共沉淀法制备Ce掺杂的Gd3(Al, Ga)5O12粉体

doi:10.15541/jim20160075

摘要/Abstract

摘要：

通过在含有钆、镓、铝离子的硝酸混合溶液中滴加氨水, 共沉淀生成Ce掺杂的Gd₃(Al,Ga)₅O₁₂(GAGG)前驱体, 并采用TG/DTA对GAGG前驱体进行表征。分别在800℃、850℃、900℃、1000℃、1100℃及1200℃对GAGG前驱体进行煅烧处理, 采用XRD对GAGG粉体的物相进行表征, 结果显示制备出纯相的GAGG粉体。采用SEM对GAGG粉体的颗粒大小以及微观形貌进行观察。GAGG粉体的荧光谱图显示在560 nm处有一个很强的发射峰。在900℃煅烧处理的GAGG粉体所烧结的陶瓷具有最高的透明度。

关键词: Gd₃(Al,Ga)₅O₁₂陶瓷, 共沉淀, 煅烧, 无机闪烁体

Abstract:

Ce-doped Gd₃(Al,Ga)₅O₁₂ (GAGG) precursors were co-precipitated from a mixed solution of gadolinium, aluminum and gallium nitrates using ammonium hydroxide as precipitant. and then characterized by TG/DTA analysis. GAGG powders were obtained by calcining the precursors at 800℃, 850℃, 900℃, 1000℃, 1100℃ and 1200℃. Phase evolution of GAGG powders were investigated by XRD analysis which showed that a pure GAGG phase was obtained. SEM observation demonstrated that the obtaimed poovders were mainly amorphous with size mainly about 100-150 nm in diameter. PL spectra of GAGG powders showed strong emission around 560 nm. The highest transparency of as prepared ceramic was obtained when GAGG powders were calcined at 900℃.

Key words: Gd₃(Al,Ga)₅O₁₂ ceramic, co-precipitation, calcination, inorganic scintillator

中图分类号:

TQ174

张烨, 陈先强, 秦海明, 罗朝华, 蒋俊, 江浩川. 共沉淀法制备Ce掺杂的Gd₃(Al, Ga)₅O₁₂粉体[J]. 无机材料学报, 2016, 31(10): 1151-1156.

ZHANG Ye, CHEN Xian-Qiang, QIN Hai-Ming, LUO Zhao-Hua, JIANG Jun, JIANG Hao-Chuan. Fabrication of Ce-doped Gd₃(Al, Ga)₅O₁₂ Powders Using Co-precipitation Method[J]. Journal of Inorganic Materials, 2016, 31(10): 1151-1156.

图/表 7

Fig. 1 TG/DTA curve of GAGG:Ce precursors

Fig. 2 XRD patterns of GAGG:Ce powders calcined at different temperatures (a) 800℃; (b) 850℃; (c) 900℃; (d) 1000℃; (e) 1100℃; (f) 1200℃

Fig. 3 IR spectra of GAGG:Ce precursors and powders calcined at different temperatures (a) Precursors; (b) 800℃; (c) 850℃; (d) 900℃; (e) 1000℃; (f) 1100℃; (g) 1200℃

Fig. 4 SEM morphologies of GAGG:Ce precursors and powders calcined at different temperatures (a) Precursors; (b) 800℃; (c) 850℃; (d) 900℃; (e) 1000℃; (f) 1100℃; (g) 1200℃

Fig. 5 PLE spectra of GAGG:Ce powders calcined at different temperatures (a) 850℃; (b) 900℃; (c) 1000℃; (d) 1100℃; (e) 1200℃

Fig. 6 PL spectra of the GAGG:Ce powders calcined at different temperatures (a) 850℃; (b) 900℃; (c) 1000℃; (d) 1100℃; (e) 1200℃; (f), (g) Simulated curve

Fig. 7 Photograph of GAGG:Ce ceramics made from powders calcined at different temperatures and sintered at 1650℃ for 2 h in oxygen atmosphere (a) 850℃; (b) 900℃; (c) 1000℃; (d) 1100℃; (e) 1200℃

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共沉淀法制备Ce掺杂的Gd₃(Al, Ga)₅O₁₂粉体

Fabrication of Ce-doped Gd₃(Al, Ga)₅O₁₂ Powders Using Co-precipitation Method

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