四步法制备高质量硅基砷化镓薄膜

doi:10.15541/jim20160120

摘要/Abstract

摘要：

为了提高在硅基上外延砷化镓薄膜的质量和实验的可重复性, 我们提出了一种叫做四步生长法的新方法, 该方法是通过在低温成核层和高温外延层中间先后插入低温缓冲层和高温缓冲层实现的。通过此方法, 可以制备出表面具有单畴结构、在强白光下依然光亮如镜、粗糙度低且缺陷少的高质量砷化镓薄膜, 而且此方法的重复性很好。即便没有任何生长后的退火处理, 外延出的1 μm厚砷化镓薄膜在5 μm×5 μm扫描区域内的表面粗糙度只有2.1 nm, 且由X射线双晶衍射测试出的砷化镓(004)峰的半高宽只有210.6 arcsec。

关键词: 硅基砷化镓, 四步生长法, 缓冲层, 分子束外延

Abstract:

To improve quality and repeatability of GaAs growth on Si substrate, a new method named as four-step growth was proposed by successively inserting a low temperature (LT) and a high temperature (HT) GaAs buffer layer between the GaAs nucleation layer and the normal GaAs epilayer. The grown layers through four-step method showed high quality, i.e. single domain structure, mirror-like surface even under strong white light, reduced surface roughness and less surface defects, as well as high repeatability. Even without any post-growth annealing process, a 1 μm thick GaAs epilayer with root mean square (RMS) roughness of only 2.1 nm in 5 μm× 5 μm scanning areas was obtained while the full width at half maximum (FWHM) value of the GaAs (004) peak from double crystal X-ray diffraction ω-scan was just 210.6 arcsec.

Key words: GaAs/Si, four-step growth, buffer layer, MBE (molecular beam epitaxy)

中图分类号:

TB383

刘广政, 徐波, 叶晓玲, 刘峰奇, 王占国. 四步法制备高质量硅基砷化镓薄膜[J]. 无机材料学报, 2016, 31(11): 1263-1268.

LIU Guang-Zheng, XU Bo, YE Xiao-Ling, LIU Feng-Qi, WANG Zhan-Guo. Four-step Method for Growing High-quality GaAs Films on Si Substrate by Molecular Beam Epitaxy[J]. Journal of Inorganic Materials, 2016, 31(11): 1263-1268.

图/表 7

Fig. 1 The growth schemes of GaAs on Si for two-step growth (a) and four-step growth (b)

Fig. 2 SEM micrographs of GaAs epilayers on Si by two-step growth (a) and four-step growth (b)

Fig. 3 Cross-sectional profile of GaAs epilayers on Si for four-step (A) and two-step growth (B)

Fig. 4 Etch pit morphologies of GaAs epilayers on Si by two-step growth (a) and four-step growth (b)

Fig. 5 AFM 3D images of 200 nm GaAs epilayer grown on the nucleation layer at different temperatures^(a) 400℃; (b) 500℃; (c) 400℃ (100 nm) + 500℃ (100 nm); (d) 400℃ (100 nm) + 600℃ (100 nm) over 5 μm × 5 μm scanning areas

Fig. 6 AFM images of 1-μm-thick GaAs epilayers grown on Si with different growth process in a 5 μm×5 μm scanning area^(a) Two-step growth; (b) Three-step growth without high temperature GaAs buffer; (c) Three-step growth without low temperature GaAs buffer; (d) Four-step growth

Fig. 7 GaAs (004) ω-scan measured by DCXRD for 1 μm-thick GaAs epilayers on Si with different process(A) Four-step growth; (B) Three-step growth without HT GaAs buffer; (C) Three-step growth without LT GaAs buffer; (D) Two-step growth

参考文献 19

[1]	BOLKHOVITYANOV Y B, PCHELYAKOV O P.GaAs epitaxy on Si substrates: modern status of research and engineering.Physics-Uspekhi, 2008, 51(5): 437-456.
[2]	UEN W Y, LI Z Y, HUANG Y C, et al.Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers.Journal of Crystal Growth, 2006, 295(2): 103-107.
[3]	GROENERT M E, LEITZ C W, PITERA A J, et al.Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers. Journal of Applied Physics, 2003, 93(1): 362-367.
[4]	LIANG Y Y, YOON S F, NGO C Y, et al.Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1-xGex/Si substrate.Journal of Crystal Growth, 2011, 323(1): 426-430.
[5]	EISENBEISER K, EMRICK R, DROOPAD R, et al.GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer. IEEE Electron Device Letters, 2002, 23(6): 300-302.
[6]	LI J Z, BAI J, CARROLL M, et al.Defect reduction of GaAs/Si epitaxy by aspect ratio trapping.Journal of Applied Physics, 2008, 103(10): 1-3.
[7]	LI S Y, ZHOU X L, KONG X T, et al.Selective area growth of GaAs in V-Grooved trenches on Si (001) substrate by aspect-ratio trapping.Chin. Phys. Lett., 2015, 32(2): 1-4.
[8]	WANG T, LIU H Y, LEE A, et al.1.3-μm InAs/GaAs quantum-dots lasers monolithically grown on Si substrates.Optics Express, 2011, 19(12): 11381-11386.
[9]	GEORGAKILAS A, PANAYOTATOS P, STOEMENOS J, et al.Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy.J. App. Phys., 1992, 71(6): 2679-2701.
[10]	KNUUTTILA L, LANKINEN A, LIKONEN H, et al.Low temperature growth GaAs on Ge.Japanese Journal of Appied Physics, 2005, 44(11): 7777-7784.
[11]	KOCH S M, JR J S H. Nucleation and initial growth of GaAs on Si substrate.Appl. Phys. Lett., 1986, 49(26): 1764-1766.
[12]	GOPALAKRISHNAN N, BASKAR K, KAWANAMI H, et al.Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE.Journal of Crystal Growth, 2003, 250(1): 29-33.
[13]	XIONG D P, LUO L, LEI L, et al.Crystalline quality improve ment of GaAs/Si(100) heterostructures by 4° misoriented substrates.Journal of Functional Materials and Devices, 2010, 16(3): 201-205.
[14]	AYERS J E, SCHOWALTER L J, GHANDHI S K.Post-growth thermal annealing of GaAs on Si (001) grown by organometallic vapor phase epitaxy.Journal of Crystal Growth, 1992, 125(1/2): 329-335.
[15]	WANG Y F, JIA Z G, LI X Y, et al.Three-step growth of metamorphic GaAs on Si (001) by low-pressure metal organic chemical vapor deposition.J. Vac. Sci. Technol. B, 2013, 31(5): 1-5.
[16]	LCHIKAWA M, DOI T.Observation of Si (111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffraction.Applied Physics Letters, 1987, 50(17): 1141-1143.
[17]	KOCH S M, ROSNER S J, HULL R, et al.The growth of GaAs on Si by MBE.Journal of Crystal Growth, 1987, 81(1): 205-213.
[18]	SHIMIZU Y, OKADA Y.Growth of high- quality GaAs/Si films for use in solar cell applications.Journal of Crystal Growth, 2004, 265(1/2): 99-100.
[19]	AYERS J E.The measurement of the threading dislocation densities in semiconductor crystals by X-ray diffraction.Journal of Crystal Growth, 1994, 135(1/2): 71-77.