CdZnTe晶体表面Au电极薄膜的制备及其欧姆接触性质

doi:10.15541/jim20170186

无机材料学报 ›› 2018, Vol. 33 ›› Issue (3): 273-278.DOI: 10.15541/jim20170186

CdZnTe晶体表面Au电极薄膜的制备及其欧姆接触性质

谢经辉^{1, 2}, 刘雨从², 王超², 殷子薇², 陈嘉栋^{2, 3}, 邓惠勇², 沈悦¹, 王林军¹, 张建国², 戴宁²

1. 上海大学材料科学与工程学院, 上海 200444;
2. 中国科学院上海技术物理研究所, 上海 200083;
3. 中国科学院上海技术物理研究所, 常州光电技术研究所, 常州 213000

收稿日期:2017-04-19 修回日期:2017-07-03 出版日期:2018-03-20 网络出版日期:2018-03-12
作者简介:谢经辉(1990-), 男, 硕士研究生. E-mail: xiejinghui2007@163.com
基金资助:
国家自然科学基金(61290304, 2012CB619200);科技部重大研发计划(2016YFB0402405, 2016YFA0202201);上海市科委基金(16ZR1441200, 15520500200);中国科学院前沿重点项目(QYZDJ-SSW-SLH018)

Au Film Electrodes on CdZn Te Surface: Preparation and Ohmic Contact Property

XIE Jing-Hui^{1, 2}, LIU Yu-Cong², WANG Chao², YIN Zi-Wei², CHEN Jia-Dong^{2, 3}, DENG Hui-Yong², SHEN Yue¹, WANG Lin-Jun¹, ZHANG Jian-Guo², DAI Ning²

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;
2. Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China;
3. Changzhou Institute of Photoelectric Technology, Shanghai Institute of Technical Physics, Chinese Academy of Science, Changzhou 213000, China

Received:2017-04-19 Revised:2017-07-03 Published:2018-03-20 Online:2018-03-12
About author:XIE Jing-Hui. E-mail: xiejinghui2007@163.com
Supported by:
National Natural Science Foundation of China (61290304, 2012CB619200);Major Project of the Science and Technology Ministry of China (2016YFB0402405, 2016YFA0202201);Natural Science Foundation of Shanghai (16ZR1441200, 15520500200);Frontier Science Research Project (Key Programs) of Chinese Academy of Sciences (QYZDJ-SSW-SLH018)

摘要/Abstract

摘要：

为了研究不同制备工艺对电极欧姆接触特性的影响, 分别采用真空蒸发法、溅射法及化学沉积法在CdZnTe晶片表面制备了Au薄膜电极, 通过测试样品的SEM、I-V曲线及交流阻抗谱, 研究了不同电极制备工艺及退火处理对Au薄膜电极的微观结构及欧姆接触特性的影响。结果表明化学沉积法制备的Au薄膜表面更加平整、致密, 接触势垒的高度较低, 电极欧姆接触特性最好。退火处理可以改善电极的欧姆接触特性, 100℃退火后, 化学沉积法制备的Au电极的欧姆系数由0.883提高至0.915, 势垒高度由0.492降低至0.487 eV。交流阻抗谱分析表明, 化学沉积法制备电极具有最低的接触势垒, 这与界面处晶片表面的掺杂及缺陷的变化有关。

关键词: 碲锌镉, Au薄膜制备, 欧姆接触, 交流阻抗谱

Abstract:

Tellurium cadmium zinc (CdZnTe) is a kind of II - VI wide band-gap semiconductor compound, which is a promising material to fabricate the X- or γ-ray detectors. Its Ohmic contact property significantly influences the detector performance. In order to study the influence of preparation technology on Ohmic contact properties of the electrode, Au film electrodes were deposited by sputtering deposition, vacuum evaporation and electroless deposition. By analyzing I-V curves, SEM and AC impedance spectra, microstructure and Ohmic contact properties of the samples were studied. The results show that surtace of the sample prepared by the electroless deposition is smooth and dense showing lower contact barrier and better Ohmic contact properties smooth and Ohmic contact properties of the electrodes. After annealing at 100℃, the Ohmic coefficient of the Au electrode prepared by electroless deposition increases from 0.883 to 0.915, and the barrier height reduces from 0.492 eV to 0.487 eV, displaying improved. AC impedance spectroscopy shows that it is the change of impurity-doping and defects of CdZnTe surface at the interface that attribute to the lowest contact barrier of the Au electrode prepared by electroless deposition.

Key words: CdZnTe, Au film preparation, Ohmic contact, AC impedance spectra

中图分类号:

O472

谢经辉, 刘雨从, 王超, 殷子薇, 陈嘉栋, 邓惠勇, 沈悦, 王林军, 张建国, 戴宁. CdZnTe晶体表面Au电极薄膜的制备及其欧姆接触性质[J]. 无机材料学报, 2018, 33(3): 273-278.

XIE Jing-Hui, LIU Yu-Cong, WANG Chao, YIN Zi-Wei, CHEN Jia-Dong, DENG Hui-Yong, SHEN Yue, WANG Lin-Jun, ZHANG Jian-Guo, DAI Ning. Au Film Electrodes on CdZn Te Surface: Preparation and Ohmic Contact Property[J]. Journal of Inorganic Materials, 2018, 33(3): 273-278.

图/表 6

图1 不同工艺条件下Au薄膜电极的SEM照片

Fig. 1 SEM images of Au film electrode prepared under different preparation conditions(a) Sputtering method; (b) Vacuum evaporation method; (c) Electroless deposition method; (d) Annealing after sputtering; (e) Annealing after vacuum evaporation; (f) Annealing after electroless deposition

图2 退火前(a)后(b)样品的I-V曲线

Fig. 2 I-V curves of the samples before (a) and after annealing at 100℃ for 2 h in air (b)

表1 不同样品的欧姆特性系数变化

Table 1 Change of the Ohm coefficient for different samples

	Sp	Ev	Ele
b(before annealing)	1.346	0.771	0.883
b(annealing for 2 h)	1.213	0.875	0.915

图3 退火前(a)后(b)样品的lg J-V曲线

Fig. 3 lg J-V curves of the samples before (a) and after annealing at 100℃ for 2 h (b)

表2 不同样品势垒高度的变化

Table 2 Change of the barrier height for different samples

	Sp	Ev	Ele
${{\varphi }_{\text{B}}}$/eV(before annealing)	0.503	0.498	0.492
${{\varphi }_{\text{B}}}$/eV(annealing for 2 h)	0.494	0.493	0.487

图4 阻抗虚部与频率的关系

Fig. 4 Dependence of the imaginary part of impedance on the frequency

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CdZnTe晶体表面Au电极薄膜的制备及其欧姆接触性质

Au Film Electrodes on CdZn Te Surface: Preparation and Ohmic Contact Property

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