PLZST陶瓷衬底上La0.7Sr0.3MnO3薄膜生长及其磁性能和电输运特性研究

doi:10.15541/jim20160332

无机材料学报 ›› 2017, Vol. 32 ›› Issue (3): 326-330.DOI: 10.15541/jim20160332

PLZST陶瓷衬底上La_0.7Sr_0.3MnO₃薄膜生长及其磁性能和电输运特性研究

肖玲¹, 陈莹¹, 刘振¹, 王根水¹, 温志渝², 董显林¹

(1. 中国科学院上海硅酸盐研究所, 无机功能材料与器件重点实验室, 上海 200050；2. 重庆大学微系统中心, 重庆 400044)

收稿日期:2016-05-24 出版日期:2017-03-20 网络出版日期:2017-02-24
作者简介:XIAO Lin(1990–), female, candidate of Master degree. E-mail: 13916314676@163.com

Growth, Magnetic and Electrical Transport Properties of La_0.7Sr_0.3MnO₃ Thin Films on PLZST Ceramics

XIAO Ling¹, CHEN Ying¹, LIU Zhen¹, WANG Gen-Shui¹, WEN Zhi-Yu², DONG Xian-Lin¹

(1. CAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Micro-system Center, Chongqing University, Chongqing 400030, China)

Received:2016-05-24 Published:2017-03-20 Online:2017-02-24
About author:XIAO Lin(1990–), female, candidate of Master degree. E-mail: 13916314676@163.com
Supported by:
National Natural Science Foundation of China (51302295, 61371059);Natural Science Foundation of Shanghai (13ZR1445600);Visiting Scholar Foundation of Key Discipline Laboratory of New Micro/Nano Device and System Technology in Chongqing University (2014MS05)

摘要/Abstract

摘要：

采用磁控溅射法在PLZST陶瓷衬底上制备了不同厚度的LSMO薄膜, 并对其微结构、磁性能及电输运特性进行了研究。结果表明, LSMO薄膜具有单一钙钛矿结构, 晶粒均匀, 表面平整, 其中20 nm厚LSMO薄膜粗糙度仅为2.93 nm。在10~300 K温度范围内, LSMO薄膜均具有大的磁电阻效应, 20 nm厚的LSMO薄膜磁电阻温度稳定性优异。随着薄膜厚度的增加, 薄膜的居里温度、金属绝缘体转变温度、磁化强度和导电性能降低。这可能是由于Pb、Sn、Zr等离子扩散进入LSMO薄膜中, 导致MnO₆八面体畸变造成的。

关键词: LSMO薄膜, PLZST陶瓷, 磁电阻, 扩散

Abstract:

La_0.7Sr_0.3MnO₃ (LSMO) thin films with different thicknesses were deposited on (Pb_0.97La_0.02) (Zr_0.58Sn_0.3025Ti_0.1175)O₃ (PLZST) ceramics by RF magnetron sputtering, and their microstructure, magnetic and electrical transport properties were investigated. Microscopy observations show that LSMO thin films are perovskite structure without obvious impurity phase. All the LSMO thin films display smooth surface with uniform, and roughness is as low as 2.93 nm for LSMO thin films at the thickness of 20 nm. Furthermore, large magnetoresistance (MR) effect was observed in LSMO thin films in a broad temperature range of 10-300 K. Particularly the MR of LSMO thin films with 20 nm in thickness exhibits excellent temperature stability. Moreover, the Curie temperature, metal-insulator transition temperature, saturation magnetization and electrical conductivity decrease as the film thickness increases, which is attributed to the diffusion of Pb, Sn, Zr, etc. in the samples, resulting in the distortion of MnO₆ octahedron.

Key words: La0.7Sr0.3MnO3 thin films, PLZST ceramics, magnetoresistance, diffusion

中图分类号:

TQ174

肖玲, 陈莹, 刘振, 王根水, 温志渝, 董显林. PLZST陶瓷衬底上La_0.7Sr_0.3MnO₃薄膜生长及其磁性能和电输运特性研究[J]. 无机材料学报, 2017, 32(3): 326-330.

XIAO Ling, CHEN Ying, LIU Zhen, WANG Gen-Shui, WEN Zhi-Yu, DONG Xian-Lin. Growth, Magnetic and Electrical Transport Properties of La_0.7Sr_0.3MnO₃ Thin Films on PLZST Ceramics[J]. Journal of Inorganic Materials, 2017, 32(3): 326-330.

图/表 6

Fig. 1 XRD patterns of LSMO thin films with different thicknesses

Fig. 2 AFM surface morphologies of LSMO thin films with different thicknessess(a) 120 nm; (b) 65 nm; (c) 20 nm

Fig. 3 Cross section SEM and energy dispersive spectroscopy line profiles of LSMO thin films(a, b) 20 nm; (c, d) 120 nm

Fig. 4 Temperature dependent resistivity of LSMO films under zero field (a) and temperature-dependent magnetoresistance of LSMO films under 6 T (b)

Fig. 5 Magnetic field dependence of MR ratio of LSMO films with different thicknesses at 250 K

Fig. 6 (a) Temperature dependence of magnetization of LSMO thin films with inset showing temperature dependence of the derivative of magnetization and (b) magnetic hysteresis loops of LSMO thin films with different thicknesses measured at 300 K

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PLZST陶瓷衬底上La_0.7Sr_0.3MnO₃薄膜生长及其磁性能和电输运特性研究

Growth, Magnetic and Electrical Transport Properties of La_0.7Sr_0.3MnO₃ Thin Films on PLZST Ceramics

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