混晶β-(Al, Ga)2O3的禁带调节

doi:10.15541/jim20160135

无机材料学报 ›› 2016, Vol. 31 ›› Issue (11): 1258-1262.DOI: 10.15541/jim20160135

混晶β-(Al, Ga)₂O₃的禁带调节

肖海林^1,2, 邵刚勤³, 赛青林¹, 夏长泰¹, 周圣明¹, 易学专¹

(1. 中国科学院, 上海光学机械精密研究所, 强激光材料重点实验室, 上海201800; 2. 中国科学院大学, 北京100049; 3. 武汉理工大学, 材料复合新技术国家重点实验室, 武汉430070)

收稿日期:2016-03-09 出版日期:2016-11-10 网络出版日期:2016-10-25
作者简介:肖海林. E-mail: hlxiao2014@163.com

Wide Bandgap Engineering of β-(Al, Ga)₂O₃ Mixed Crystals

XIAO Hai-Lin^{1, 2}, SHAO Gang-Qin³, SAI Qing-Lin¹, XIA Chang-Tai¹, ZHOU Sheng-Ming¹, YI Xue-Zhuan¹

(1. Key laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China; 3. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

Received:2016-03-09 Published:2016-11-10 Online:2016-10-25
About author:XIAO Hai-Lin(1989–), male, candidate of master degree. E-mail: hlxiao2014@163.com
Supported by:
Science and Technology Commission of Shanghai Municipality (13111103700)

摘要/Abstract

摘要：

通过光学浮区法生长了不同浓度的β-(Al, Ga)₂O₃混晶。当Al³⁺掺杂浓度达到0.26的时候, 晶体生长出现开裂现象。进行X射线衍射分析, 结果表明所得β-(Al, Ga)₂O₃混晶保持了β-Ga₂O₃的晶体结构, 晶体没有出现其他杂质相, 并且随着Al³⁺浓度的增加, 晶格常数a、b、c减小, β角增大; 核磁共振光谱显示Al的确进入了Ga的格位并且取代了Ga的四配位和六配位格位, 两者的比例约为1: 3。通过测试β-(Al, Ga)₂O₃混晶的透过光谱, 得出β-(Al, Ga)₂O₃混晶的禁带调节范围为4.72~5.32 eV, 扩大了β-Ga₂O₃晶体在更短波段的光电子探测器方面的应用。

关键词: β-Ga2O3, Al3+, 禁带宽度, 半导体

Abstract:

Bandgap tunable β-(Al, Ga)₂O₃ mixed crystals with different Al³⁺concentration were grown by the optical floating zone (OFZ) method. When the nominal Al³⁺ doping concentration was close to 0.26, cracking appeared. The powder X-ray diffraction (XRD) revealed that β-(Al, Ga)₂O₃ mixed crystals kept the crystal structure of β-Ga₂O₃ without foreign phases and the lattice parameters decreased with the increasing Al³⁺ concentration. ²⁷Al magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy showed that Al³⁺ occupied Ga³⁺ positions and the ratio of Al³⁺(IV)/ Al³⁺(VI) was about 1:3.The transmittance spectra were measured to investigate the bandgap of β-(Al, Ga)₂O₃ mixed crystals. Results showed that the bandgap increased continuously with the Al³⁺ concentration increasing from 4.72 eV to 5.32 eV, which may extend the application of β-Ga₂O₃ crystal in optoelectronic devices operating at shorter wavelength.

Key words: β-Ga2O3, Al3+, bandgap, semiconductors

中图分类号:

TN304

肖海林, 邵刚勤, 赛青林, 夏长泰, 周圣明, 易学专. 混晶β-(Al, Ga)₂O₃的禁带调节[J]. 无机材料学报, 2016, 31(11): 1258-1262.

XIAO Hai-Lin, SHAO Gang-Qin, SAI Qing-Lin, XIA Chang-Tai, ZHOU Sheng-Ming, YI Xue-Zhuan. Wide Bandgap Engineering of β-(Al, Ga)₂O₃ Mixed Crystals[J]. Journal of Inorganic Materials, 2016, 31(11): 1258-1262.

图/表 7

Fig. 1 Pictures of β-(Al, Ga)2O3 mixed crystal ingots doped with different Pictures of Al3+ concentrations(a) 0.09; (b) 0.17; (c) 0.23

Fig. 2 Al3+ concentration in mixed crystal x vs Al3+ concentration in mixed powder xp

Fig. 3 (a) Powder XRD patterns of β-(AlxGa1-x)2O3 (x = 0, 0.12, 0.31) mixed crystals and (b) The final observed, calculated and difference profiles for Rietveld refinement of the β-(Al0.12Ga0.88)2O3 structure

Table 1 Refined lattice parameters for β-(AlxGa1-x)2O3 (x = 0, 0.12, 0.31)

	a/nm	b/nm	c/nm	β /(˚)	V/nm³
β-Ga₂O₃	1.22289(3)	0.303736(16)	0.580719(19)	103.842(3)	0.209436(11)
β-(Al_0.12Ga_0.88)₂O₃	1.21859(2)	0.302667(18)	0.579099(18)	103.917(3)	0.207316(13)
β-(Al_0.31Ga_0.69)₂O₃	1.21173(4)	0.30040(3)	0.57660(3)	104.003(4)	0.203646(18)

Fig. 4 27Al MAS NMR spectra of series β-(AlxGa1-x)2O3 (x= 0.12, 0.22, 0.31) samples

Fig. 5 Transmittance of β-(Al, Ga)2O3 mixed crystals with different Al3+concentration in mixed crystals x. The insert is (αhυ)2 vs hυ plot of β-(Al, Ga)2O3 mixed crystals with different Al3+ concentration in mixed crystals x

Fig. 6 Bandgap of β-(Al, Ga)2O3 mixed crystal vs Al3+ concentration in mixed crystals x

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混晶β-(Al, Ga)₂O₃的禁带调节

Wide Bandgap Engineering of β-(Al, Ga)₂O₃ Mixed Crystals

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