(Gd1-xYx)2Si2O7: Ce混晶闪烁体的制备及性能研

doi:10.15541/jim20160492

摘要/Abstract

摘要：

采用固相烧结法制备了(Gd_1-_xY_x)₂Si₂O₇: 0.1%Ce(x=0.1, 0.2, ...0.7, 1)的系列多晶样品, 通过荧光激发发射光谱和X射线激发发射谱对该系列样品进行筛选, 发现(Gd_0.5Y_0.5)₂Si₂O₇: 0.1%Ce的组分发光效率最高。采用浮区法生长了该组分单晶, 并对该单晶的结构、荧光和闪烁性能进行了测试和讨论。XRD结果表明, (Gd_0.5Y_0.5)₂Si₂O₇: 0.1%Ce 闪烁单晶为正交结构, 紫外激发-发射谱、荧光衰减谱显示该晶体的发光主峰位位于362 nm, 但由于Gd(⁶I_J)→Ce(5d₃)的无辐射能量传递的存在, 使样品出现211 ns的荧光慢分量。采用X射线激发发射谱, γ射线激发多道能谱和闪烁衰减谱对样品的闪烁性能进行了表征。结果表明, GYPS: Ce晶体的光产额为Ce掺杂硅酸钇镥标样的90%, 由于该无辐射能量传递和较低的Ce掺杂浓度, 单晶闪烁发光中存在较长的慢分量, 闪烁衰减慢分量成分占到总发光的87%。

关键词: 闪烁体, 闪烁性能, 混晶, (Gd0.5Y0.5)2Si2O7: 0.1%Ce

Abstract:

Polycrystalline samples of (Gd_1-_xY_x)₂Si₂O₇: Ce(x=0.1, 0.2, ...0.7, 1) were prepared through solid state reaction method. The serial samples were screened through scintillation luminescent efficiency i.e. X-ray excited luminescence spectra. The luminescence efficiency of (Gd_0.5Y_0.5)₂Si₂O₇: 0.1%Ce sample was found to be the highest among all samples. The single crystal with this composition was grown by floating zone method. The structure, photoluminescence and scintillation luminescence properties of as grown sample were measured and discussed. The structure of the as grown single crystal was determined by XRD spectrum. Photoluminescence properties were evaluated in terms of photoluminescence excitation and emission spectra and photoluminescence decay curves. The X-ray excited luminescence spectrum, γ-ray multi-channel energy spectrum and scintillation decay curve were measured. According to the measurement result, the as-grown single crystal had orthorhombic structure. The main luminescence peak is around 362 nm. Two-exponential decay curve with fast component of 30 ns and slow component of 211 ns occurs in the PL process due to the Gd(⁶I_J)→Ce(5d₃) nonradiative energy transfer. Slow component accounts for 87% of the total during the scintillation luminescence, which is resulted from the energy transfer and relative low Ce doping concentration. Light output of the as-grown single crystal sample is 90% of the cerium doped lutetium yttrium silicate scintillator.

Key words: scintillator, scintillation performance, mixing crystal, (Gd0.5Y0.5)2Si2O7: 0.1%Ce

中图分类号:

TQ174

冯鹤, 徐悟生, 张志军, 徐展, 肖丰, 赵景泰. (Gd_1-_xY_x)₂Si₂O₇: Ce混晶闪烁体的制备及性能研[J]. 无机材料学报, 2017, 32(9): 931-935.

FENG He, XU Wu-Sheng, ZHANG Zhi-Jun, XU Zhan, XIAO Feng, ZHAO Jing-Tai. Synthesis and Performance of (Gd_1-_xY_x)₂Si₂O₇: Ce Mixing Crystal Scintillato[J]. Journal of Inorganic Materials, 2017, 32(9): 931-935.

图/表 7

图1 (Gd1-xYx)2Si2O7: Ce (x=0.1, 0.2, ...0.7, 1) 多晶样品的荧光激发-发射谱(λex=357nm, λem=330nm)

Fig. 1 Photoluminescence (PL) and excitation (PLE) spectra of (Gd1-xYx)2Si2O7: Ce (x=0.1, 0.2, ...0.7, 1) polycrystalline samples (λex=357 nm, λem=330 nm)

图2 (Gd1-xYx)2Si2O7: Ce (x=0.1, 0.2, ...0.7, 1) 多晶样品的X射线激发发射谱

Fig. 2 XEL spectra of (Gd1-xYx)2Si2O7: Ce (x=0.1, 0.2, ... 0.7, 1) polycrystalline samples

图3 浮区法制备的GYPS: Ce单晶样品及其XRD图谱

Fig. 3 Photograph and XRD pattern of the as-grown GYPS: Ce single crystal

图4 GYPS: Ce单晶样品的荧光激发发射谱和X射线激发发射谱

Fig. 4 PL, PLE and XEL spectra of the as-grown GYPS: Ce single crystal sample

图5 GYPS: Ce单晶样品的荧光衰减谱

Fig. 5 PL decay curves of GYPS: Ce single crystal sample (a) λex=336 nm-λem=362 nm; (b) λex=274 nm-λem=362 nm

图6 GYPS: Ce单晶样品的137Cs γ射线激发闪烁衰减谱

Fig. 6 Scintillation decay curve under γ-ray excitation

图7 GYPS: Ce和LYSO: Ce样品的γ射线激发多道能谱

Fig. 7 Multi channel energy spectra under γ-ray excitation of GYPS: Ce and LYSO: Ce single crystal samples

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(Gd_1-_xY_x)₂Si₂O₇: Ce混晶闪烁体的制备及性能研

Synthesis and Performance of (Gd_1-_xY_x)₂Si₂O₇: Ce Mixing Crystal Scintillato

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