Ba(Zr0.15Ti0.85)O3厚膜的介电与铁电性能研究

doi:10.15541/jim20150023

无机材料学报 ›› 2016, Vol. 31 ›› Issue (11): 1219-1222.DOI: 10.15541/jim20150023

Ba(Zr_0.15Ti_0.85)O₃厚膜的介电与铁电性能研究

张营堂^1,2, 闫欠²

(1.河南工学院电气工程系, 新乡453003; 2.陕西理工大学材料学院, 汉中723001)

收稿日期:2016-01-07 修回日期:2016-06-21 出版日期:2016-11-10 网络出版日期:2016-10-25
基金资助:
中国博士后基金(2015M572541);电力设备电气绝缘国家重点实验室开放课题(EIPE11207);工程电介质及其应用教育部重点实验室项目(DE2011A01)

Dieletric and Ferroelctric Properties of Ba(Zr_0.15Ti_0.85)O₃ Thick Film

ZHANG Ying –Tang^1,2, YAN Qian²

(1. Department of Electrical Engineering, Henan Institute of Technology, Xinxiang453003 China; 2. School of Material Science & Engineering, Shaanxi University of Technology, Hanzhong 723003, China)

Received:2016-01-07 Revised:2016-06-21 Published:2016-11-10 Online:2016-10-25
Supported by:
China Postdoctoral Science Foundation (2015M572541), State Key Laboratory of Electrical Insulation and Power Equipment (EIPE11207), State Key Laboratory Breeding Base of Dielectrics Engineering (DE2011A01)

摘要/Abstract

摘要：

本研究采用流延法制备Ba(Zr_0.15Ti_0.85)O₃(BZT)厚膜样品。采用扫描电子显微镜分析样品形貌; 采用LCR测试仪和Sawyer-Tower电路法测量样品的介电与铁电性能。结果表明, BZT厚膜具有明显的介电弛豫特征, 击穿电场强度可达60 kV/cm以上, 饱和极化强度可达58.1 μC/ cm², 剩余极化强度(Pr)为20.9 μC/ cm²。

关键词: BZT, 厚膜, 介电弛豫

Abstract:

Ba(Zr_0.15Ti_0.85)O₃(BZT) thick film was prepared by a tape-casting technique and its morphology was characterized by scanning electron microscope (SEM). Its dielectric and ferroelectric properies were investigated using LCR meter and Sawyer-Tower circuit. The results indicate that there is obvious dielectric relaxation behavior in BZT thick film. Its breakdown field strength, saturated polarization and remnant polarization are 60 kV/cm, 58.1 μC/ cm² and 20.9 μC/cm², respectively.

Key words: BZT, thick film, dielectric relaxation behavior

中图分类号:

TB34

张营堂, 闫欠. Ba(Zr_0.15Ti_0.85)O₃厚膜的介电与铁电性能研究[J]. 无机材料学报, 2016, 31(11): 1219-1222.

ZHANG Ying –Tang, YAN Qian. Dieletric and Ferroelctric Properties of Ba(Zr_0.15Ti_0.85)O₃ Thick Film[J]. Journal of Inorganic Materials, 2016, 31(11): 1219-1222.

图/表 5

图1 样品烧结的工艺流程图

Fig. 1 Sintering process of the sample preparation

图2 BZT厚膜的SEM照片

Fig. 2 SEM images of BZT sintered at (a) 1280℃ and (b) 1340℃

图3 BZT的介电性能-温度曲线

Fig. 3 The temperature dependance of dielectric properties of BZT(a) Thick film sample; (b) Bulk sample. The insets in (a) and (b) are the dielectric loss curve

图4 BZT厚膜在不同电场下的P-E回线

Fig.4 The polarization-electric curves of the BZT thick film under different electrics.

图5 BZT厚膜在不同温度下的P-E回线

Fig.5 Polarization-electric curves of the BZT thick film under different temperature.

参考文献 19

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Ba(Zr_0.15Ti_0.85)O₃厚膜的介电与铁电性能研究

Dieletric and Ferroelctric Properties of Ba(Zr_0.15Ti_0.85)O₃ Thick Film

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