三嗪对CVD石墨烯n型掺杂的研究

doi:10.15541/jim20160422

无机材料学报 ›› 2017, Vol. 32 ›› Issue (5): 517-522.DOI: 10.15541/jim20160422

三嗪对CVD石墨烯n型掺杂的研究

刘颖^{1, 2}, 戴丹², 江南²

(1. 上海大学材料科学与工程学院, 上海 200072; 2. 中国科学院宁波材料技术与工程研究所, 宁波 315201)

收稿日期:2016-07-18 修回日期:2016-10-19 出版日期:2017-05-20 网络出版日期:2017-05-02
作者简介:刘颖(1990–), 女, 硕士研究生. E-mail: liuy@nimte.ac.cn
基金资助:
浙江省自然科学基金(Q15E020007);宁波市自然科学基金(201501HJ-B01248);国际科技合作专项(S2015ZR1100)

Synthesis of the Nitrogen-doped CVD Graphene through Triazine

LIU Ying^{1, 2}, DAI Dan², JIANG Nan²

(1. Shanghai University School of Materials Science and Engineering, Shanghai 200072, China; 2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China)

Received:2016-07-18 Revised:2016-10-19 Published:2017-05-20 Online:2017-05-02
About author:LIU Ying. E-mail: liuy@nimte.ac.cn
Supported by:
Zhejiang Provincial Natural Science Foundation of China (Q15E020007);Ningbo Natural Science Foundation (201501HJ-B01248);Program of International S&T Cooperation (S2015ZR1100)

摘要/Abstract

摘要：

以化学气相沉积(CVD)制备的单层石墨烯为原料, 小分子三嗪为掺杂剂, 采用吸附掺杂的方式, 在低温下对石墨烯实现n型掺杂。利用拉曼光谱(Raman)、X射线光电子能谱分析(XPS)、原子力显微镜(AFM)、紫外分光光度计(UV)和霍尔效应测试仪(Hall)对样品的形貌、结构及电学性能进行表征。结果表明: 该方法简单安全, 能够对石墨烯实现均匀的n型掺杂, 掺杂石墨烯的透光率达到95%。掺杂后石墨烯的特征峰G峰和2D峰向高波数移动。掺杂180 min后, 载流子浓度达到4×10¹²/cm², 接近掺杂前的载流子浓度, 掺杂后的石墨烯在450℃的退火温度下具有可逆能力, 其表面电阻在300℃以下具有较好的稳定性。

关键词: CVD石墨烯, 三嗪, n型掺杂, 载流子浓度, 表面电阻

Abstract:

Nitrogen-doped graphene (N-graphene) was prepared via molecular doping from symTriazine molecules at low temperature. The phase structure, morphology and electrical property were characterized by Raman spectroscopy (Raman), X-ray photoelectron spectroscope(XPS), atomic force microscope (AFM), ultraviolet spectrophotometer(UV), and Hall tester. Here the method provides a simple and safe process to grow N-graphene. The morphology of N-graphene retains good uniformity, and the transmittance of the graphene is 95% in the range from 300 nm to 800 nm. The typical graphene peaks G-band and 2D-band both upshift after doping. The hole-carrier concentration is decreased immediately after Triazine decoration. After exposure to Triazine for 3 h, the charge-carrier concentration of N-graphene remains as high as 4×10¹²/cm², which approaching the pristine Chemical Vapor Deposition (CVD) graphene’s carrier concentration due to the abundant molecular doping. After N-graphene annealed at 450℃, a hole-carrier concentration of ~8×10¹²/cm² can be regenerated. The sheet resistance of N-graphene can stay steady at 300℃. The mechanism of Triazine doping is that Triazine is an electron-rich aromatic molecule due to the incorporation of N atoms in the aromatic ring, and some negative charges are expected to transfer onto the graphene. This research provides a simple method to obtain N-graphene doping for future application in electrical devices.

Key words: CVD graphene, triazine, nitrogen-doped, carrier concentration, sheet resistance

中图分类号:

TB321

刘颖, 戴丹, 江南. 三嗪对CVD石墨烯n型掺杂的研究[J]. 无机材料学报, 2017, 32(5): 517-522.

LIU Ying, DAI Dan, JIANG Nan. Synthesis of the Nitrogen-doped CVD Graphene through Triazine[J]. Journal of Inorganic Materials, 2017, 32(5): 517-522.

图/表 4

图1 三嗪掺杂石墨烯的制备示意图

Fig. 1 Schematic for Triazine-doping CVD graphene

图2 (a)三嗪掺杂石墨烯的示意图及石墨烯掺杂前后的拉曼谱图, (b, c, d)分别为D峰、2G峰和I2D/IG的拉曼成像图

Fig. 2 (a) Raman spectra of graphene before and after Triazine doping, (b, c, d) Raman images of D peak, 2G peak and I2D/IG

图3 三嗪掺杂前后石墨烯的AFM的对比(a, b), 可见光透过率(c), (d)三嗪掺杂后石墨烯的XPS全谱图

Fig. 3 AFM images (a, b) and transmittance of graphene before and after Triazine doping, respectiuely, (c) vicible light transmittance and (d) XPS survey of grapheme after Triazine doping

图4 氮掺杂石墨烯载流子浓度及表面电阻增大率随掺杂时间(a)和退火温度(b)的变化曲线, 三嗪掺杂的机理图(c)

Fig. 4 Change of nitrogen doped graphene carrier concentration and the increasing rate of surface resistance with doping time (a) and annealing temperature (b), mechanism of Triazine doping (c)

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三嗪对CVD石墨烯n型掺杂的研究

Synthesis of the Nitrogen-doped CVD Graphene through Triazine

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