4H-SiC晶体中的层错研究

doi:10.15541/jim20170300

无机材料学报 ›› 2018, Vol. 33 ›› Issue (5): 540-544.DOI: 10.15541/jim20170300

4H-SiC晶体中的层错研究

赵宁¹, 刘春俊¹, 王波^1,2, 彭同华^1,2

1. 北京天科合达半导体股份有限公司, 北京 102600;
2. 新疆天科合达蓝光半导体有限公司, 石河子 832000

收稿日期:2017-06-14 修回日期:2017-08-26 出版日期:2018-05-20 网络出版日期:2018-04-26
作者简介:赵宁(1986-), 男, 硕士. E-mail: zhaoning10086@foxmail.com
基金资助:
国家高技术研究发展计划(2014AA041402);北京市科技新星计划(Z141103001814088);新疆兵团重点领域创新团队

Stacking Faults in 4H-SiC Single Crystal

ZHAO Ning¹, LIU Chun-Jun¹, WANG Bo^1,2, PENG Tong-Hua^1,2

1. Beijing Tankeblue Semiconductor Co. Ltd, Beijing 102600, China;
2. Xinjiang Tankeblue Semiconductor Co. Ltd, Shihezi 832000, China

Received:2017-06-14 Revised:2017-08-26 Published:2018-05-20 Online:2018-04-26
About author:ZHAO Ning. E-mail: zhaoning10086@foxmail.com
Supported by:
National High Technology Research and Development Program of China (2014AA041402);New Star Project of Beijing Science and Technology(Z141103001814088);Xinjiang Corps Key Areas of Innovation Team Program

摘要/Abstract

摘要：

采用物理气相传输法(PVT法)在4英寸(1英寸=25.4 mm)偏<11¯20>方向4°的4H-SiC籽晶的C面生长4H-SiC晶体。用熔融氢氧化钾腐蚀4H-SiC晶体, 并利用光学显微镜研究了晶体中的堆垛层错缺陷的形貌特征和生长过程中氮掺杂对4H-SiC晶体中堆垛层错缺陷的影响。结果显示, 4H-SiC晶片表面的基平面位错缺陷的连线对应于晶体中的堆垛层错, 并且该连线的方向平行于<1¯100>方向。相对于非故意氮掺杂生长的4H-SiC晶体, 氮掺杂生长的4H-SiC晶体中堆垛层错显著偏多。然而, 在氮掺杂生长的4H-SiC晶体的小面区域, 虽然氮浓度高于其他非小面区域, 但是该小面区域并没有堆垛层错缺陷存在, 推测这主要是由于4H-SiC晶体小面区域特有的晶体生长习性导致的。

关键词: SiC, 基平面位错, 堆垛层错, 氮掺杂

Abstract:

Thenitrogen doped and unintentional nitrogen doped 4H-SiC single crystals were grown by PVT method on the C-terminated 4H seeds offcut by 4° from the c-face towards the <11¯20> axis, respectively. Optical microscope was used to investigate the characteristic of stacking fault defects and the effects of nitrogen doped onstacking fault defects in 4H-SiC single crystals etched by molten KOH etching. The result shows that the lines of the basal plane dislocation defect of the 4H-SiC wafer surface are corresponding to stacking fault defects in 4H-SiC single crystals, and the direction of the lines is parallel to <1¯100>. There are more stacking fault defects in 4H-SiC single crystals doped with nitrogen than that of unintentional nitrogen doped 4H-SiC single crystals. This phenomenon is consistent with published literatures in which high concentrations of nitrogen caused the formation of stacking fault defects in 4H-SiC single crystals. However, there is no stacking fault defect in the facet area for nitrogen doped 4H-SiC single crystals, although the nitrogen concentration in the facet area is higher than that in the other area, which is presumably due to specific crystal growth habit in the facet area of 4H-SiC single crystal.

Key words: SiC, basal plane dislocation, stacking faults, nitrogen-doped

中图分类号:

TN34

赵宁, 刘春俊, 王波, 彭同华. 4H-SiC晶体中的层错研究[J]. 无机材料学报, 2018, 33(5): 540-544.

ZHAO Ning, LIU Chun-Jun, WANG Bo, PENG Tong-Hua. Stacking Faults in 4H-SiC Single Crystal[J]. Journal of Inorganic Materials, 2018, 33(5): 540-544.

图/表 6

图1 平行和垂直于(1¯100)方向的晶体切片示意图

Fig. 1 Schematic of wafers sliced from grown crystals parallel and perpendicular to the (1¯100)

图2 (1¯100)切片在500℃熔融态的KOH中腐蚀20 min后Si面Q位置的光学显微镜照片

Fig. 2 OM image of the position Q of Si-face of the (1¯100) wafer etched in the molten KOH at 500℃ for 20 min

图3 (a)腐蚀后的(1¯100)切片观测点S的光学显微镜照片和(b)腐蚀后的(1¯100)切片与观测点S对称的观测点T的光学显微镜照片

Fig. 3 (a) OM image of the point S of side face of the etched (1¯100) wafer and (b) OM image of the point T which is symmetrical to the point S of side face of the etched (1¯100) wafer

图4 (a)腐蚀后的(1¯100)切片DCGH面的CG侧的光学显微镜照片, (b)腐蚀后的(1¯100)切片侧面ABCD的BC侧的光学显微镜照片和(c)图(a)与图(b)的拼接照片

Fig. 4 (a) OM image of the end CG of DCGH face of the etched (1¯100) wafer, (b) OM image of the end BC of ABCD face of the etched (1¯100) wafer and (c) stitching OM image of (a) and (b)

图5 SiC晶体中堆垛层错的特征

Fig. 5 Characteristic of stacking fault in SiC crystal

图6 腐蚀后的(000¯1)切片不同位置的光学显微镜照片

Fig. 6 OM images of the different positions of the etched (000¯1) wafer

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4H-SiC晶体中的层错研究

Stacking Faults in 4H-SiC Single Crystal

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