锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究

doi:10.15541/jim20170256

无机材料学报 ›› 2018, Vol. 33 ›› Issue (5): 535-539.DOI: 10.15541/jim20170256

锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究

李天^1,2, 陈秀芳^1,2, 杨祥龙^1,2, 谢雪健^1,2, 张福生^1,2, 肖龙飞^1,2, 王荣堃^1,2, 徐现刚^1,2, 胡小波^1,2, 王瑞琪^2,3, 于芃^2,3

1. 山东大学晶体材料国家重点实验室, 济南 250100;
2. 全球能源互联网(山东)协同创新中心, 济南 250061;
3. 国网山东省电力公司电力科学研究院, 济南 250001

收稿日期:2017-05-22 修回日期:2017-09-04 出版日期:2018-05-20 网络出版日期:2018-04-26
作者简介:李天(1992-), 男, 硕士研究生. E-mail: 13306490035@163.com
基金资助:
国家重点研发计划(2016YFB0400401);装备预研教育部联合基金(青年人才)(6141A0232);国家自然科学基金(51502156, 61327808, 61504075);国家电网公司科技项目(SGSDDK00KJJS1600071);国家重点基础研究发展计划(973计划)(2013CB632801)

Characterization and Electrical Property of Impurity Concentration in Ge-N Codoped SiC Crystals

LI Tian^1,2, CHEN Xiu-Fang^1,2, YANG Xiang-Long^1,2, XIE Xue-Jian^1,2, ZHANG Fu-Sheng^1,2, XIAO Long-Fei^1,2, WANG Rong-Kun^1,2, XU Xian-Gang^1,2, HU Xiao-Bo^1,2, WANG Rui-Qi^2,3, YU Peng^2,3

1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
2. Collaborative Innovation Center for Global Energy Interconnection(Shandong), Jinan 250061, China;
3. State Grid Shandong Electric Power Research Institute, Jinan 250001, China

Received:2017-05-22 Revised:2017-09-04 Published:2018-05-20 Online:2018-04-26
About author:LI Tian. E-mail: 13306490035@163.com
Supported by:
National Key R&D Program of China (2016YFB0400401);The joint Foundation of Equipment Development and State Education Ministry for Outstanding Researcher (6141A0232);National Natural Science Foundation of China (51502156, 61327808, 61504075);The Science and Technology Project of State Grid Corporation of China (SGSDDK00KJJS1600071);National Program on Key Basic Research Project (973 Program) (2013CB632801)

摘要/Abstract

摘要：

采用物理气相传输(PVT)法生长了2英寸(1英寸=25.4 mm)锗氮(Ge-N)共掺和单一Ge掺杂碳化硅晶体材料, 并制备成10 mm× 10 mm的SiC晶片。利用半导体工艺技术在不同衬底的碳面上制备钛(Ti)/铂(Pt)/金(Au)多层金属电极。使用二次离子质谱仪(SIMS)、霍尔测试仪(Hall)等测试手段对其表征。结果表明, Ge元素和N元素的共同掺杂可以有效提高SiC中Ge元素的掺杂浓度, Ge浓度可以达到1.19×10¹⁹/cm³。所有晶片衬底均可以在不低于700℃的退火环境中形成欧姆接触, 且在700℃时退火形成最佳欧姆接触。高浓度Ge掺杂衬底接触电阻明显小于低浓度Ge掺杂衬底接触电阻, 这表明可以通过提高晶体中Ge元素浓度来提高器件性能。Hall测试结果表明, 随着Ge掺杂浓度的升高, 衬底迁移率会逐渐降低。这是由于Ge-N共掺后, SiC晶格匹配度提高, Ge元素的掺杂浓度变大, 增加了杂质散射对迁移率的影响。

关键词: 物理气相传输法, Ge掺杂, 晶格匹配, 欧姆接触, 迁移率

Abstract:

2-inch Ge-N codoped and Ge doped SiC single crystals were grown by physical vapor transport (PVT) method. And the SiC ingots were fabricated into 10 mm×10 mm SiC wafers for characterization. Semiconductor technology was used to fabricate Ti/Pt/Au metal contact on the carbide-terminated face of SiC wafers. Subsequently, all samples were characterized by secondary ion mass spectrometry (SIMS) and Hall measurements. The SIMS results showed that Ge-N codoping method could enhance the Ge doping concentration in SiC crystals effectively, which could achieve 1.19×10¹⁹/cm³. According to Hall measurement, ohmic contact could be obtained when samples were annealed at temperature higher than 700℃ and the optimal annealing temperature was 700℃. In addition, the contact resistance of the heavy Ge doped sample was lower than that of the light doped one, indicating that the ohmic contact property could be enhanced by improving the Ge doping concentrations in SiC crystals. Furthermore, as the increase of Ge doping concentration, the mobility gradually decreased. It was ascribed to that the Ge-N atoms matched well with SiC lattice in codoping method leading to higher Ge doping concentration. Under that condition, the impurity scattering effect became evident, which resulted in a lower mobility for Ge-N codoped sample.

Key words: Ge doping, lattice, Ohmic contact, mobility

中图分类号:

TB34

李天, 陈秀芳, 杨祥龙, 谢雪健, 张福生, 肖龙飞, 王荣堃, 徐现刚, 胡小波, 王瑞琪, 于芃. 锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究[J]. 无机材料学报, 2018, 33(5): 535-539.

LI Tian, CHEN Xiu-Fang, YANG Xiang-Long, XIE Xue-Jian, ZHANG Fu-Sheng, XIAO Long-Fei, WANG Rong-Kun, XU Xian-Gang, HU Xiao-Bo, WANG Rui-Qi, YU Peng. Characterization and Electrical Property of Impurity Concentration in Ge-N Codoped SiC Crystals[J]. Journal of Inorganic Materials, 2018, 33(5): 535-539.

图/表 5

图1 Ge-N共掺SiC衬底和单一Ge掺杂SiC衬底的SIMS测试结果

Fig. 1 SIMS analysis of Ge-N-codoped SiC substrate and Ge-doped SiC crystal substrate

表1 不同Ge掺杂浓度的SiC样品

Table 1 SiC crystal samples with different Ge-doping concentrations

Sample	Structure	Ge doping concentration/cm^-3
A	Ti/Pt/Au/SiC	Undoped
B	Ti/Pt/Au/Ge-SiC	~5×10¹⁷
C	Ti/Pt/Au/Ge-SiC	9.39×10¹⁸
D	Ti/Pt/Au/Ge-SiC	1.19×10¹⁹

图2 样品C在不同温度退火后的伏安特性曲线图

Fig. 2 I-V curves of sample C annealed at different temperatures

图3 不同样品在700℃退火后的伏安特性曲线图

Fig. 3 I-V curves of different samples annealed at 700℃

图4 不同Ge掺杂浓度的SiC样品的迁移率变化规律曲线图

Fig. 4 Mobility curve of different Ge-doping concentration SiC crystal samples

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锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究

Characterization and Electrical Property of Impurity Concentration in Ge-N Codoped SiC Crystals

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