质子辐照对Yb掺杂ZnO稀磁半导体薄膜缺陷与磁性的影响

doi:10.15541/jim20170420

无机材料学报 ›› 2018, Vol. 33 ›› Issue (8): 903-908.DOI: 10.15541/jim20170420

质子辐照对Yb掺杂ZnO稀磁半导体薄膜缺陷与磁性的影响

陈卫宾^{1, 2}, 刘学超¹, 卓世异¹, 柴骏^{1, 2}, 施尔畏¹

1. 中国科学院上海硅酸盐研究所, 上海200050;
2. 中国科学院大学, 北京100049

收稿日期:2017-08-30 修回日期:2017-12-16 出版日期:2018-08-28 网络出版日期:2018-07-17
作者简介:陈卫宾(1989-), 男, 博士研究生. E-mail: chenweibin@student.sic.ac.cn
基金资助:
国家自然科学基金青年基金(51602331);国家重点研发计划项目(2016YFB0400401, 2017YFB0405700)

Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films

CHEN Wei-Bin^{1, 2}, LIU Xue-Chao¹, ZHUO Shi-Yi¹, CHAI Jun^{1, 2}, SHI Er-Wei¹

1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2017-08-30 Revised:2017-12-16 Published:2018-08-28 Online:2018-07-17
About author:CHEN Wei-Bin. E-mail: chenweibin@student.sic.ac.cn
Supported by:
National Natural Science Foundation of China (51602331);National Key Research and Development Program of China (2016YFB0400401, 2017YFB0405700)

摘要/Abstract

摘要：

采用电感耦合等离子体增强物理气相沉积法制备了Yb掺杂ZnO薄膜, 并采用不同剂量质子对薄膜进行了辐照实验, 重点采用X射线衍射、光电子能谱、正电子湮灭图谱和磁测量系统对Zn_0.985Yb_0.015O薄膜的缺陷和磁性能进行了研究。磁性测试结果表明: Zn_0.985Yb_0.015O薄膜经质子辐照后其饱和磁化强度随辐照剂量的增加逐渐增大, 当辐照剂量为6 × 10¹⁵ ions/cm²时, 其饱和磁化强度达到最大, 随着辐照剂量的进一步增加, 其饱和磁化强度反而变小。正电子湮灭图谱结果显示薄膜中主要存在锌空位相关的缺陷, 并且锌空位相关的缺陷随辐照剂量的变化与饱和磁化强度随辐照剂量的变化相一致。本研究从实验上揭示了在含有各种缺陷的Yb掺杂ZnO薄膜中, 锌空位缺陷是影响质子辐照Zn_0.985Yb_0.015O薄膜磁性的主要原因。

关键词: Yb掺杂ZnO, 质子辐照, 稀磁半导体, 铁磁性

Abstract:

Yb-doped ZnO thin films were prepared by inductively coupled plasma enhanced physical vapor deposition method, the as-deposited Zn_0.985Yb_0.015O thin films were irradiated by proton with different doses. X-ray diffraction, X-ray photoelectron spectroscopy, positron annihilation spectroscopy, and magnetic property measurement were used to study the defect and ferromagnetism. The magnetic property measurement results indicate that the saturation magnetization of Zn_0.985Yb_0.015O thin films increases with the increment of irradiation doses, and reaches the maximum value at 6×10¹⁵ ions/cm². With the further increase in irradiation doses, the saturation magnetization decreases. The positron annihilation measurement reveals that Zn vacancy-related defects dominate in proton irradiated Zn_0.985Yb_0.015O thin films. It is found that dependency of saturation magnetization on irradiation doses exhibits the same behavior with the amount of Zn vacancy-related defects on irradiation doses. It is experimentally demonstrated that the ferromagnetism of proton irradiated Yb-doped ZnO thin films is mainly influenced by Zn vacancy- related defects.

Key words: Yb-doped ZnO, proton irradiation, diluted magnetic semiconductor, ferromagnetism

中图分类号:

O474

陈卫宾, 刘学超, 卓世异, 柴骏, 施尔畏. 质子辐照对Yb掺杂ZnO稀磁半导体薄膜缺陷与磁性的影响[J]. 无机材料学报, 2018, 33(8): 903-908.

CHEN Wei-Bin, LIU Xue-Chao, ZHUO Shi-Yi, CHAI Jun, SHI Er-Wei. Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films[J]. Journal of Inorganic Materials, 2018, 33(8): 903-908.

图/表 6

图1 不同剂量质子辐照Zn0.985Yb0.015O薄膜的(a)M-H曲线和(b)饱和磁化强度随质子辐照剂量的变化关系图 (Oe≈79.6 A/m)

Fig. 1 (a) M-H curves of Zn0.985Yb0.015O thin films afterbemg irradiated by different proton doses and (b) saturation magnetization of Zn0.985Yb0.015O thin films after irradiation by different proton doses

图2 经不同辐照剂量辐照后的Zn0.985Yb0.015O薄膜AFM照片

Fig. 2 AFM images of Zn0.985Yb0.015O films after irradiated by different proton doses(a) Unirrated; (b) 1 × 1014 ions/cm2; (c) 8 × 1014 ions/cm2; (d) 6 × 1015 ions/cm2; (e) 1 × 1016 ions/cm2; (f) 4 × 1016 ions/cm2

图3 不同剂量质子辐照Zn0.985Yb0.015O薄膜的XRD图谱

Fig. 3 XRD patterns of Zn0.985Yb0.015O thin films after irradiation by different proton doses

表 1 根据不同剂量质子辐照Zn0.985Yb0.015O薄膜的(002)衍射峰的计算参数

Table 1 Calculated parameters according to (002) diffraction peak of Zn0.985Yb0.015O thin films after irradiation by different proton doses

Parameter/dose (ions/cm²)	0	1×10¹⁴	8×10¹⁴	6×10¹⁵	1×10¹⁶	4×10¹⁶
2θ/(°)	34.222	34.104	34.163	34.163	34.241	34.300
c/nm	0.52360	0.52536	0.52448	0.52448	0.52332	0.52246
FWHM/(°)	0.760	0.741	0.737	0.753	0.700	0.677
D/nm	109.37	112.14	112.76	110.37	118.75	122.80

图4 经剂量为1 × 1014 ions/cm2的质子辐照后Zn0.985Yb0.015O薄膜的XPS图谱

Fig. 4 XPS spectrum of Zn0.985Yb0.015O thin film after irradiation at a proton dose of 1×1014 ions/cm2 with the inset showing high-resolution XPS spectrum of Yb-4d

图5 不同剂量质子辐照Zn0.985Yb0.015O薄膜(a)正电子湮灭图谱, (b)当正电子能量为14 keV时参数S与辐照剂量的关系以及(c)S-W关联曲线

Fig. 5 (a) Positron annihilation spectroscopy, (b) dependency of S parameter on the irradiation dose with the positron energy of 14 keV and (c) S-W curves of Zn0.985Yb0.015O thin films after irradiation by different proton doses

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质子辐照对Yb掺杂ZnO稀磁半导体薄膜缺陷与磁性的影响

Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films

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