Journal of Inorganic Materials, 2018, 33(10): 1119-1123.

图/表 9

表1 Ce:YAG荧光陶瓷掺杂Gd的百分比

Table 1 Percentage of Gd concentration in Ce:Gd:YAG

Sample	D1	D2	D3	D4
x	5at%	10at%	15at%	20at%

图1 不同Gd掺杂浓度样品的XRD图谱

Fig. 1 XRD patterns of samples with different Gd3+ concentrations

表2 不同Gd掺杂浓度样品的晶格常数

Table 2 Lattice constants for samples with different Gd3+ contents

Gd content	Lattice constants/nm	E_sd/nm	V/nm³
5at%	1.198348	0.0002516	1.72087
10at%	1.200020	0.0001368	1.72809
15at%	1.200285	0.0002189	1.72923
20at%	1.200379	0.0001519	1.72964

图2 Ce:Ge:YAG荧光陶瓷样品的SEM照片

Fig. 2 SEM images of the Ce:Gd:YAG ceramic phosphor plates

图3 Ce:Gd:YAG荧光陶瓷在250~525 nm波段的吸收光谱

Fig. 3 Absorption spectra of the Ce:Gd:YAG phosphor ceramics in 250 nm-525 nm region

图4 Ce:Gd:YAG荧光陶瓷的光致发光谱

Fig. 4 PL spectra of the Ce:Gd:YAG phosphor ceramics

图5 具有不同厚度的Ce:Gd:YAG荧光陶瓷的光致发光谱

Fig. 5 PL spectra of the Ce:Gd:YAG phosphor ceramics with different thicknesses

表3 样品的晶胞个数

Table 3 Crystal cell quantity of the samples

Sample	D1	D1	D1	D4	D4	D4
Thickness/mm	0.2	0.3	0.4	0.2	0.24	0.3
Cell number	1668964	2503446	3337928	1666140	1999369	2499211

图6 样品在蓝光芯片激发下的光效及显色指数与Gd掺杂浓度的关系

Fig. 6 Luminous efficacy and Ra as a function of the Gd3+ content for samples under blue light chip excitation

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Ce:YAG荧光陶瓷掺杂Gd对白光LED发光性能的影响

Luminescence Characteristics of Ce: YAG Ceramic Phosphors with Gd³⁺ Doping for White Light-emitting Diodes

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Ce:YAG荧光陶瓷掺杂Gd对白光LED发光性能的影响

Luminescence Characteristics of Ce: YAG Ceramic Phosphors with Gd3+ Doping for White Light-emitting Diodes

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Luminescence Characteristics of Ce: YAG Ceramic Phosphors with Gd³⁺ Doping for White Light-emitting Diodes