MBE技术蓝宝石衬底上生长VO2薄膜及其太赫兹和金属-绝缘体相变特性研究

doi:10.15541/jim20160456

无机材料学报 ›› 2017, Vol. 32 ›› Issue (4): 437-442.DOI: 10.15541/jim20160456

MBE技术蓝宝石衬底上生长VO₂薄膜及其太赫兹和金属-绝缘体相变特性研究

孙洪君¹, 王敏焕¹, 边继明^1,2, 苗丽华¹, 章俞之², 骆英民¹

(1. 大连理工大学三束材料改性教育部重点实验室, 物理与光电工程学院, 大连 116024; 2. 中国科学院上海硫酸盐研究所中国科学院特种无机涂层重点实验室, 上海 200050)

收稿日期:2016-08-08 出版日期:2017-04-20 网络出版日期:2017-03-24
作者简介:孙洪君. E-mail: jun8894@163.com

Terahertz and Metal-insulator Transition Properties of VO₂ Film Grown on Sapphire Substrate with MBE

SUN Hong-Jun¹, WANG Min-Huan¹, BIAN Ji-Ming^1,2, MIAO Li-Hua¹, ZHANG Yu-Zhi², LUO Ying-Min¹

(1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams(Ministry of Education, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China; 2. Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China)

Received:2016-08-08 Published:2017-04-20 Online:2017-03-24
About author:SUN Hong-Jun (1992-), female, candidate of master degree. E-mail: jun8894@163.com
Supported by:
Fundamental Research Funds for the Central Universities (DUT16LAB11);Opening Project of Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences (KLICM-2014-01)

摘要/Abstract

摘要：

采用分子束外延(MBE)技术在单晶蓝宝石衬底上生长了高质量化学计量比二氧化钒(VO₂)薄膜, 通过该技术实现薄膜厚度15~60 nm精确控制。对于优化条件下VO₂薄膜, 实现了电阻率变化超过4个数量级的优异金属-绝缘体相变, 近似于之前报道高质量单晶VO₂相变特性。特别是通过太赫兹时域光谱分析了不同厚度的VO₂薄膜在太赫兹波段的光学特性。结果表明: VO₂薄膜的厚度对其在太赫兹波段的光学特性有很大影响。因此, 为了获得更优的可靠性和重复性能, VO₂薄膜的厚度必须得到精确控制。本研究结果对于下一步VO₂基太赫兹器件研究具有重要意义。

关键词: 二氧化钒薄膜, 太赫兹时域光谱, 分子束外延, 金属-绝缘体相变

Abstract:

High quality stoichiometric VO₂ films were grown on single crystal sapphire substrates by molecular beam epitaxy (MBE), the film thicknesses were precisely controlled on the nanoscale ranging from 15 nm to 60 nm. For the optimized sample, a distinct reversible metal-insulator transition (MIT) with abrupt resistance change more than four orders of magnitude was observed, which was comparable to the ever reported result for high quality single crystal VO₂. Especially, the optical properties in the terahertz (THz) frequency range were characterized with THz time-domain spectroscopy (THz-TDs) measurements for samples with various thicknesses, and the results indicate that the THz properties of VO₂ film was significantly affected by the thickness. Therefore, the thickness should to be precisely controlled to obtain reproducible and reliable performance. The THz devices based on VO₂ film may benefit significantly from these achievements.

Key words: vanadium dioxide film, terahertz time-domain spectroscopy (THz-TDs), molecular beam epitaxy (MBE), metal-insulator transition

中图分类号:

TB34

孙洪君, 王敏焕, 边继明, 苗丽华, 章俞之, 骆英民. MBE技术蓝宝石衬底上生长VO₂薄膜及其太赫兹和金属-绝缘体相变特性研究[J]. 无机材料学报, 2017, 32(4): 437-442.

SUN Hong-Jun, WANG Min-Huan, BIAN Ji-Ming, MIAO Li-Hua, ZHANG Yu-Zhi, LUO Ying-Min. Terahertz and Metal-insulator Transition Properties of VO₂ Film Grown on Sapphire Substrate with MBE[J]. Journal of Inorganic Materials, 2017, 32(4): 437-442.

图/表 6

Fig. 1 Schematic diagram of THz-TDs measurement system

Fig. 2 Typical XRD patterns of VO2 films grown on sapphire substrates by MBE

Fig. 3 AFM images with scanning area of 4 μm×4 μm for surface morphology of VO2 films grown on sapphire substrates by MBE with various thicknesses(a) S1; (b) S2; (c) S3; (d) S4

Table 1 Detailed MIT parameters of the optimized VO2 thin film grown by MBE

Parameters	T_c /℃	ΔH/℃	ΔT/℃	Amplitude
VO₂	66 (Heating)	5	9 (Heating)	1.01×10⁴
VO₂	61 (Cooling)	5	12 (Cooling)	1.01×10⁴

Fig. 4 Thermal hysteresis loops of sheet resistance of the optimized VO2 sample grown on sapphire substrates by MBEInset shows the differential d(R)/d(T) versus temperature curves for heating and cooling branches to determine the phase transition Tc from the Gaussian fit of the peaks. The lower plan exhibits the schematic diagram of microstructure evolution with the infinite linear V-V chains in different temperature range

Fig. 5 (a) The time-domain THz transmission of VO2 films grown on sapphire substrates by MBE with preciously controlled thickness ranging from 15 nm to 60 nm and (b) the THz transmitted amplitude as a function of film thickness

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MBE技术蓝宝石衬底上生长VO₂薄膜及其太赫兹和金属-绝缘体相变特性研究

Terahertz and Metal-insulator Transition Properties of VO₂ Film Grown on Sapphire Substrate with MBE

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