无机材料学报 ›› 2018, Vol. 33 ›› Issue (4): 447-452.DOI: 10.15541/jim20170237

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Ge掺杂对TiO2-Nb2O5-CaCO3压敏陶瓷结构及性能的影响

康昆勇1,2,3, 徐开蒙1,2,3, 刘灿1,2,3, 杨晓琴1,2,3, 郑志锋1,2,3   

  1. 西南林业大学1. 材料科学与工程学院;
    2. 云南省生物质高效利用工程实验室;
    3. 云南省高校生物质化学炼制与合成重点实验室, 昆明 650224
  • 收稿日期:2017-05-25 修回日期:2017-08-09 出版日期:2018-04-30 网络出版日期:2018-03-27
  • 作者简介:康昆勇(1973-), 男, 博士. E-mail: kangkunyong@163.com
  • 基金资助:
    国家自然科学基金(31670599)

Ge-doping in TiO2-Nb2O5-CaCO3 Varistor Ceramics: Structure and Property

KANG Kun-Yong1,2,3, XU Kai-Meng1,2,3, LIU Can1,2,3, YANG Xiao-Qing1,2,3, ZHENG Zhi-Feng1,2,3   

  1. 1. Faculty of Materials Science and Engineering, Southwest Forestry University, Kunming 650224, China;
    2. Yunnan Provincial Engineering Laboratory for Highly-Efficient Utilization of Biomass, Southwest Forestry University, Kunming 650224, China;
    3. Yunnan Provincial University Key Laboratory for Biomass Chemical Refinery & Synthesis, Southwest Forestry University, Kunming 650224, China;
  • Received:2017-05-25 Revised:2017-08-09 Published:2018-04-30 Online:2018-03-27
  • About author:KANG Kun-Yong. E-mail: kangkunyong@163.com
  • Supported by:
    National Natural Science Foundation of China (31670599)

摘要:

TiO2 压敏电阻是一种典型的非线性电流-电压电子器件, 本文研究了Ge掺杂对TiO2-Nb2O5-CaCO3压敏陶瓷的非线性系数α和压敏电压EB的影响。采用传统的球磨-成型-烧结方法成功制备Ge掺杂TiO2-Nb2O5-CaCO3压敏陶瓷, 用压敏直流参数仪测试样品的非线性系数α、压敏电压EB和漏电流JL等电学性质, 并根据相关公式计算样品平均势垒高度。XRD、XPS、SEM和STEM分析表明, Ge掺杂显著改变TiO2-Nb2O5 -CaCO3压敏陶瓷微结构, 提高非线性系数α和减小压敏电压EB。当施主Nb2O5和受主CaCO3掺杂浓度分别为0.5mol%时, 掺杂1.0mol% Ge的压敏陶瓷获得了最高的非线性系数和较低的压敏电压(α=10.6, EB=8.7 V/mm), 明显优于不掺杂Ge的TiO2-Nb2O5-CaCO3压敏陶瓷。此外, Ge熔点较低, 作为烧结助剂可以降低陶瓷的烧结温度, TiO2-Nb2O5-CaCO3-Ge压敏陶瓷最佳烧结温度是1300℃。

 

关键词: TiO2压敏陶瓷, 非线性系数, 压敏电压, Ge

Abstract:

TiO2 varistors are typical electronic devices with nonlinear current-voltage property fabricated from TiO2 ceramics. This study investigated the influence of Ge doping on the nonlinear coefficient α and the breakdown electric field EB of TiO2-Nb2O5-CaCO3 varistor ceramics. TiO2-Nb2O5-CaCO3 varistor ceramics doped with Ge were successfully prepared by using traditional method of ball milling-molding-sintering. The electrical performance, including nonlinear coefficient α, breakdown electric field EB, and leakage current JL, was tested with a varistor-direct current-parameter instrument. Average barrier height ΦB of each sample was calculated by relevant formula. Analysis of X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and scanning transmission electronic microscopy demonstrated that Ge doping notably changed the microstructure of TiO2-Nb2O5-CaCO3 ceramics, thereby increasing α and decreasing EB. When Nb2O5 and CaCO3 doping content were 0.5mol%, the TiO2-Nb2O5-CaCO3 varistor ceramics doping with 1.0 mol% Ge exhibited high α (10.6), low EB (8.7 V/mm), and highest ΦB (1.73 eV), superior to previous published findings. Furthermore, Ge with low melting point as sintering aid could reduce the sintering temperature of the varistor ceramics, with optimal sintering temperature at 1300℃.

Key words: TiO2 varistor, nonlinear coefficient, breakdown voltage, Ge

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